Breaking of Valley Degeneracy by Magnetic Field in Monolayer MoSe2
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Using polarization-resolved photoluminescence spectroscopy, we investigate the breaking of valley degeneracy by an out-of-plane magnetic field in back-gated monolayer MoSe2 devices. We observe a linear splitting of −0.22 meV/T between luminescence peak energies in σ+ and σ− emission for both neutral and charged excitons. The optical selection rules of monolayer MoSe2 couple the photon handedness to the exciton valley degree of freedom; so this splitting demonstrates valley degeneracy breaking. In addition, we find that the luminescence handedness can be controlled with a magnetic field to a degree that depends on the back-gate voltage. An applied magnetic field, therefore, provides effective strategies for control over the valley degree of freedom.
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MACNEILL, David, Colin HEIKES, Kin Fai MAK, Zackary ANDERSON, Andor KORMÁNYOS, Viktor ZÓLYOMI, Jiwoong PARK, Daniel C. RALPH, 2015. Breaking of Valley Degeneracy by Magnetic Field in Monolayer MoSe2. In: Physical Review Letters. 2015, 114(3), 037401. ISSN 0031-9007. eISSN 1079-7114. Available under: doi: 10.1103/PhysRevLett.114.037401BibTex
@article{MacNeill2015Break-31056, year={2015}, doi={10.1103/PhysRevLett.114.037401}, title={Breaking of Valley Degeneracy by Magnetic Field in Monolayer MoSe<sub>2</sub>}, number={3}, volume={114}, issn={0031-9007}, journal={Physical Review Letters}, author={MacNeill, David and Heikes, Colin and Mak, Kin Fai and Anderson, Zackary and Kormányos, Andor and Zólyomi, Viktor and Park, Jiwoong and Ralph, Daniel C.}, note={Article Number: 037401} }
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