Submicron contacts for electrical characterization of semiconducting WS2 thin films

Lade...
Vorschaubild
Dateien
Zu diesem Dokument gibt es keine Dateien.
Datum
1998
Autor:innen
Ballif, Christophe
Regula, Manfred
Lévy, Francis
Burmeister, Frank
Schäfle, Claudia
Matthes, Thomas
Niedermann, Philippe
Gutmannsbauer, W.
Bucher, Ron
Herausgeber:innen
Kontakt
ISSN der Zeitschrift
Electronic ISSN
ISBN
Bibliografische Daten
Verlag
Schriftenreihe
Auflagebezeichnung
DOI (zitierfähiger Link)
ArXiv-ID
Internationale Patentnummer
Angaben zur Forschungsförderung
Projekt
Open Access-Veröffentlichung
Open Access Green
Sammlungen
Core Facility der Universität Konstanz
Gesperrt bis
Titel in einer weiteren Sprache
Forschungsvorhaben
Organisationseinheiten
Zeitschriftenheft
Publikationstyp
Zeitschriftenartikel
Publikationsstatus
Published
Erschienen in
Journal of Vacuum Science and Technology / A, Vacuum, Surfaces, and Films. 1998, 16(3), pp. 1239-1243. Available under: doi: 10.1116/1.581266
Zusammenfassung

We report a new method to characterize the local electronic properties of polycrystalline semiconducting thin films. A lattice of triangular gold electrodes, with a typical area of 0.2 mm2, is evaporated on a p-type WS2 film. With the help of a conductive atomic force microscope, the current voltage characteristics of the contacts established between the gold electrodes and the WS2 film are measured. A linear dependence of the current versus voltage is obtained on gold triangles in contact with grain edges. This indicates a high level of doping or degeneracy of the semiconductor at the grain edges. The electrodes deposited on flat WS2 crystallites form rectifying diodes with the underlying grains. Barrier heights of 0.56 0.74 eV and diode ideality factors between 1.15 and 2 are determined. Under illumination, open-circuit voltages up to 500 mV can be measured on some contacts. A short response time of the photocurrent is observed (100 ms), linked to trapping effects
at grain boundaries.

Zusammenfassung in einer weiteren Sprache
Fachgebiet (DDC)
530 Physik
Schlagwörter
Konferenz
Rezension
undefined / . - undefined, undefined
Zitieren
ISO 690BALLIF, Christophe, Manfred REGULA, Francis LÉVY, Frank BURMEISTER, Claudia SCHÄFLE, Thomas MATTHES, Paul LEIDERER, Philippe NIEDERMANN, W. GUTMANNSBAUER, Ron BUCHER, 1998. Submicron contacts for electrical characterization of semiconducting WS2 thin films. In: Journal of Vacuum Science and Technology / A, Vacuum, Surfaces, and Films. 1998, 16(3), pp. 1239-1243. Available under: doi: 10.1116/1.581266
BibTex
@article{Ballif1998Submi-9515,
  year={1998},
  doi={10.1116/1.581266},
  title={Submicron contacts for electrical characterization of semiconducting WS2 thin films},
  number={3},
  volume={16},
  journal={Journal of Vacuum Science and Technology / A, Vacuum, Surfaces, and Films},
  pages={1239--1243},
  author={Ballif, Christophe and Regula, Manfred and Lévy, Francis and Burmeister, Frank and Schäfle, Claudia and Matthes, Thomas and Leiderer, Paul and Niedermann, Philippe and Gutmannsbauer, W. and Bucher, Ron}
}
RDF
<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/9515">
    <dc:language>eng</dc:language>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T17:57:37Z</dc:date>
    <dc:contributor>Regula, Manfred</dc:contributor>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <dc:contributor>Matthes, Thomas</dc:contributor>
    <dc:creator>Burmeister, Frank</dc:creator>
    <dc:contributor>Schäfle, Claudia</dc:contributor>
    <dc:creator>Leiderer, Paul</dc:creator>
    <dc:creator>Bucher, Ron</dc:creator>
    <dcterms:issued>1998</dcterms:issued>
    <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/9515/1/233_jvacscitech_1998.pdf"/>
    <dc:contributor>Bucher, Ron</dc:contributor>
    <dc:contributor>Niedermann, Philippe</dc:contributor>
    <dc:creator>Regula, Manfred</dc:creator>
    <dc:creator>Matthes, Thomas</dc:creator>
    <dc:creator>Schäfle, Claudia</dc:creator>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dc:creator>Lévy, Francis</dc:creator>
    <dc:contributor>Leiderer, Paul</dc:contributor>
    <dcterms:abstract xml:lang="eng">We report a new method to characterize the local electronic properties of polycrystalline semiconducting thin films. A lattice of triangular gold electrodes, with a typical area of 0.2 mm2, is evaporated on a p-type WS2 film. With the help of a conductive atomic force microscope, the current voltage characteristics of the contacts established between the gold electrodes and the WS2 film are measured. A linear dependence of the current versus voltage is  obtained on gold triangles in contact with grain edges. This indicates a high level of doping or degeneracy of the semiconductor at the grain edges. The electrodes deposited on flat WS2 crystallites form rectifying diodes with the underlying grains. Barrier heights of 0.56 0.74 eV and diode ideality factors between 1.15 and 2 are determined. Under illumination, open-circuit voltages up to 500 mV can be measured on some contacts. A short response time of the photocurrent is observed (100 ms), linked to trapping effects&lt;br /&gt;at grain boundaries.</dcterms:abstract>
    <dc:creator>Niedermann, Philippe</dc:creator>
    <dc:creator>Gutmannsbauer, W.</dc:creator>
    <dc:contributor>Burmeister, Frank</dc:contributor>
    <dcterms:rights rdf:resource="http://creativecommons.org/licenses/by-nc-nd/2.0/"/>
    <dcterms:bibliographicCitation>First publ. in: Journal of Vacuum Science and Technology / A, Vacuum, Surfaces, and Films, Vol. 16 (1998), 3, pp. 1239-1243</dcterms:bibliographicCitation>
    <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/9515"/>
    <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/9515/1/233_jvacscitech_1998.pdf"/>
    <dc:rights>Attribution-NonCommercial-NoDerivs 2.0 Generic</dc:rights>
    <dc:contributor>Ballif, Christophe</dc:contributor>
    <dc:creator>Ballif, Christophe</dc:creator>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T17:57:37Z</dcterms:available>
    <dc:contributor>Gutmannsbauer, W.</dc:contributor>
    <dc:contributor>Lévy, Francis</dc:contributor>
    <dc:format>application/pdf</dc:format>
    <dcterms:title>Submicron contacts for electrical characterization of semiconducting WS2 thin films</dcterms:title>
  </rdf:Description>
</rdf:RDF>
Interner Vermerk
xmlui.Submission.submit.DescribeStep.inputForms.label.kops_note_fromSubmitter
Kontakt
URL der Originalveröffentl.
Prüfdatum der URL
Prüfungsdatum der Dissertation
Finanzierungsart
Kommentar zur Publikation
Allianzlizenz
Corresponding Authors der Uni Konstanz vorhanden
Internationale Co-Autor:innen
Universitätsbibliographie
Nein
Begutachtet
Diese Publikation teilen