Low Surface Recombination Velocity using amorphous Silicon on industrial-type cleaned Surfaces

Gloger, Sebastian; Brinkmann, Nils H.; Terheiden, Barbara

Low Surface Recombination Velocity using amorphous Silicon on industrial-type cleaned Surfaces

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Datum

2011

Publikationstyp

Zeitschriftenartikel

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Energy Procedia. 2011, 8, pp. 666-671. ISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2011.06.199

Zusammenfassung

The surface passivation ability of a hydrogenated amorphous silicon (a-Si:H) layer is investigated on industrial-type cleaned p-type (2 Ωcm) FZ and Cz silicon wafers. The cleaning sequence consists of laser/saw damage removal and immersions in aqueous HCl and HF solutions. After this cleaning an effective surface recombination velocity Seff of 1.0 cm/s is achieved with a deposited and annealed a-Si:H-layer. No RCA or similar elaborate cleaning steps are needed to achieve this low surface recombination velocity. After a firing step in a belt furnace at a wafer temperature of up to 670 °C the passivation ability of the a-Si:H layer is fully restored during hydrogen annealing. It is shown that the amount of silicon hydrogen bonds in the a-Si:H layer is correlated to the degradation and recovery of the passivation quality of the a-Si:H layer.

Fachgebiet (DDC)

530 Physik

Schlagwörter

Passivation, hydrogenated amorphous silicon, industrial cleaning

Zitieren

ISO 690

GLOGER, Sebastian, Nils H. BRINKMANN, Barbara TERHEIDEN, 2011. Low Surface Recombination Velocity using amorphous Silicon on industrial-type cleaned Surfaces. In: Energy Procedia. 2011, 8, pp. 666-671. ISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2011.06.199

BibTex

@article{Gloger2011Surfa-17689,
  year={2011},
  doi={10.1016/j.egypro.2011.06.199},
  title={Low Surface Recombination Velocity using amorphous Silicon on industrial-type cleaned Surfaces},
  volume={8},
  issn={1876-6102},
  journal={Energy Procedia},
  pages={666--671},
  author={Gloger, Sebastian and Brinkmann, Nils H. and Terheiden, Barbara}
}

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