Submicron contacts for electrical characterization of semiconducting WS2 thin films

Ballif, Christophe; Regula, Manfred; Lévy, Francis; Burmeister, Frank; Schäfle, Claudia; Matthes, Thomas; Leiderer, Paul; Niedermann, Philippe; Gutmannsbauer, W.; Bucher, Ron

Submicron contacts for electrical characterization of semiconducting WS2 thin films

Dateien

233_jvacscitech_1998.pdfGröße: 297.35 KBDownloads: 315

Datum

1998

Autor:innen

Ballif, Christophe

Regula, Manfred

Lévy, Francis

Burmeister, Frank

Schäfle, Claudia

Matthes, Thomas

Leiderer, Paul

Niedermann, Philippe

Gutmannsbauer, W.

Bucher, Ron

Open Access-Veröffentlichung

Open Access Green

Sammlungen

Physik

Publikationstyp

Zeitschriftenartikel

Publikationsstatus

Published

Erschienen in

Journal of Vacuum Science and Technology / A, Vacuum, Surfaces, and Films. 1998, 16(3), pp. 1239-1243. Available under: doi: 10.1116/1.581266

Zusammenfassung

We report a new method to characterize the local electronic properties of polycrystalline semiconducting thin films. A lattice of triangular gold electrodes, with a typical area of 0.2 mm2, is evaporated on a p-type WS2 film. With the help of a conductive atomic force microscope, the current voltage characteristics of the contacts established between the gold electrodes and the WS2 film are measured. A linear dependence of the current versus voltage is obtained on gold triangles in contact with grain edges. This indicates a high level of doping or degeneracy of the semiconductor at the grain edges. The electrodes deposited on flat WS2 crystallites form rectifying diodes with the underlying grains. Barrier heights of 0.56 0.74 eV and diode ideality factors between 1.15 and 2 are determined. Under illumination, open-circuit voltages up to 500 mV can be measured on some contacts. A short response time of the photocurrent is observed (100 ms), linked to trapping effects
at grain boundaries.

Fachgebiet (DDC)

530 Physik

Zitieren

ISO 690

BALLIF, Christophe, Manfred REGULA, Francis LÉVY, Frank BURMEISTER, Claudia SCHÄFLE, Thomas MATTHES, Paul LEIDERER, Philippe NIEDERMANN, W. GUTMANNSBAUER, Ron BUCHER, 1998. Submicron contacts for electrical characterization of semiconducting WS2 thin films. In: Journal of Vacuum Science and Technology / A, Vacuum, Surfaces, and Films. 1998, 16(3), pp. 1239-1243. Available under: doi: 10.1116/1.581266

BibTex

@article{Ballif1998Submi-9515,
  year={1998},
  doi={10.1116/1.581266},
  title={Submicron contacts for electrical characterization of semiconducting WS2 thin films},
  number={3},
  volume={16},
  journal={Journal of Vacuum Science and Technology / A, Vacuum, Surfaces, and Films},
  pages={1239--1243},
  author={Ballif, Christophe and Regula, Manfred and Lévy, Francis and Burmeister, Frank and Schäfle, Claudia and Matthes, Thomas and Leiderer, Paul and Niedermann, Philippe and Gutmannsbauer, W. and Bucher, Ron}
}

RDF

<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/9515">
    <dc:language>eng</dc:language>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T17:57:37Z</dc:date>
    <dc:contributor>Regula, Manfred</dc:contributor>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <dc:contributor>Matthes, Thomas</dc:contributor>
    <dc:creator>Burmeister, Frank</dc:creator>
    <dc:contributor>Schäfle, Claudia</dc:contributor>
    <dc:creator>Leiderer, Paul</dc:creator>
    <dc:creator>Bucher, Ron</dc:creator>
    <dcterms:issued>1998</dcterms:issued>
    <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/9515/1/233_jvacscitech_1998.pdf"/>
    <dc:contributor>Bucher, Ron</dc:contributor>
    <dc:contributor>Niedermann, Philippe</dc:contributor>
    <dc:creator>Regula, Manfred</dc:creator>
    <dc:creator>Matthes, Thomas</dc:creator>
    <dc:creator>Schäfle, Claudia</dc:creator>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dc:creator>Lévy, Francis</dc:creator>
    <dc:contributor>Leiderer, Paul</dc:contributor>
    <dcterms:abstract xml:lang="eng">We report a new method to characterize the local electronic properties of polycrystalline semiconducting thin films. A lattice of triangular gold electrodes, with a typical area of 0.2 mm2, is evaporated on a p-type WS2 film. With the help of a conductive atomic force microscope, the current voltage characteristics of the contacts established between the gold electrodes and the WS2 film are measured. A linear dependence of the current versus voltage is  obtained on gold triangles in contact with grain edges. This indicates a high level of doping or degeneracy of the semiconductor at the grain edges. The electrodes deposited on flat WS2 crystallites form rectifying diodes with the underlying grains. Barrier heights of 0.56 0.74 eV and diode ideality factors between 1.15 and 2 are determined. Under illumination, open-circuit voltages up to 500 mV can be measured on some contacts. A short response time of the photocurrent is observed (100 ms), linked to trapping effects&lt;br /&gt;at grain boundaries.</dcterms:abstract>
    <dc:creator>Niedermann, Philippe</dc:creator>
    <dc:creator>Gutmannsbauer, W.</dc:creator>
    <dc:contributor>Burmeister, Frank</dc:contributor>
    <dcterms:rights rdf:resource="http://creativecommons.org/licenses/by-nc-nd/2.0/"/>
    <dcterms:bibliographicCitation>First publ. in: Journal of Vacuum Science and Technology / A, Vacuum, Surfaces, and Films, Vol. 16 (1998), 3, pp. 1239-1243</dcterms:bibliographicCitation>
    <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/9515"/>
    <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/9515/1/233_jvacscitech_1998.pdf"/>
    <dc:rights>Attribution-NonCommercial-NoDerivs 2.0 Generic</dc:rights>
    <dc:contributor>Ballif, Christophe</dc:contributor>
    <dc:creator>Ballif, Christophe</dc:creator>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T17:57:37Z</dcterms:available>
    <dc:contributor>Gutmannsbauer, W.</dc:contributor>
    <dc:contributor>Lévy, Francis</dc:contributor>
    <dc:format>application/pdf</dc:format>
    <dcterms:title>Submicron contacts for electrical characterization of semiconducting WS2 thin films</dcterms:title>
  </rdf:Description>
</rdf:RDF>

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