@article{Sun2005Brigh-4997,
  year={2005},
  doi={10.1063/1.1935766},
  title={Bright green electroluminescence from Tb 3+ in silicon metal-oxide-semiconductor devices},
  volume={97},
  journal={Journal of Applied Physics},
  author={Sun, Jiaming and Skorupa, Wolfgang and Dekorsy, Thomas and Helm, Manfred and Rebohle, Lars and Gebel, Thoralf},
  note={Article Number: 123513}
}

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    <dc:contributor>Sun, Jiaming</dc:contributor>
    <dc:creator>Rebohle, Lars</dc:creator>
    <dc:contributor>Helm, Manfred</dc:contributor>
    <dc:contributor>Dekorsy, Thomas</dc:contributor>
    <dc:contributor>Gebel, Thoralf</dc:contributor>
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    <dcterms:abstract xml:lang="eng">Bright green electroluminescence with luminance up to 2800 cd/m² is reported from indium-tin-oxide/SiO2:Tb/Si metal-oxide-semiconductor devices. The SiO2:Tb3+ gate oxide was prepared by thermal oxidation followed by Tb+ implantation. Electroluminescence and photoluminescence properties were studied with variations of the Tb3+ ion concentration and the annealing temperature. The optimized device shows a high external quantum efficiency of 16% and a luminous efficiency of 2.1  lm/W. The excitation processes of the strong green electroluminescence are attributed to the impact excitation of the Tb3+ luminescent centers by hot electrons and the subsequent crossrelaxation from 5D3 to 5D4 energy levels. Light-emitting devices with micrometer size fabricated by the standard metal-oxide-semiconductor technology are demonstrated.</dcterms:abstract>
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    <dcterms:bibliographicCitation>First publ. in: Journal of Applied Physics 97 (2005), 123513</dcterms:bibliographicCitation>
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