Publikation:

Fundamental Studies of Hydrogen at the Silicon / Silicon Nitride Interface

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Joos_0-259301.pdf
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Datum

2014

Autor:innen

Becker, Hans-Werner
Rogalla, Detlef

Herausgeber:innen

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URI (zitierfähiger Link)
http://nbn-resolving.de/urn:nbn:de:bsz:352-0-259301
DOI (zitierfähiger Link)
https://doi.org/10.1016/j.egypro.2014.08.060
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Link zur Lizenz
Attribution-NonCommercial-NoDerivs 3.0 Unported

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Open Access-Veröffentlichung
Open Access Gold

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Physik: Publikationen
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Published

Erschienen in

Energy Procedia. 2014, 55, pp. 786-790. eISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2014.08.060

Zusammenfassung

The quality of the interface between silicon and a dielectric is one of the main influencing parameters for crystalline silicon surface passivation. In this work, this interface is examined by means of capacitance voltage (CV) and nuclear resonance reaction analysis (NRRA) measurements for SiNx:H as well as SiO2 capped SiNx:H passivated p-type float zone silicon samples. Due to a highly sensitive NRRA measurement setup, very small differences in hydrogen concentration at the interface could be detected for the first time and a significant correlation between hydrogen concentration, interface state trap densities Dit and passivation quality is found. The results of this study present easily implementable processes to improve the quality of SiNx:H surface passivation and process stability for solar cell and module production applications. First optimised industrial type Al-BSF p-type cells feature 2 mV and 0.5 mA/cm² gains in Voc and jsc, leading to efficiencies of up to 19.1%.

Zusammenfassung in einer weiteren Sprache

Fachgebiet (DDC)
530 Physik

Schlagwörter

passivation; semiconductor-insulator boundaries; silicon nitride; silicon oxide

Konferenz

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ISO 690JOOS, Sebastian, Yvonne SCHIELE, Barbara TERHEIDEN, Hans-Werner BECKER, Detlef ROGALLA, Giso HAHN, 2014. Fundamental Studies of Hydrogen at the Silicon / Silicon Nitride Interface. In: Energy Procedia. 2014, 55, pp. 786-790. eISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2014.08.060
BibTex
@article{Joos2014Funda-29275,
  year={2014},
  doi={10.1016/j.egypro.2014.08.060},
  title={Fundamental Studies of Hydrogen at the Silicon / Silicon Nitride Interface},
  volume={55},
  journal={Energy Procedia},
  pages={786--790},
  author={Joos, Sebastian and Schiele, Yvonne and Terheiden, Barbara and Becker, Hans-Werner and Rogalla, Detlef and Hahn, Giso}
}
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