Submicron contacts for electrical characterization of semiconducting WS2 thin films
Submicron contacts for electrical characterization of semiconducting WS2 thin films
Loading...
Date
1998
Authors
Ballif, Christophe
Regula, Manfred
Lévy, Francis
Burmeister, Frank
Schäfle, Claudia
Matthes, Thomas
Niedermann, Philippe
Gutmannsbauer, W.
Bucher, Ron
Editors
Journal ISSN
Electronic ISSN
ISBN
Bibliographical data
Publisher
Series
URI (citable link)
DOI (citable link)
International patent number
Link to the license
EU project number
Project
Open Access publication
Collections
Title in another language
Publication type
Journal article
Publication status
Published in
Journal of Vacuum Science and Technology / A, Vacuum, Surfaces, and Films ; 16 (1998), 3. - pp. 1239-1243
Abstract
We report a new method to characterize the local electronic properties of polycrystalline semiconducting thin films. A lattice of triangular gold electrodes, with a typical area of 0.2 mm2, is evaporated on a p-type WS2 film. With the help of a conductive atomic force microscope, the current voltage characteristics of the contacts established between the gold electrodes and the WS2 film are measured. A linear dependence of the current versus voltage is obtained on gold triangles in contact with grain edges. This indicates a high level of doping or degeneracy of the semiconductor at the grain edges. The electrodes deposited on flat WS2 crystallites form rectifying diodes with the underlying grains. Barrier heights of 0.56 0.74 eV and diode ideality factors between 1.15 and 2 are determined. Under illumination, open-circuit voltages up to 500 mV can be measured on some contacts. A short response time of the photocurrent is observed (100 ms), linked to trapping effects
at grain boundaries.
at grain boundaries.
Summary in another language
Subject (DDC)
530 Physics
Keywords
Conference
Review
undefined / . - undefined, undefined. - (undefined; undefined)
Cite This
ISO 690
BALLIF, Christophe, Manfred REGULA, Francis LÉVY, Frank BURMEISTER, Claudia SCHÄFLE, Thomas MATTHES, Paul LEIDERER, Philippe NIEDERMANN, W. GUTMANNSBAUER, Ron BUCHER, 1998. Submicron contacts for electrical characterization of semiconducting WS2 thin films. In: Journal of Vacuum Science and Technology / A, Vacuum, Surfaces, and Films. 16(3), pp. 1239-1243. Available under: doi: 10.1116/1.581266BibTex
@article{Ballif1998Submi-9515, year={1998}, doi={10.1116/1.581266}, title={Submicron contacts for electrical characterization of semiconducting WS2 thin films}, number={3}, volume={16}, journal={Journal of Vacuum Science and Technology / A, Vacuum, Surfaces, and Films}, pages={1239--1243}, author={Ballif, Christophe and Regula, Manfred and Lévy, Francis and Burmeister, Frank and Schäfle, Claudia and Matthes, Thomas and Leiderer, Paul and Niedermann, Philippe and Gutmannsbauer, W. and Bucher, Ron} }
RDF
<rdf:RDF xmlns:dcterms="http://purl.org/dc/terms/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#" xmlns:foaf="http://xmlns.com/foaf/0.1/" xmlns:void="http://rdfs.org/ns/void#" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/9515"> <dc:language>eng</dc:language> <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T17:57:37Z</dc:date> <dc:contributor>Regula, Manfred</dc:contributor> <foaf:homepage rdf:resource="http://localhost:8080/"/> <dc:contributor>Matthes, Thomas</dc:contributor> <dc:creator>Burmeister, Frank</dc:creator> <dc:contributor>Schäfle, Claudia</dc:contributor> <dc:creator>Leiderer, Paul</dc:creator> <dc:creator>Bucher, Ron</dc:creator> <dcterms:issued>1998</dcterms:issued> <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/9515/1/233_jvacscitech_1998.pdf"/> <dc:contributor>Bucher, Ron</dc:contributor> <dc:contributor>Niedermann, Philippe</dc:contributor> <dc:creator>Regula, Manfred</dc:creator> <dc:creator>Matthes, Thomas</dc:creator> <dc:creator>Schäfle, Claudia</dc:creator> <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> <dc:creator>Lévy, Francis</dc:creator> <dc:contributor>Leiderer, Paul</dc:contributor> <dcterms:abstract xml:lang="eng">We report a new method to characterize the local electronic properties of polycrystalline semiconducting thin films. A lattice of triangular gold electrodes, with a typical area of 0.2 mm2, is evaporated on a p-type WS2 film. With the help of a conductive atomic force microscope, the current voltage characteristics of the contacts established between the gold electrodes and the WS2 film are measured. A linear dependence of the current versus voltage is obtained on gold triangles in contact with grain edges. This indicates a high level of doping or degeneracy of the semiconductor at the grain edges. The electrodes deposited on flat WS2 crystallites form rectifying diodes with the underlying grains. Barrier heights of 0.56 0.74 eV and diode ideality factors between 1.15 and 2 are determined. Under illumination, open-circuit voltages up to 500 mV can be measured on some contacts. A short response time of the photocurrent is observed (100 ms), linked to trapping effects<br />at grain boundaries.</dcterms:abstract> <dc:creator>Niedermann, Philippe</dc:creator> <dc:creator>Gutmannsbauer, W.</dc:creator> <dc:contributor>Burmeister, Frank</dc:contributor> <dcterms:rights rdf:resource="http://creativecommons.org/licenses/by-nc-nd/2.0/"/> <dcterms:bibliographicCitation>First publ. in: Journal of Vacuum Science and Technology / A, Vacuum, Surfaces, and Films, Vol. 16 (1998), 3, pp. 1239-1243</dcterms:bibliographicCitation> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/9515"/> <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/9515/1/233_jvacscitech_1998.pdf"/> <dc:rights>Attribution-NonCommercial-NoDerivs 2.0 Generic</dc:rights> <dc:contributor>Ballif, Christophe</dc:contributor> <dc:creator>Ballif, Christophe</dc:creator> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T17:57:37Z</dcterms:available> <dc:contributor>Gutmannsbauer, W.</dc:contributor> <dc:contributor>Lévy, Francis</dc:contributor> <dc:format>application/pdf</dc:format> <dcterms:title>Submicron contacts for electrical characterization of semiconducting WS2 thin films</dcterms:title> </rdf:Description> </rdf:RDF>
Internal note
xmlui.Submission.submit.DescribeStep.inputForms.label.kops_note_fromSubmitter
Examination date of dissertation
Method of financing
Comment on publication
Alliance license
Corresponding Authors der Uni Konstanz vorhanden
International Co-Authors
Bibliography of Konstanz
No