Publikation:

Bright green electroluminescence from Tb 3+ in silicon metal-oxide-semiconductor devices

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Bright_green_electroluminescence_from_Tb_3_in_silicon_metal_oxide_semiconductor_devices.pdf
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2005

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Sun, Jiaming
Skorupa, Wolfgang
Helm, Manfred
Rebohle, Lars
Gebel, Thoralf

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http://nbn-resolving.de/urn:nbn:de:bsz:352-opus-45117
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https://doi.org/10.1063/1.1935766
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Attribution-NonCommercial-NoDerivs 2.0 Generic

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Journal of Applied Physics. 2005, 97, 123513. Available under: doi: 10.1063/1.1935766

Zusammenfassung

Bright green electroluminescence with luminance up to 2800 cd/m² is reported from indium-tin-oxide/SiO2:Tb/Si metal-oxide-semiconductor devices. The SiO2:Tb3+ gate oxide was prepared by thermal oxidation followed by Tb+ implantation. Electroluminescence and photoluminescence properties were studied with variations of the Tb3+ ion concentration and the annealing temperature. The optimized device shows a high external quantum efficiency of 16% and a luminous efficiency of 2.1 lm/W. The excitation processes of the strong green electroluminescence are attributed to the impact excitation of the Tb3+ luminescent centers by hot electrons and the subsequent crossrelaxation from 5D3 to 5D4 energy levels. Light-emitting devices with micrometer size fabricated by the standard metal-oxide-semiconductor technology are demonstrated.

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530 Physik

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ISO 690SUN, Jiaming, Wolfgang SKORUPA, Thomas DEKORSY, Manfred HELM, Lars REBOHLE, Thoralf GEBEL, 2005. Bright green electroluminescence from Tb 3+ in silicon metal-oxide-semiconductor devices. In: Journal of Applied Physics. 2005, 97, 123513. Available under: doi: 10.1063/1.1935766
BibTex
@article{Sun2005Brigh-4997,
  year={2005},
  doi={10.1063/1.1935766},
  title={Bright green electroluminescence from Tb 3+ in silicon metal-oxide-semiconductor devices},
  volume={97},
  journal={Journal of Applied Physics},
  author={Sun, Jiaming and Skorupa, Wolfgang and Dekorsy, Thomas and Helm, Manfred and Rebohle, Lars and Gebel, Thoralf},
  note={Article Number: 123513}
}
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