Defect analysis of APCVD gettered multicrystalline silicon

Kurzanzeige
dc.contributor.authorFleck, Martin
dc.contributor.authorLindroos, Jeanette
dc.contributor.authorZuschlag, Annika
dc.contributor.authorHahn, Giso
dc.date.accessioned2019-02-25T13:00:49Z
dc.date.available2019-02-25T13:00:49Z
dc.date.issued2018eng
dc.description.abstractThe effects of atmospheric pressure chemical vapor deposition (APCVD) gettering on material quality of industry standard mc-Si wafers has been studied on a microscopic level and compared to POCl3 gettered samples. The interaction of the gettering efficacy with the microscopic defect structure has been studied by a combination of measurements of the effective minority charge carrier lifetime (eff), interstitial iron (Fei), optical microscope images of defect structures revealed with Secco etching, a subsequent high resolution etch pit density (EPD) analysis as well as Electron Beam Induced Current (EBIC) and Electron Backscatter Diffraction (EBSD). Findings include a similar gettering quality of APCVD- and POCl3-based glasses and a reduction of EPD after the gettering step.eng
dc.description.versionpublishedeng
dc.identifier.ppn518183947
dc.identifier.urihttps://kops.uni-konstanz.de/handle/123456789/45202
dc.language.isoengeng
dc.rightsterms-of-use
dc.rights.urihttps://rightsstatements.org/page/InC/1.0/
dc.subjectDefects, Gettering, Lifetime, APCVD, Multicrystalline Siliconeng
dc.subject.ddc530eng
dc.titleDefect analysis of APCVD gettered multicrystalline siliconeng
dc.typeINPROCEEDINGSeng
dspace.entity.typePublication
kops.citation.bibtex
@inproceedings{Fleck2018Defec-45202,
  year={2018},
  title={Defect analysis of APCVD gettered multicrystalline silicon},
  url={https://www.eupvsec-planner.com/presentations/c45930/defect_analysis_of_apcvd_gettered_multicrystalline_silicon.htm},
  isbn={978-3-936338-50-8},
  publisher={WIP},
  address={München},
  booktitle={35th European Photovoltaic Solar Energy Conference and Exhibition},
  pages={527--530},
  editor={Verlinden, Pierre},
  author={Fleck, Martin and Lindroos, Jeanette and Zuschlag, Annika and Hahn, Giso}
}
kops.citation.iso690FLECK, Martin, Jeanette LINDROOS, Annika ZUSCHLAG, Giso HAHN, 2018. Defect analysis of APCVD gettered multicrystalline silicon. 35th European Photovoltaic Solar Energy Conference and Exhibition. Brussels, 24. Sept. 2018 - 28. Okt. 2018. In: VERLINDEN, Pierre, ed. and others. 35th European Photovoltaic Solar Energy Conference and Exhibition. München: WIP, 2018, pp. 527-530. ISBN 978-3-936338-50-8deu
kops.citation.iso690FLECK, Martin, Jeanette LINDROOS, Annika ZUSCHLAG, Giso HAHN, 2018. Defect analysis of APCVD gettered multicrystalline silicon. 35th European Photovoltaic Solar Energy Conference and Exhibition. Brussels, Sep 24, 2018 - Oct 28, 2018. In: VERLINDEN, Pierre, ed. and others. 35th European Photovoltaic Solar Energy Conference and Exhibition. München: WIP, 2018, pp. 527-530. ISBN 978-3-936338-50-8eng
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kops.conferencefield35th European Photovoltaic Solar Energy Conference and Exhibition, 24. Sept. 2018 - 28. Okt. 2018, Brusselsdeu
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kops.date.conferenceStart2018-09-24eng
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kops.sourcefieldVERLINDEN, Pierre, ed. and others. <i>35th European Photovoltaic Solar Energy Conference and Exhibition</i>. München: WIP, 2018, pp. 527-530. ISBN 978-3-936338-50-8deu
kops.sourcefield.plainVERLINDEN, Pierre, ed. and others. 35th European Photovoltaic Solar Energy Conference and Exhibition. München: WIP, 2018, pp. 527-530. ISBN 978-3-936338-50-8deu
kops.sourcefield.plainVERLINDEN, Pierre, ed. and others. 35th European Photovoltaic Solar Energy Conference and Exhibition. München: WIP, 2018, pp. 527-530. ISBN 978-3-936338-50-8eng
kops.title.conference35th European Photovoltaic Solar Energy Conference and Exhibitioneng
kops.urlhttps://www.eupvsec-planner.com/presentations/c45930/defect_analysis_of_apcvd_gettered_multicrystalline_silicon.htm
kops.urlDate2019-02-25
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source.title35th European Photovoltaic Solar Energy Conference and Exhibitioneng

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