Bright green electroluminescence from Tb 3+ in silicon metal-oxide-semiconductor devices
Bright green electroluminescence from Tb 3+ in silicon metal-oxide-semiconductor devices
Loading...
Date
2005
Authors
Editors
Journal ISSN
Electronic ISSN
ISBN
Bibliographical data
Publisher
Series
URI (citable link)
DOI (citable link)
International patent number
Link to the license
EU project number
Project
Open Access publication
Collections
Title in another language
Publication type
Journal article
Publication status
Published in
Journal of Applied Physics ; 97 (2005). - 123513
Abstract
Bright green electroluminescence with luminance up to 2800 cd/m² is reported from indium-tin-oxide/SiO2:Tb/Si metal-oxide-semiconductor devices. The SiO2:Tb3+ gate oxide was prepared by thermal oxidation followed by Tb+ implantation. Electroluminescence and photoluminescence properties were studied with variations of the Tb3+ ion concentration and the annealing temperature. The optimized device shows a high external quantum efficiency of 16% and a luminous efficiency of 2.1 lm/W. The excitation processes of the strong green electroluminescence are attributed to the impact excitation of the Tb3+ luminescent centers by hot electrons and the subsequent crossrelaxation from 5D3 to 5D4 energy levels. Light-emitting devices with micrometer size fabricated by the standard metal-oxide-semiconductor technology are demonstrated.
Summary in another language
Subject (DDC)
530 Physics
Keywords
Conference
Review
undefined / . - undefined, undefined. - (undefined; undefined)
Cite This
ISO 690
SUN, Jiaming, Wolfgang SKORUPA, Thomas DEKORSY, Manfred HELM, Lars REBOHLE, Thoralf GEBEL, 2005. Bright green electroluminescence from Tb 3+ in silicon metal-oxide-semiconductor devices. In: Journal of Applied Physics. 97, 123513. Available under: doi: 10.1063/1.1935766BibTex
@article{Sun2005Brigh-4997, year={2005}, doi={10.1063/1.1935766}, title={Bright green electroluminescence from Tb 3+ in silicon metal-oxide-semiconductor devices}, volume={97}, journal={Journal of Applied Physics}, author={Sun, Jiaming and Skorupa, Wolfgang and Dekorsy, Thomas and Helm, Manfred and Rebohle, Lars and Gebel, Thoralf}, note={Article Number: 123513} }
RDF
<rdf:RDF xmlns:dcterms="http://purl.org/dc/terms/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#" xmlns:foaf="http://xmlns.com/foaf/0.1/" xmlns:void="http://rdfs.org/ns/void#" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/4997"> <dc:contributor>Sun, Jiaming</dc:contributor> <dc:creator>Rebohle, Lars</dc:creator> <dc:contributor>Helm, Manfred</dc:contributor> <dc:contributor>Dekorsy, Thomas</dc:contributor> <dc:contributor>Gebel, Thoralf</dc:contributor> <dcterms:issued>2005</dcterms:issued> <dc:contributor>Skorupa, Wolfgang</dc:contributor> <dc:creator>Dekorsy, Thomas</dc:creator> <dcterms:abstract xml:lang="eng">Bright green electroluminescence with luminance up to 2800 cd/m² is reported from indium-tin-oxide/SiO2:Tb/Si metal-oxide-semiconductor devices. The SiO2:Tb3+ gate oxide was prepared by thermal oxidation followed by Tb+ implantation. Electroluminescence and photoluminescence properties were studied with variations of the Tb3+ ion concentration and the annealing temperature. The optimized device shows a high external quantum efficiency of 16% and a luminous efficiency of 2.1 lm/W. The excitation processes of the strong green electroluminescence are attributed to the impact excitation of the Tb3+ luminescent centers by hot electrons and the subsequent crossrelaxation from 5D3 to 5D4 energy levels. Light-emitting devices with micrometer size fabricated by the standard metal-oxide-semiconductor technology are demonstrated.</dcterms:abstract> <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> <dc:creator>Gebel, Thoralf</dc:creator> <dc:format>application/pdf</dc:format> <dcterms:rights rdf:resource="http://creativecommons.org/licenses/by-nc-nd/2.0/"/> <foaf:homepage rdf:resource="http://localhost:8080/"/> <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/4997/1/Bright_green_electroluminescence_from_Tb_3_in_silicon_metal_oxide_semiconductor_devices.pdf"/> <dc:creator>Skorupa, Wolfgang</dc:creator> <dcterms:bibliographicCitation>First publ. in: Journal of Applied Physics 97 (2005), 123513</dcterms:bibliographicCitation> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T14:52:23Z</dc:date> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T14:52:23Z</dcterms:available> <dc:rights>Attribution-NonCommercial-NoDerivs 2.0 Generic</dc:rights> <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/> <dc:contributor>Rebohle, Lars</dc:contributor> <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/4997/1/Bright_green_electroluminescence_from_Tb_3_in_silicon_metal_oxide_semiconductor_devices.pdf"/> <dc:creator>Sun, Jiaming</dc:creator> <dcterms:title>Bright green electroluminescence from Tb 3+ in silicon metal-oxide-semiconductor devices</dcterms:title> <dc:language>eng</dc:language> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/4997"/> <dc:creator>Helm, Manfred</dc:creator> </rdf:Description> </rdf:RDF>
Internal note
xmlui.Submission.submit.DescribeStep.inputForms.label.kops_note_fromSubmitter
Examination date of dissertation
Method of financing
Comment on publication
Alliance license
Corresponding Authors der Uni Konstanz vorhanden
International Co-Authors
Bibliography of Konstanz
Yes