@article{Ali2023Charg-66800,
  year={2023},
  doi={10.1016/j.physb.2023.414881},
  title={Charge transfer in copper oxide thin films deposited at different electrodeposition potential},
  volume={659},
  issn={0921-4526},
  journal={Physica B: Condensed Matter},
  author={Ali, Nazakat and Hussain, Sajad and Waqas, Muhammad and Faheem, M. and Ahmad, Naveed and Ali, Adnan and Ali, Muhammad Yasir and Mahmood, Khalid and Schmidt-Mende, Lukas},
  note={Article Number: 414881}
}

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    <dc:contributor>Ali, Adnan</dc:contributor>
    <dcterms:title>Charge transfer in copper oxide thin films deposited at different electrodeposition potential</dcterms:title>
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    <dcterms:abstract>The deposition potential affects the structural, morphological, optical, and electrochemical impedance spectroscopy properties of cuprous oxide (Cu&lt;sub&gt;2&lt;/sub&gt;O) thin films formed on copper (Cu) substrates adopting a three-electrode electrochemical deposition procedure. XRD data revealed that the deposited films have a cubic structure established with desired (111) growth orientation. Scanning electron microscopy (SEM) images reveal that Cu&lt;sub&gt;2&lt;/sub&gt;O film has very well three-sided pyramid-shaped grains which are equally spread over the surface of the Cu substrates and change substantially when the plating potential is changed. The photo-current density of prepared Cu&lt;sub&gt;2&lt;/sub&gt;O thin films was increased from −1.41 × 10&lt;sup&gt;−4&lt;/sup&gt; to −3.01 × 10&lt;sup&gt;−4&lt;/sup&gt; A/cm&lt;sup&gt;2&lt;/sup&gt; with increasing the deposition potential of −0.3 to −0.6 V, respectively. Further, Cu&lt;sub&gt;2&lt;/sub&gt;O thin films obtained at −0.6 V have the minimum charge transfer resistance (R&lt;sub&gt;ct&lt;/sub&gt;) than Cu&lt;sub&gt;2&lt;/sub&gt;O thin films synthesized at −0.3 to −0.5 V, suggesting that Cu&lt;sub&gt;2&lt;/sub&gt;O thin films produced at −0.6 V have the highest electron transfer efficiency.</dcterms:abstract>
    <dc:creator>Ali, Nazakat</dc:creator>
    <dc:creator>Ali, Adnan</dc:creator>
    <dc:creator>Ali, Muhammad Yasir</dc:creator>
    <dc:contributor>Schmidt-Mende, Lukas</dc:contributor>
    <dc:creator>Mahmood, Khalid</dc:creator>
    <dc:contributor>Mahmood, Khalid</dc:contributor>
    <dc:creator>Faheem, M.</dc:creator>
    <dc:contributor>Ali, Muhammad Yasir</dc:contributor>
    <dc:contributor>Faheem, M.</dc:contributor>
    <dc:language>eng</dc:language>
    <dcterms:issued>2023</dcterms:issued>
    <dc:creator>Ahmad, Naveed</dc:creator>
    <dc:contributor>Ahmad, Naveed</dc:contributor>
    <dc:contributor>Ali, Nazakat</dc:contributor>
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    <dc:creator>Hussain, Sajad</dc:creator>
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    <dc:contributor>Hussain, Sajad</dc:contributor>
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    <dc:creator>Waqas, Muhammad</dc:creator>
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    <dc:contributor>Waqas, Muhammad</dc:contributor>
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