Fundamental Studies of Hydrogen at the Silicon / Silicon Nitride Interface

Kurzanzeige
dc.contributor.authorJoos, Sebastian
dc.contributor.authorSchiele, Yvonne
dc.contributor.authorTerheiden, Barbara
dc.contributor.authorBecker, Hans-Werner
dc.contributor.authorRogalla, Detlef
dc.contributor.authorHahn, Giso
dc.date.accessioned2014-11-21T14:22:03Z
dc.date.available2014-11-21T14:22:03Z
dc.date.issued2014eng
dc.description.abstractThe quality of the interface between silicon and a dielectric is one of the main influencing parameters for crystalline silicon surface passivation. In this work, this interface is examined by means of capacitance voltage (CV) and nuclear resonance reaction analysis (NRRA) measurements for SiNx:H as well as SiO2 capped SiNx:H passivated p-type float zone silicon samples. Due to a highly sensitive NRRA measurement setup, very small differences in hydrogen concentration at the interface could be detected for the first time and a significant correlation between hydrogen concentration, interface state trap densities Dit and passivation quality is found. The results of this study present easily implementable processes to improve the quality of SiNx:H surface passivation and process stability for solar cell and module production applications. First optimised industrial type Al-BSF p-type cells feature 2 mV and 0.5 mA/cm² gains in Voc and jsc, leading to efficiencies of up to 19.1%.eng
dc.description.versionpublished
dc.identifier.doi10.1016/j.egypro.2014.08.060eng
dc.identifier.ppn420027025
dc.identifier.urihttp://kops.uni-konstanz.de/handle/123456789/29275
dc.language.isoengeng
dc.rightsAttribution-NonCommercial-NoDerivs 3.0 Unported
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/
dc.subjectpassivation; semiconductor-insulator boundaries; silicon nitride; silicon oxideeng
dc.subject.ddc530eng
dc.titleFundamental Studies of Hydrogen at the Silicon / Silicon Nitride Interfaceeng
dc.typeJOURNAL_ARTICLEeng
dspace.entity.typePublication
kops.citation.bibtex
@article{Joos2014Funda-29275,
  year={2014},
  doi={10.1016/j.egypro.2014.08.060},
  title={Fundamental Studies of Hydrogen at the Silicon / Silicon Nitride Interface},
  volume={55},
  journal={Energy Procedia},
  pages={786--790},
  author={Joos, Sebastian and Schiele, Yvonne and Terheiden, Barbara and Becker, Hans-Werner and Rogalla, Detlef and Hahn, Giso}
}
kops.citation.iso690JOOS, Sebastian, Yvonne SCHIELE, Barbara TERHEIDEN, Hans-Werner BECKER, Detlef ROGALLA, Giso HAHN, 2014. Fundamental Studies of Hydrogen at the Silicon / Silicon Nitride Interface. In: Energy Procedia. 2014, 55, pp. 786-790. eISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2014.08.060deu
kops.citation.iso690JOOS, Sebastian, Yvonne SCHIELE, Barbara TERHEIDEN, Hans-Werner BECKER, Detlef ROGALLA, Giso HAHN, 2014. Fundamental Studies of Hydrogen at the Silicon / Silicon Nitride Interface. In: Energy Procedia. 2014, 55, pp. 786-790. eISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2014.08.060eng
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kops.sourcefieldEnergy Procedia. 2014, <b>55</b>, pp. 786-790. eISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2014.08.060deu
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kops.sourcefield.plainEnergy Procedia. 2014, 55, pp. 786-790. eISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2014.08.060eng
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temp.internal.duplicates<p>Keine Dubletten gefunden. Letzte Überprüfung: 13.11.2014 12:23:56</p>deu

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