Charge transfer in copper oxide thin films deposited at different electrodeposition potential

Ali, Nazakat; Hussain, Sajad; Waqas, Muhammad; Faheem, M.; Ahmad, Naveed; Ali, Adnan; Ali, Muhammad Yasir; Mahmood, Khalid; Schmidt-Mende, Lukas

Charge transfer in copper oxide thin films deposited at different electrodeposition potential

Dateien

Zu diesem Dokument gibt es keine Dateien.

Datum

2023

Autor:innen

Ali, Nazakat

Hussain, Sajad

Waqas, Muhammad

Faheem, M.

Ahmad, Naveed

Ali, Adnan

Ali, Muhammad Yasir

Mahmood, Khalid

Schmidt-Mende, Lukas

DOI (zitierfähiger Link)

https://doi.org/10.1016/j.physb.2023.414881

Sammlungen

Physik

Publikationstyp

Zeitschriftenartikel

Publikationsstatus

Published

Erschienen in

Physica B: Condensed Matter. Elsevier. 2023, 659, 414881. ISSN 0921-4526. eISSN 1873-2135. Available under: doi: 10.1016/j.physb.2023.414881

Zusammenfassung

The deposition potential affects the structural, morphological, optical, and electrochemical impedance spectroscopy properties of cuprous oxide (Cu₂O) thin films formed on copper (Cu) substrates adopting a three-electrode electrochemical deposition procedure. XRD data revealed that the deposited films have a cubic structure established with desired (111) growth orientation. Scanning electron microscopy (SEM) images reveal that Cu₂O film has very well three-sided pyramid-shaped grains which are equally spread over the surface of the Cu substrates and change substantially when the plating potential is changed. The photo-current density of prepared Cu₂O thin films was increased from −1.41 × 10⁻⁴ to −3.01 × 10⁻⁴ A/cm² with increasing the deposition potential of −0.3 to −0.6 V, respectively. Further, Cu₂O thin films obtained at −0.6 V have the minimum charge transfer resistance (R_ct) than Cu₂O thin films synthesized at −0.3 to −0.5 V, suggesting that Cu₂O thin films produced at −0.6 V have the highest electron transfer efficiency.

Fachgebiet (DDC)

530 Physik

Zitieren

ISO 690

ALI, Nazakat, Sajad HUSSAIN, Muhammad WAQAS, M. FAHEEM, Naveed AHMAD, Adnan ALI, Muhammad Yasir ALI, Khalid MAHMOOD, Lukas SCHMIDT-MENDE, 2023. Charge transfer in copper oxide thin films deposited at different electrodeposition potential. In: Physica B: Condensed Matter. Elsevier. 2023, 659, 414881. ISSN 0921-4526. eISSN 1873-2135. Available under: doi: 10.1016/j.physb.2023.414881

BibTex

@article{Ali2023Charg-66800,
  year={2023},
  doi={10.1016/j.physb.2023.414881},
  title={Charge transfer in copper oxide thin films deposited at different electrodeposition potential},
  volume={659},
  issn={0921-4526},
  journal={Physica B: Condensed Matter},
  author={Ali, Nazakat and Hussain, Sajad and Waqas, Muhammad and Faheem, M. and Ahmad, Naveed and Ali, Adnan and Ali, Muhammad Yasir and Mahmood, Khalid and Schmidt-Mende, Lukas},
  note={Article Number: 414881}
}

RDF

<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/66800">
    <dc:contributor>Ali, Adnan</dc:contributor>
    <dcterms:title>Charge transfer in copper oxide thin films deposited at different electrodeposition potential</dcterms:title>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dcterms:abstract>The deposition potential affects the structural, morphological, optical, and electrochemical impedance spectroscopy properties of cuprous oxide (Cu&lt;sub&gt;2&lt;/sub&gt;O) thin films formed on copper (Cu) substrates adopting a three-electrode electrochemical deposition procedure. XRD data revealed that the deposited films have a cubic structure established with desired (111) growth orientation. Scanning electron microscopy (SEM) images reveal that Cu&lt;sub&gt;2&lt;/sub&gt;O film has very well three-sided pyramid-shaped grains which are equally spread over the surface of the Cu substrates and change substantially when the plating potential is changed. The photo-current density of prepared Cu&lt;sub&gt;2&lt;/sub&gt;O thin films was increased from −1.41 × 10&lt;sup&gt;−4&lt;/sup&gt; to −3.01 × 10&lt;sup&gt;−4&lt;/sup&gt; A/cm&lt;sup&gt;2&lt;/sup&gt; with increasing the deposition potential of −0.3 to −0.6 V, respectively. Further, Cu&lt;sub&gt;2&lt;/sub&gt;O thin films obtained at −0.6 V have the minimum charge transfer resistance (R&lt;sub&gt;ct&lt;/sub&gt;) than Cu&lt;sub&gt;2&lt;/sub&gt;O thin films synthesized at −0.3 to −0.5 V, suggesting that Cu&lt;sub&gt;2&lt;/sub&gt;O thin films produced at −0.6 V have the highest electron transfer efficiency.</dcterms:abstract>
    <dc:creator>Ali, Nazakat</dc:creator>
    <dc:creator>Ali, Adnan</dc:creator>
    <dc:creator>Ali, Muhammad Yasir</dc:creator>
    <dc:contributor>Schmidt-Mende, Lukas</dc:contributor>
    <dc:creator>Mahmood, Khalid</dc:creator>
    <dc:contributor>Mahmood, Khalid</dc:contributor>
    <dc:creator>Faheem, M.</dc:creator>
    <dc:contributor>Ali, Muhammad Yasir</dc:contributor>
    <dc:contributor>Faheem, M.</dc:contributor>
    <dc:language>eng</dc:language>
    <dcterms:issued>2023</dcterms:issued>
    <dc:creator>Ahmad, Naveed</dc:creator>
    <dc:contributor>Ahmad, Naveed</dc:contributor>
    <dc:contributor>Ali, Nazakat</dc:contributor>
    <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/66800"/>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <dc:creator>Hussain, Sajad</dc:creator>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:contributor>Hussain, Sajad</dc:contributor>
    <dc:creator>Schmidt-Mende, Lukas</dc:creator>
    <dc:creator>Waqas, Muhammad</dc:creator>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2023-05-05T12:52:08Z</dcterms:available>
    <dc:contributor>Waqas, Muhammad</dc:contributor>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2023-05-05T12:52:08Z</dc:date>
  </rdf:Description>
</rdf:RDF>

Universitätsbibliographie

Ja

Begutachtet

Unbekannt