Fundamental Studies of Hydrogen at the Silicon / Silicon Nitride Interface

Lade...
Vorschaubild
Dateien
Joos_0-259301.pdf
Joos_0-259301.pdfGröße: 598.67 KBDownloads: 231
Datum
2014
Autor:innen
Herausgeber:innen
Kontakt
ISSN der Zeitschrift
Electronic ISSN
ISBN
Bibliografische Daten
Verlag
Schriftenreihe
Auflagebezeichnung
ArXiv-ID
Internationale Patentnummer
Angaben zur Forschungsförderung
Projekt
Open Access-Veröffentlichung
Open Access Gold
Sammlungen
Core Facility der Universität Konstanz
Gesperrt bis
Titel in einer weiteren Sprache
Forschungsvorhaben
Organisationseinheiten
Zeitschriftenheft
Publikationstyp
Zeitschriftenartikel
Publikationsstatus
Published
Erschienen in
Energy Procedia. 2014, 55, pp. 786-790. eISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2014.08.060
Zusammenfassung

The quality of the interface between silicon and a dielectric is one of the main influencing parameters for crystalline silicon surface passivation. In this work, this interface is examined by means of capacitance voltage (CV) and nuclear resonance reaction analysis (NRRA) measurements for SiNx:H as well as SiO2 capped SiNx:H passivated p-type float zone silicon samples. Due to a highly sensitive NRRA measurement setup, very small differences in hydrogen concentration at the interface could be detected for the first time and a significant correlation between hydrogen concentration, interface state trap densities Dit and passivation quality is found. The results of this study present easily implementable processes to improve the quality of SiNx:H surface passivation and process stability for solar cell and module production applications. First optimised industrial type Al-BSF p-type cells feature 2 mV and 0.5 mA/cm² gains in Voc and jsc, leading to efficiencies of up to 19.1%.

Zusammenfassung in einer weiteren Sprache
Fachgebiet (DDC)
530 Physik
Schlagwörter
passivation; semiconductor-insulator boundaries; silicon nitride; silicon oxide
Konferenz
Rezension
undefined / . - undefined, undefined
Zitieren
ISO 690JOOS, Sebastian, Yvonne SCHIELE, Barbara TERHEIDEN, Hans-Werner BECKER, Detlef ROGALLA, Giso HAHN, 2014. Fundamental Studies of Hydrogen at the Silicon / Silicon Nitride Interface. In: Energy Procedia. 2014, 55, pp. 786-790. eISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2014.08.060
BibTex
@article{Joos2014Funda-29275,
  year={2014},
  doi={10.1016/j.egypro.2014.08.060},
  title={Fundamental Studies of Hydrogen at the Silicon / Silicon Nitride Interface},
  volume={55},
  journal={Energy Procedia},
  pages={786--790},
  author={Joos, Sebastian and Schiele, Yvonne and Terheiden, Barbara and Becker, Hans-Werner and Rogalla, Detlef and Hahn, Giso}
}
RDF
<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/29275">
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2014-11-21T14:22:03Z</dcterms:available>
    <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/29275/3/Joos_0-259301.pdf"/>
    <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/29275"/>
    <dc:contributor>Joos, Sebastian</dc:contributor>
    <dc:creator>Hahn, Giso</dc:creator>
    <dcterms:abstract xml:lang="eng">The quality of the interface between silicon and a dielectric is one of the main influencing parameters for crystalline silicon surface passivation. In this work, this interface is examined by means of capacitance voltage (CV) and nuclear resonance reaction analysis (NRRA) measurements for SiN&lt;sub&gt;x&lt;/sub&gt;:H as well as SiO&lt;sub&gt;2&lt;/sub&gt; capped SiN&lt;sub&gt;x&lt;/sub&gt;:H passivated p-type float zone silicon samples. Due to a highly sensitive NRRA measurement setup, very small differences in hydrogen concentration at the interface could be detected for the first time and a significant correlation between hydrogen concentration, interface state trap densities D&lt;sub&gt;it&lt;/sub&gt; and passivation quality is found. The results of this study present easily implementable processes to improve the quality of SiN&lt;sub&gt;x&lt;/sub&gt;:H surface passivation and process stability for solar cell and module production applications. First optimised industrial type Al-BSF p-type cells feature 2 mV and 0.5 mA/cm² gains in V&lt;sub&gt;oc&lt;/sub&gt; and j&lt;sub&gt;sc&lt;/sub&gt;, leading to efficiencies of up to 19.1%.</dcterms:abstract>
    <dc:contributor>Hahn, Giso</dc:contributor>
    <dc:rights>Attribution-NonCommercial-NoDerivs 3.0 Unported</dc:rights>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dc:contributor>Terheiden, Barbara</dc:contributor>
    <dc:creator>Joos, Sebastian</dc:creator>
    <dcterms:issued>2014</dcterms:issued>
    <dc:contributor>Rogalla, Detlef</dc:contributor>
    <dc:contributor>Schiele, Yvonne</dc:contributor>
    <dc:creator>Schiele, Yvonne</dc:creator>
    <dcterms:rights rdf:resource="http://creativecommons.org/licenses/by-nc-nd/3.0/"/>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2014-11-21T14:22:03Z</dc:date>
    <dc:creator>Terheiden, Barbara</dc:creator>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <dc:contributor>Becker, Hans-Werner</dc:contributor>
    <dc:creator>Rogalla, Detlef</dc:creator>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dcterms:title>Fundamental Studies of Hydrogen at the Silicon / Silicon Nitride Interface</dcterms:title>
    <dc:language>eng</dc:language>
    <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/29275/3/Joos_0-259301.pdf"/>
    <dc:creator>Becker, Hans-Werner</dc:creator>
  </rdf:Description>
</rdf:RDF>
Interner Vermerk
xmlui.Submission.submit.DescribeStep.inputForms.label.kops_note_fromSubmitter
Kontakt
URL der Originalveröffentl.
Prüfdatum der URL
Prüfungsdatum der Dissertation
Finanzierungsart
Kommentar zur Publikation
Allianzlizenz
Corresponding Authors der Uni Konstanz vorhanden
Internationale Co-Autor:innen
Universitätsbibliographie
Ja
Begutachtet
Diese Publikation teilen