Low Surface Recombination Velocity using amorphous Silicon on industrial-type cleaned Surfaces

Kurzanzeige
dc.contributor.authorGloger, Sebastian
dc.contributor.authorBrinkmann, Nils H.
dc.contributor.authorTerheiden, Barbara
dc.date.accessioned2012-02-01T11:30:50Zdeu
dc.date.available2012-02-01T11:30:50Zdeu
dc.date.issued2011
dc.description.abstractThe surface passivation ability of a hydrogenated amorphous silicon (a-Si:H) layer is investigated on industrial-type cleaned p-type (2 Ωcm) FZ and Cz silicon wafers. The cleaning sequence consists of laser/saw damage removal and immersions in aqueous HCl and HF solutions. After this cleaning an effective surface recombination velocity Seff of 1.0 cm/s is achieved with a deposited and annealed a-Si:H-layer. No RCA or similar elaborate cleaning steps are needed to achieve this low surface recombination velocity. After a firing step in a belt furnace at a wafer temperature of up to 670 °C the passivation ability of the a-Si:H layer is fully restored during hydrogen annealing. It is shown that the amount of silicon hydrogen bonds in the a-Si:H layer is correlated to the degradation and recovery of the passivation quality of the a-Si:H layer.eng
dc.description.versionpublished
dc.identifier.citationPubl. in: Engergy procedia ; 8 (2011), . - S. 666-671deu
dc.identifier.doi10.1016/j.egypro.2011.06.199deu
dc.identifier.urihttp://kops.uni-konstanz.de/handle/123456789/17689
dc.language.isoengdeu
dc.legacy.dateIssued2012-02-01deu
dc.rightsterms-of-usedeu
dc.rights.urihttps://rightsstatements.org/page/InC/1.0/deu
dc.subjectPassivationdeu
dc.subjecthydrogenated amorphous silicondeu
dc.subjectindustrial cleaningdeu
dc.subject.ddc530deu
dc.titleLow Surface Recombination Velocity using amorphous Silicon on industrial-type cleaned Surfaceseng
dc.typeJOURNAL_ARTICLE
dspace.entity.typePublication
kops.citation.bibtex
@article{Gloger2011Surfa-17689,
  year={2011},
  doi={10.1016/j.egypro.2011.06.199},
  title={Low Surface Recombination Velocity using amorphous Silicon on industrial-type cleaned Surfaces},
  volume={8},
  issn={1876-6102},
  journal={Energy Procedia},
  pages={666--671},
  author={Gloger, Sebastian and Brinkmann, Nils H. and Terheiden, Barbara}
}
kops.citation.iso690GLOGER, Sebastian, Nils H. BRINKMANN, Barbara TERHEIDEN, 2011. Low Surface Recombination Velocity using amorphous Silicon on industrial-type cleaned Surfaces. In: Energy Procedia. 2011, 8, pp. 666-671. ISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2011.06.199deu
kops.citation.iso690GLOGER, Sebastian, Nils H. BRINKMANN, Barbara TERHEIDEN, 2011. Low Surface Recombination Velocity using amorphous Silicon on industrial-type cleaned Surfaces. In: Energy Procedia. 2011, 8, pp. 666-671. ISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2011.06.199eng
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kops.sourcefieldEnergy Procedia. 2011, <b>8</b>, pp. 666-671. ISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2011.06.199deu
kops.sourcefield.plainEnergy Procedia. 2011, 8, pp. 666-671. ISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2011.06.199deu
kops.sourcefield.plainEnergy Procedia. 2011, 8, pp. 666-671. ISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2011.06.199eng
kops.submitter.emailsebastian.gloger@uni-konstanz.dedeu
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