Towards a fast determination of the hydrogen concentration in thin passivating a-Si:H layers using GD-OES

Kurzanzeige
dc.contributor.authorSteffens, Jonathan
dc.contributor.authorHahn, Giso
dc.contributor.authorTerheiden, Barbara
dc.date.accessioned2018-10-25T12:58:16Z
dc.date.available2018-10-25T12:58:16Z
dc.date.issued2018eng
dc.description.abstractIn this contribution, the measurement of the hydrogen concentration in thin passivating amorphous silicon (a-Si:H) layers using Glow Discharge Optical Emission Spectroscopy (GD-OES) is suggested. Usually GD-OES hydrogen measurements suffer from additional signals from atmospheric contaminations, especially from H2O desorbed on the surfaces of such thin layers. This issue is addressed by the deposition of a hydrogen-free copper buffer layer on top, which provides a delay between sputtering the sample surface and the a-Si:H layer itself. Thus the signals from the atmospheric contaminations and from the a-Si:H layer itself are separated. The contamination-free hydrogen signals of the thin a-Si:H layers are eventually calibrated to average hydrogen concentrations.eng
dc.description.versionpublishedeng
dc.identifier.doi10.1063/1.5049260eng
dc.identifier.ppn512312818
dc.identifier.urihttps://kops.uni-konstanz.de/handle/123456789/43619
dc.language.isoengeng
dc.rightsterms-of-use
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dc.subject.ddc530eng
dc.titleTowards a fast determination of the hydrogen concentration in thin passivating a-Si:H layers using GD-OESeng
dc.typeINPROCEEDINGSeng
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kops.citation.bibtex
@inproceedings{Steffens2018Towar-43619,
  year={2018},
  doi={10.1063/1.5049260},
  title={Towards a fast determination of the hydrogen concentration in thin passivating a-Si:H layers using GD-OES},
  number={1999,1},
  isbn={978-0-7354-1715-1},
  issn={0094-243X},
  publisher={AIP Publishing},
  address={Melville, NY},
  series={AIP Conference Proceedings},
  booktitle={SiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaics},
  editor={Ballif, Christophe},
  author={Steffens, Jonathan and Hahn, Giso and Terheiden, Barbara},
  note={Article Number: 020021}
}
kops.citation.iso690STEFFENS, Jonathan, Giso HAHN, Barbara TERHEIDEN, 2018. Towards a fast determination of the hydrogen concentration in thin passivating a-Si:H layers using GD-OES. SiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaics. Lausanne, 19. März 2018 - 21. März 2018. In: BALLIF, Christophe, ed. and others. SiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaics. Melville, NY: AIP Publishing, 2018, 020021. AIP Conference Proceedings. 1999,1. ISSN 0094-243X. eISSN 1551-7616. ISBN 978-0-7354-1715-1. Available under: doi: 10.1063/1.5049260deu
kops.citation.iso690STEFFENS, Jonathan, Giso HAHN, Barbara TERHEIDEN, 2018. Towards a fast determination of the hydrogen concentration in thin passivating a-Si:H layers using GD-OES. SiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaics. Lausanne, Mar 19, 2018 - Mar 21, 2018. In: BALLIF, Christophe, ed. and others. SiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaics. Melville, NY: AIP Publishing, 2018, 020021. AIP Conference Proceedings. 1999,1. ISSN 0094-243X. eISSN 1551-7616. ISBN 978-0-7354-1715-1. Available under: doi: 10.1063/1.5049260eng
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kops.sourcefield.plainBALLIF, Christophe, ed. and others. SiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaics. Melville, NY: AIP Publishing, 2018, 020021. AIP Conference Proceedings. 1999,1. ISSN 0094-243X. eISSN 1551-7616. ISBN 978-0-7354-1715-1. Available under: doi: 10.1063/1.5049260eng
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source.titleSiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaicseng

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