Breaking of Valley Degeneracy by Magnetic Field in Monolayer MoSe2

Kurzanzeige
dc.contributor.authorMacNeill, David
dc.contributor.authorHeikes, Colin
dc.contributor.authorMak, Kin Fai
dc.contributor.authorAnderson, Zackary
dc.contributor.authorKormányos, Andor
dc.contributor.authorZólyomi, Viktor
dc.contributor.authorPark, Jiwoong
dc.contributor.authorRalph, Daniel C.
dc.date.accessioned2015-05-29T05:45:06Z
dc.date.available2015-05-29T05:45:06Z
dc.date.issued2015eng
dc.description.abstractUsing polarization-resolved photoluminescence spectroscopy, we investigate the breaking of valley degeneracy by an out-of-plane magnetic field in back-gated monolayer MoSe2 devices. We observe a linear splitting of −0.22  meV/T between luminescence peak energies in σ+ and σ− emission for both neutral and charged excitons. The optical selection rules of monolayer MoSe2 couple the photon handedness to the exciton valley degree of freedom; so this splitting demonstrates valley degeneracy breaking. In addition, we find that the luminescence handedness can be controlled with a magnetic field to a degree that depends on the back-gate voltage. An applied magnetic field, therefore, provides effective strategies for control over the valley degree of freedom.eng
dc.description.versionpublished
dc.identifier.doi10.1103/PhysRevLett.114.037401eng
dc.identifier.urihttp://kops.uni-konstanz.de/handle/123456789/31056
dc.language.isoengeng
dc.subject.ddc530eng
dc.titleBreaking of Valley Degeneracy by Magnetic Field in Monolayer MoSe<sub>2</sub>eng
dc.typeJOURNAL_ARTICLEeng
dspace.entity.typePublication
kops.citation.bibtex
@article{MacNeill2015Break-31056,
  year={2015},
  doi={10.1103/PhysRevLett.114.037401},
  title={Breaking of Valley Degeneracy by Magnetic Field in Monolayer MoSe<sub>2</sub>},
  number={3},
  volume={114},
  issn={0031-9007},
  journal={Physical Review Letters},
  author={MacNeill, David and Heikes, Colin and Mak, Kin Fai and Anderson, Zackary and Kormányos, Andor and Zólyomi, Viktor and Park, Jiwoong and Ralph, Daniel C.},
  note={Article Number: 037401}
}
kops.citation.iso690MACNEILL, David, Colin HEIKES, Kin Fai MAK, Zackary ANDERSON, Andor KORMÁNYOS, Viktor ZÓLYOMI, Jiwoong PARK, Daniel C. RALPH, 2015. Breaking of Valley Degeneracy by Magnetic Field in Monolayer MoSe2. In: Physical Review Letters. 2015, 114(3), 037401. ISSN 0031-9007. eISSN 1079-7114. Available under: doi: 10.1103/PhysRevLett.114.037401deu
kops.citation.iso690MACNEILL, David, Colin HEIKES, Kin Fai MAK, Zackary ANDERSON, Andor KORMÁNYOS, Viktor ZÓLYOMI, Jiwoong PARK, Daniel C. RALPH, 2015. Breaking of Valley Degeneracy by Magnetic Field in Monolayer MoSe2. In: Physical Review Letters. 2015, 114(3), 037401. ISSN 0031-9007. eISSN 1079-7114. Available under: doi: 10.1103/PhysRevLett.114.037401eng
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    <dcterms:abstract xml:lang="eng">Using polarization-resolved photoluminescence spectroscopy, we investigate the breaking of valley degeneracy by an out-of-plane magnetic field in back-gated monolayer MoSe&lt;sub&gt;2&lt;/sub&gt; devices. We observe a linear splitting of −0.22  meV/T between luminescence peak energies in σ&lt;sub&gt;+&lt;/sub&gt; and σ&lt;sub&gt;−&lt;/sub&gt; emission for both neutral and charged excitons. The optical selection rules of monolayer MoSe&lt;sub&gt;2&lt;/sub&gt; couple the photon handedness to the exciton valley degree of freedom; so this splitting demonstrates valley degeneracy breaking. In addition, we find that the luminescence handedness can be controlled with a magnetic field to a degree that depends on the back-gate voltage. An applied magnetic field, therefore, provides effective strategies for control over the valley degree of freedom.</dcterms:abstract>
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kops.sourcefieldPhysical Review Letters. 2015, <b>114</b>(3), 037401. ISSN 0031-9007. eISSN 1079-7114. Available under: doi: 10.1103/PhysRevLett.114.037401deu
kops.sourcefield.plainPhysical Review Letters. 2015, 114(3), 037401. ISSN 0031-9007. eISSN 1079-7114. Available under: doi: 10.1103/PhysRevLett.114.037401deu
kops.sourcefield.plainPhysical Review Letters. 2015, 114(3), 037401. ISSN 0031-9007. eISSN 1079-7114. Available under: doi: 10.1103/PhysRevLett.114.037401eng
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source.periodicalTitlePhysical Review Letterseng
temp.internal.duplicates<p>Keine Dubletten gefunden. Letzte Überprüfung: 27.02.2015 11:31:32</p>deu

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