Publikation: Bright green electroluminescence from Tb 3+ in silicon metal-oxide-semiconductor devices
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Bright green electroluminescence with luminance up to 2800 cd/m² is reported from indium-tin-oxide/SiO2:Tb/Si metal-oxide-semiconductor devices. The SiO2:Tb3+ gate oxide was prepared by thermal oxidation followed by Tb+ implantation. Electroluminescence and photoluminescence properties were studied with variations of the Tb3+ ion concentration and the annealing temperature. The optimized device shows a high external quantum efficiency of 16% and a luminous efficiency of 2.1 lm/W. The excitation processes of the strong green electroluminescence are attributed to the impact excitation of the Tb3+ luminescent centers by hot electrons and the subsequent crossrelaxation from 5D3 to 5D4 energy levels. Light-emitting devices with micrometer size fabricated by the standard metal-oxide-semiconductor technology are demonstrated.
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SUN, Jiaming, Wolfgang SKORUPA, Thomas DEKORSY, Manfred HELM, Lars REBOHLE, Thoralf GEBEL, 2005. Bright green electroluminescence from Tb 3+ in silicon metal-oxide-semiconductor devices. In: Journal of Applied Physics. 2005, 97, 123513. Available under: doi: 10.1063/1.1935766BibTex
@article{Sun2005Brigh-4997, year={2005}, doi={10.1063/1.1935766}, title={Bright green electroluminescence from Tb 3+ in silicon metal-oxide-semiconductor devices}, volume={97}, journal={Journal of Applied Physics}, author={Sun, Jiaming and Skorupa, Wolfgang and Dekorsy, Thomas and Helm, Manfred and Rebohle, Lars and Gebel, Thoralf}, note={Article Number: 123513} }
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