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Low Surface Recombination Velocity using amorphous Silicon on industrial-type cleaned Surfaces

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2011

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Energy Procedia. 2011, 8, pp. 666-671. ISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2011.06.199

Zusammenfassung

The surface passivation ability of a hydrogenated amorphous silicon (a-Si:H) layer is investigated on industrial-type cleaned p-type (2 Ωcm) FZ and Cz silicon wafers. The cleaning sequence consists of laser/saw damage removal and immersions in aqueous HCl and HF solutions. After this cleaning an effective surface recombination velocity Seff of 1.0 cm/s is achieved with a deposited and annealed a-Si:H-layer. No RCA or similar elaborate cleaning steps are needed to achieve this low surface recombination velocity. After a firing step in a belt furnace at a wafer temperature of up to 670 °C the passivation ability of the a-Si:H layer is fully restored during hydrogen annealing. It is shown that the amount of silicon hydrogen bonds in the a-Si:H layer is correlated to the degradation and recovery of the passivation quality of the a-Si:H layer.

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530 Physik

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Passivation, hydrogenated amorphous silicon, industrial cleaning

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ISO 690GLOGER, Sebastian, Nils H. BRINKMANN, Barbara TERHEIDEN, 2011. Low Surface Recombination Velocity using amorphous Silicon on industrial-type cleaned Surfaces. In: Energy Procedia. 2011, 8, pp. 666-671. ISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2011.06.199
BibTex
@article{Gloger2011Surfa-17689,
  year={2011},
  doi={10.1016/j.egypro.2011.06.199},
  title={Low Surface Recombination Velocity using amorphous Silicon on industrial-type cleaned Surfaces},
  volume={8},
  issn={1876-6102},
  journal={Energy Procedia},
  pages={666--671},
  author={Gloger, Sebastian and Brinkmann, Nils H. and Terheiden, Barbara}
}
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