Bright green electroluminescence from Tb 3+ in silicon metal-oxide-semiconductor devices

Kurzanzeige
dc.contributor.authorSun, Jiamingdeu
dc.contributor.authorSkorupa, Wolfgangdeu
dc.contributor.authorDekorsy, Thomas
dc.contributor.authorHelm, Manfreddeu
dc.contributor.authorRebohle, Larsdeu
dc.contributor.authorGebel, Thoralfdeu
dc.date.accessioned2011-03-24T14:52:23Zdeu
dc.date.available2011-03-24T14:52:23Zdeu
dc.date.issued2005deu
dc.description.abstractBright green electroluminescence with luminance up to 2800 cd/m² is reported from indium-tin-oxide/SiO2:Tb/Si metal-oxide-semiconductor devices. The SiO2:Tb3+ gate oxide was prepared by thermal oxidation followed by Tb+ implantation. Electroluminescence and photoluminescence properties were studied with variations of the Tb3+ ion concentration and the annealing temperature. The optimized device shows a high external quantum efficiency of 16% and a luminous efficiency of 2.1 lm/W. The excitation processes of the strong green electroluminescence are attributed to the impact excitation of the Tb3+ luminescent centers by hot electrons and the subsequent crossrelaxation from 5D3 to 5D4 energy levels. Light-emitting devices with micrometer size fabricated by the standard metal-oxide-semiconductor technology are demonstrated.eng
dc.description.versionpublished
dc.format.mimetypeapplication/pdfdeu
dc.identifier.citationFirst publ. in: Journal of Applied Physics 97 (2005), 123513deu
dc.identifier.doi10.1063/1.1935766
dc.identifier.ppn275450430deu
dc.identifier.urihttp://kops.uni-konstanz.de/handle/123456789/4997
dc.language.isoengdeu
dc.legacy.dateIssued2007deu
dc.rightsAttribution-NonCommercial-NoDerivs 2.0 Generic
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/
dc.subject.ddc530deu
dc.titleBright green electroluminescence from Tb 3+ in silicon metal-oxide-semiconductor deviceseng
dc.typeJOURNAL_ARTICLEdeu
dspace.entity.typePublication
kops.citation.bibtex
@article{Sun2005Brigh-4997,
  year={2005},
  doi={10.1063/1.1935766},
  title={Bright green electroluminescence from Tb 3+ in silicon metal-oxide-semiconductor devices},
  volume={97},
  journal={Journal of Applied Physics},
  author={Sun, Jiaming and Skorupa, Wolfgang and Dekorsy, Thomas and Helm, Manfred and Rebohle, Lars and Gebel, Thoralf},
  note={Article Number: 123513}
}
kops.citation.iso690SUN, Jiaming, Wolfgang SKORUPA, Thomas DEKORSY, Manfred HELM, Lars REBOHLE, Thoralf GEBEL, 2005. Bright green electroluminescence from Tb 3+ in silicon metal-oxide-semiconductor devices. In: Journal of Applied Physics. 2005, 97, 123513. Available under: doi: 10.1063/1.1935766deu
kops.citation.iso690SUN, Jiaming, Wolfgang SKORUPA, Thomas DEKORSY, Manfred HELM, Lars REBOHLE, Thoralf GEBEL, 2005. Bright green electroluminescence from Tb 3+ in silicon metal-oxide-semiconductor devices. In: Journal of Applied Physics. 2005, 97, 123513. Available under: doi: 10.1063/1.1935766eng
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