Charge transfer in copper oxide thin films deposited at different electrodeposition potential

Kurzanzeige
dc.contributor.authorAli, Nazakat
dc.contributor.authorHussain, Sajad
dc.contributor.authorWaqas, Muhammad
dc.contributor.authorFaheem, M.
dc.contributor.authorAhmad, Naveed
dc.contributor.authorAli, Adnan
dc.contributor.authorAli, Muhammad Yasir
dc.contributor.authorMahmood, Khalid
dc.contributor.authorSchmidt-Mende, Lukas
dc.date.accessioned2023-05-05T12:52:08Z
dc.date.available2023-05-05T12:52:08Z
dc.date.issued2023
dc.description.abstractThe deposition potential affects the structural, morphological, optical, and electrochemical impedance spectroscopy properties of cuprous oxide (Cu2O) thin films formed on copper (Cu) substrates adopting a three-electrode electrochemical deposition procedure. XRD data revealed that the deposited films have a cubic structure established with desired (111) growth orientation. Scanning electron microscopy (SEM) images reveal that Cu2O film has very well three-sided pyramid-shaped grains which are equally spread over the surface of the Cu substrates and change substantially when the plating potential is changed. The photo-current density of prepared Cu2O thin films was increased from −1.41 × 10−4 to −3.01 × 10−4 A/cm2 with increasing the deposition potential of −0.3 to −0.6 V, respectively. Further, Cu2O thin films obtained at −0.6 V have the minimum charge transfer resistance (Rct) than Cu2O thin films synthesized at −0.3 to −0.5 V, suggesting that Cu2O thin films produced at −0.6 V have the highest electron transfer efficiency.
dc.description.versionpublisheddeu
dc.identifier.doi10.1016/j.physb.2023.414881
dc.identifier.urihttps://kops.uni-konstanz.de/handle/123456789/66800
dc.language.isoeng
dc.subject.ddc530
dc.titleCharge transfer in copper oxide thin films deposited at different electrodeposition potentialeng
dc.typeJOURNAL_ARTICLE
dspace.entity.typePublication
kops.citation.bibtex
@article{Ali2023Charg-66800,
  year={2023},
  doi={10.1016/j.physb.2023.414881},
  title={Charge transfer in copper oxide thin films deposited at different electrodeposition potential},
  volume={659},
  issn={0921-4526},
  journal={Physica B: Condensed Matter},
  author={Ali, Nazakat and Hussain, Sajad and Waqas, Muhammad and Faheem, M. and Ahmad, Naveed and Ali, Adnan and Ali, Muhammad Yasir and Mahmood, Khalid and Schmidt-Mende, Lukas},
  note={Article Number: 414881}
}
kops.citation.iso690ALI, Nazakat, Sajad HUSSAIN, Muhammad WAQAS, M. FAHEEM, Naveed AHMAD, Adnan ALI, Muhammad Yasir ALI, Khalid MAHMOOD, Lukas SCHMIDT-MENDE, 2023. Charge transfer in copper oxide thin films deposited at different electrodeposition potential. In: Physica B: Condensed Matter. Elsevier. 2023, 659, 414881. ISSN 0921-4526. eISSN 1873-2135. Available under: doi: 10.1016/j.physb.2023.414881deu
kops.citation.iso690ALI, Nazakat, Sajad HUSSAIN, Muhammad WAQAS, M. FAHEEM, Naveed AHMAD, Adnan ALI, Muhammad Yasir ALI, Khalid MAHMOOD, Lukas SCHMIDT-MENDE, 2023. Charge transfer in copper oxide thin films deposited at different electrodeposition potential. In: Physica B: Condensed Matter. Elsevier. 2023, 659, 414881. ISSN 0921-4526. eISSN 1873-2135. Available under: doi: 10.1016/j.physb.2023.414881eng
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kops.sourcefieldPhysica B: Condensed Matter. Elsevier. 2023, <b>659</b>, 414881. ISSN 0921-4526. eISSN 1873-2135. Available under: doi: 10.1016/j.physb.2023.414881deu
kops.sourcefield.plainPhysica B: Condensed Matter. Elsevier. 2023, 659, 414881. ISSN 0921-4526. eISSN 1873-2135. Available under: doi: 10.1016/j.physb.2023.414881deu
kops.sourcefield.plainPhysica B: Condensed Matter. Elsevier. 2023, 659, 414881. ISSN 0921-4526. eISSN 1873-2135. Available under: doi: 10.1016/j.physb.2023.414881eng
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source.periodicalTitlePhysica B: Condensed Matter
source.publisherElsevier

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