Publikation: Towards a fast determination of the hydrogen concentration in thin passivating a-Si:H layers using GD-OES
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2018
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BALLIF, Christophe, ed. and others. SiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaics. Melville, NY: AIP Publishing, 2018, 020021. AIP Conference Proceedings. 1999,1. ISSN 0094-243X. eISSN 1551-7616. ISBN 978-0-7354-1715-1. Available under: doi: 10.1063/1.5049260
Zusammenfassung
In this contribution, the measurement of the hydrogen concentration in thin passivating amorphous silicon (a-Si:H) layers using Glow Discharge Optical Emission Spectroscopy (GD-OES) is suggested. Usually GD-OES hydrogen measurements suffer from additional signals from atmospheric contaminations, especially from H2O desorbed on the surfaces of such thin layers. This issue is addressed by the deposition of a hydrogen-free copper buffer layer on top, which provides a delay between sputtering the sample surface and the a-Si:H layer itself. Thus the signals from the atmospheric contaminations and from the a-Si:H layer itself are separated. The contamination-free hydrogen signals of the thin a-Si:H layers are eventually calibrated to average hydrogen concentrations.
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530 Physik
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SiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaics, 19. März 2018 - 21. März 2018, Lausanne
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STEFFENS, Jonathan, Giso HAHN, Barbara TERHEIDEN, 2018. Towards a fast determination of the hydrogen concentration in thin passivating a-Si:H layers using GD-OES. SiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaics. Lausanne, 19. März 2018 - 21. März 2018. In: BALLIF, Christophe, ed. and others. SiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaics. Melville, NY: AIP Publishing, 2018, 020021. AIP Conference Proceedings. 1999,1. ISSN 0094-243X. eISSN 1551-7616. ISBN 978-0-7354-1715-1. Available under: doi: 10.1063/1.5049260BibTex
@inproceedings{Steffens2018Towar-43619,
year={2018},
doi={10.1063/1.5049260},
title={Towards a fast determination of the hydrogen concentration in thin passivating a-Si:H layers using GD-OES},
number={1999,1},
isbn={978-0-7354-1715-1},
issn={0094-243X},
publisher={AIP Publishing},
address={Melville, NY},
series={AIP Conference Proceedings},
booktitle={SiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaics},
editor={Ballif, Christophe},
author={Steffens, Jonathan and Hahn, Giso and Terheiden, Barbara},
note={Article Number: 020021}
}RDF
<rdf:RDF
xmlns:dcterms="http://purl.org/dc/terms/"
xmlns:dc="http://purl.org/dc/elements/1.1/"
xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
xmlns:bibo="http://purl.org/ontology/bibo/"
xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
xmlns:foaf="http://xmlns.com/foaf/0.1/"
xmlns:void="http://rdfs.org/ns/void#"
xmlns:xsd="http://www.w3.org/2001/XMLSchema#" >
<rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/43619">
<dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/43619/3/Steffens_2-yrm5yzr8bb97.pdf"/>
<bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/43619"/>
<void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
<dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/43619/3/Steffens_2-yrm5yzr8bb97.pdf"/>
<dcterms:issued>2018</dcterms:issued>
<dcterms:title>Towards a fast determination of the hydrogen concentration in thin passivating a-Si:H layers using GD-OES</dcterms:title>
<dc:creator>Steffens, Jonathan</dc:creator>
<dc:contributor>Terheiden, Barbara</dc:contributor>
<dc:creator>Hahn, Giso</dc:creator>
<foaf:homepage rdf:resource="http://localhost:8080/"/>
<dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2018-10-25T12:58:16Z</dcterms:available>
<dcterms:abstract xml:lang="eng">In this contribution, the measurement of the hydrogen concentration in thin passivating amorphous silicon (a-Si:H) layers using Glow Discharge Optical Emission Spectroscopy (GD-OES) is suggested. Usually GD-OES hydrogen measurements suffer from additional signals from atmospheric contaminations, especially from H<sub>2</sub>O desorbed on the surfaces of such thin layers. This issue is addressed by the deposition of a hydrogen-free copper buffer layer on top, which provides a delay between sputtering the sample surface and the a-Si:H layer itself. Thus the signals from the atmospheric contaminations and from the a-Si:H layer itself are separated. The contamination-free hydrogen signals of the thin a-Si:H layers are eventually calibrated to average hydrogen concentrations.</dcterms:abstract>
<dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
<dc:rights>terms-of-use</dc:rights>
<dc:contributor>Steffens, Jonathan</dc:contributor>
<dc:contributor>Hahn, Giso</dc:contributor>
<dcterms:rights rdf:resource="https://rightsstatements.org/page/InC/1.0/"/>
<dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
<dc:creator>Terheiden, Barbara</dc:creator>
<dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2018-10-25T12:58:16Z</dc:date>
<dc:language>eng</dc:language>
</rdf:Description>
</rdf:RDF>Interner Vermerk
xmlui.Submission.submit.DescribeStep.inputForms.label.kops_note_fromSubmitter
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