Fundamental Studies of Hydrogen at the Silicon / Silicon Nitride Interface

Joos, Sebastian; Schiele, Yvonne; Terheiden, Barbara; Becker, Hans-Werner; Rogalla, Detlef; Hahn, Giso

Fundamental Studies of Hydrogen at the Silicon / Silicon Nitride Interface

Dateien

Joos_0-259301.pdfGröße: 598.67 KBDownloads: 233

Datum

2014

Autor:innen

Joos, Sebastian

Schiele, Yvonne

Terheiden, Barbara

Becker, Hans-Werner

Rogalla, Detlef

Hahn, Giso

Open Access-Veröffentlichung

Open Access Gold

Sammlungen

Physik

Publikationstyp

Zeitschriftenartikel

Publikationsstatus

Published

Erschienen in

Energy Procedia. 2014, 55, pp. 786-790. eISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2014.08.060

Zusammenfassung

The quality of the interface between silicon and a dielectric is one of the main influencing parameters for crystalline silicon surface passivation. In this work, this interface is examined by means of capacitance voltage (CV) and nuclear resonance reaction analysis (NRRA) measurements for SiN_x:H as well as SiO₂ capped SiN_x:H passivated p-type float zone silicon samples. Due to a highly sensitive NRRA measurement setup, very small differences in hydrogen concentration at the interface could be detected for the first time and a significant correlation between hydrogen concentration, interface state trap densities D_it and passivation quality is found. The results of this study present easily implementable processes to improve the quality of SiN_x:H surface passivation and process stability for solar cell and module production applications. First optimised industrial type Al-BSF p-type cells feature 2 mV and 0.5 mA/cm² gains in V_oc and j_sc, leading to efficiencies of up to 19.1%.

Fachgebiet (DDC)

530 Physik

Schlagwörter

passivation; semiconductor-insulator boundaries; silicon nitride; silicon oxide

Zitieren

ISO 690

JOOS, Sebastian, Yvonne SCHIELE, Barbara TERHEIDEN, Hans-Werner BECKER, Detlef ROGALLA, Giso HAHN, 2014. Fundamental Studies of Hydrogen at the Silicon / Silicon Nitride Interface. In: Energy Procedia. 2014, 55, pp. 786-790. eISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2014.08.060

BibTex

@article{Joos2014Funda-29275,
  year={2014},
  doi={10.1016/j.egypro.2014.08.060},
  title={Fundamental Studies of Hydrogen at the Silicon / Silicon Nitride Interface},
  volume={55},
  journal={Energy Procedia},
  pages={786--790},
  author={Joos, Sebastian and Schiele, Yvonne and Terheiden, Barbara and Becker, Hans-Werner and Rogalla, Detlef and Hahn, Giso}
}

RDF

<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/29275">
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2014-11-21T14:22:03Z</dcterms:available>
    <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/29275/3/Joos_0-259301.pdf"/>
    <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/29275"/>
    <dc:contributor>Joos, Sebastian</dc:contributor>
    <dc:creator>Hahn, Giso</dc:creator>
    <dcterms:abstract xml:lang="eng">The quality of the interface between silicon and a dielectric is one of the main influencing parameters for crystalline silicon surface passivation. In this work, this interface is examined by means of capacitance voltage (CV) and nuclear resonance reaction analysis (NRRA) measurements for SiN&lt;sub&gt;x&lt;/sub&gt;:H as well as SiO&lt;sub&gt;2&lt;/sub&gt; capped SiN&lt;sub&gt;x&lt;/sub&gt;:H passivated p-type float zone silicon samples. Due to a highly sensitive NRRA measurement setup, very small differences in hydrogen concentration at the interface could be detected for the first time and a significant correlation between hydrogen concentration, interface state trap densities D&lt;sub&gt;it&lt;/sub&gt; and passivation quality is found. The results of this study present easily implementable processes to improve the quality of SiN&lt;sub&gt;x&lt;/sub&gt;:H surface passivation and process stability for solar cell and module production applications. First optimised industrial type Al-BSF p-type cells feature 2 mV and 0.5 mA/cm² gains in V&lt;sub&gt;oc&lt;/sub&gt; and j&lt;sub&gt;sc&lt;/sub&gt;, leading to efficiencies of up to 19.1%.</dcterms:abstract>
    <dc:contributor>Hahn, Giso</dc:contributor>
    <dc:rights>Attribution-NonCommercial-NoDerivs 3.0 Unported</dc:rights>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dc:contributor>Terheiden, Barbara</dc:contributor>
    <dc:creator>Joos, Sebastian</dc:creator>
    <dcterms:issued>2014</dcterms:issued>
    <dc:contributor>Rogalla, Detlef</dc:contributor>
    <dc:contributor>Schiele, Yvonne</dc:contributor>
    <dc:creator>Schiele, Yvonne</dc:creator>
    <dcterms:rights rdf:resource="http://creativecommons.org/licenses/by-nc-nd/3.0/"/>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2014-11-21T14:22:03Z</dc:date>
    <dc:creator>Terheiden, Barbara</dc:creator>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <dc:contributor>Becker, Hans-Werner</dc:contributor>
    <dc:creator>Rogalla, Detlef</dc:creator>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dcterms:title>Fundamental Studies of Hydrogen at the Silicon / Silicon Nitride Interface</dcterms:title>
    <dc:language>eng</dc:language>
    <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/29275/3/Joos_0-259301.pdf"/>
    <dc:creator>Becker, Hans-Werner</dc:creator>
  </rdf:Description>
</rdf:RDF>

Universitätsbibliographie

Ja