Submicron contacts for electrical characterization of semiconducting WS2 thin films

Kurzanzeige
dc.contributor.authorBallif, Christophedeu
dc.contributor.authorRegula, Manfreddeu
dc.contributor.authorLévy, Francisdeu
dc.contributor.authorBurmeister, Frankdeu
dc.contributor.authorSchäfle, Claudiadeu
dc.contributor.authorMatthes, Thomasdeu
dc.contributor.authorLeiderer, Paul
dc.contributor.authorNiedermann, Philippedeu
dc.contributor.authorGutmannsbauer, W.deu
dc.contributor.authorBucher, Rondeu
dc.date.accessioned2011-03-24T17:57:37Zdeu
dc.date.available2011-03-24T17:57:37Zdeu
dc.date.issued1998deu
dc.description.abstractWe report a new method to characterize the local electronic properties of polycrystalline semiconducting thin films. A lattice of triangular gold electrodes, with a typical area of 0.2 mm2, is evaporated on a p-type WS2 film. With the help of a conductive atomic force microscope, the current voltage characteristics of the contacts established between the gold electrodes and the WS2 film are measured. A linear dependence of the current versus voltage is obtained on gold triangles in contact with grain edges. This indicates a high level of doping or degeneracy of the semiconductor at the grain edges. The electrodes deposited on flat WS2 crystallites form rectifying diodes with the underlying grains. Barrier heights of 0.56 0.74 eV and diode ideality factors between 1.15 and 2 are determined. Under illumination, open-circuit voltages up to 500 mV can be measured on some contacts. A short response time of the photocurrent is observed (100 ms), linked to trapping effects
at grain boundaries.		eng
dc.description.versionpublished
dc.format.mimetypeapplication/pdfdeu
dc.identifier.citationFirst publ. in: Journal of Vacuum Science and Technology / A, Vacuum, Surfaces, and Films, Vol. 16 (1998), 3, pp. 1239-1243deu
dc.identifier.doi10.1116/1.581266
dc.identifier.ppn265144981deu
dc.identifier.urihttp://kops.uni-konstanz.de/handle/123456789/9515
dc.language.isoengdeu
dc.legacy.dateIssued2007deu
dc.rightsAttribution-NonCommercial-NoDerivs 2.0 Generic
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/
dc.subject.ddc530deu
dc.titleSubmicron contacts for electrical characterization of semiconducting WS2 thin filmseng
dc.typeJOURNAL_ARTICLEdeu
dspace.entity.typePublication
kops.citation.bibtex
@article{Ballif1998Submi-9515,
  year={1998},
  doi={10.1116/1.581266},
  title={Submicron contacts for electrical characterization of semiconducting WS2 thin films},
  number={3},
  volume={16},
  journal={Journal of Vacuum Science and Technology / A, Vacuum, Surfaces, and Films},
  pages={1239--1243},
  author={Ballif, Christophe and Regula, Manfred and Lévy, Francis and Burmeister, Frank and Schäfle, Claudia and Matthes, Thomas and Leiderer, Paul and Niedermann, Philippe and Gutmannsbauer, W. and Bucher, Ron}
}
kops.citation.iso690BALLIF, Christophe, Manfred REGULA, Francis LÉVY, Frank BURMEISTER, Claudia SCHÄFLE, Thomas MATTHES, Paul LEIDERER, Philippe NIEDERMANN, W. GUTMANNSBAUER, Ron BUCHER, 1998. Submicron contacts for electrical characterization of semiconducting WS2 thin films. In: Journal of Vacuum Science and Technology / A, Vacuum, Surfaces, and Films. 1998, 16(3), pp. 1239-1243. Available under: doi: 10.1116/1.581266deu
kops.citation.iso690BALLIF, Christophe, Manfred REGULA, Francis LÉVY, Frank BURMEISTER, Claudia SCHÄFLE, Thomas MATTHES, Paul LEIDERER, Philippe NIEDERMANN, W. GUTMANNSBAUER, Ron BUCHER, 1998. Submicron contacts for electrical characterization of semiconducting WS2 thin films. In: Journal of Vacuum Science and Technology / A, Vacuum, Surfaces, and Films. 1998, 16(3), pp. 1239-1243. Available under: doi: 10.1116/1.581266eng
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    <dcterms:abstract xml:lang="eng">We report a new method to characterize the local electronic properties of polycrystalline semiconducting thin films. A lattice of triangular gold electrodes, with a typical area of 0.2 mm2, is evaporated on a p-type WS2 film. With the help of a conductive atomic force microscope, the current voltage characteristics of the contacts established between the gold electrodes and the WS2 film are measured. A linear dependence of the current versus voltage is  obtained on gold triangles in contact with grain edges. This indicates a high level of doping or degeneracy of the semiconductor at the grain edges. The electrodes deposited on flat WS2 crystallites form rectifying diodes with the underlying grains. Barrier heights of 0.56 0.74 eV and diode ideality factors between 1.15 and 2 are determined. Under illumination, open-circuit voltages up to 500 mV can be measured on some contacts. A short response time of the photocurrent is observed (100 ms), linked to trapping effects&lt;br /&gt;at grain boundaries.</dcterms:abstract>
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kops.sourcefieldJournal of Vacuum Science and Technology / A, Vacuum, Surfaces, and Films. 1998, <b>16</b>(3), pp. 1239-1243. Available under: doi: 10.1116/1.581266deu
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