Charge transfer in copper oxide thin films deposited at different electrodeposition potential

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2023
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The deposition potential affects the structural, morphological, optical, and electrochemical impedance spectroscopy properties of cuprous oxide (Cu2O) thin films formed on copper (Cu) substrates adopting a three-electrode electrochemical deposition procedure. XRD data revealed that the deposited films have a cubic structure established with desired (111) growth orientation. Scanning electron microscopy (SEM) images reveal that Cu2O film has very well three-sided pyramid-shaped grains which are equally spread over the surface of the Cu substrates and change substantially when the plating potential is changed. The photo-current density of prepared Cu2O thin films was increased from −1.41 × 10−4 to −3.01 × 10−4 A/cm2 with increasing the deposition potential of −0.3 to −0.6 V, respectively. Further, Cu2O thin films obtained at −0.6 V have the minimum charge transfer resistance (Rct) than Cu2O thin films synthesized at −0.3 to −0.5 V, suggesting that Cu2O thin films produced at −0.6 V have the highest electron transfer efficiency.

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ISO 690ALI, Nazakat, Sajad HUSSAIN, Muhammad WAQAS, M. FAHEEM, Naveed AHMAD, Adnan ALI, Muhammad Yasir ALI, Khalid MAHMOOD, Lukas SCHMIDT-MENDE, 2023. Charge transfer in copper oxide thin films deposited at different electrodeposition potential. In: Physica B: Condensed Matter. Elsevier. 2023, 659, 414881. ISSN 0921-4526. eISSN 1873-2135. Available under: doi: 10.1016/j.physb.2023.414881
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@article{Ali2023Charg-66800,
  year={2023},
  doi={10.1016/j.physb.2023.414881},
  title={Charge transfer in copper oxide thin films deposited at different electrodeposition potential},
  volume={659},
  issn={0921-4526},
  journal={Physica B: Condensed Matter},
  author={Ali, Nazakat and Hussain, Sajad and Waqas, Muhammad and Faheem, M. and Ahmad, Naveed and Ali, Adnan and Ali, Muhammad Yasir and Mahmood, Khalid and Schmidt-Mende, Lukas},
  note={Article Number: 414881}
}
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