Publikation: Defect analysis of APCVD gettered multicrystalline silicon
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2018
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VERLINDEN, Pierre, ed. and others. 35th European Photovoltaic Solar Energy Conference and Exhibition. München: WIP, 2018, pp. 527-530. ISBN 978-3-936338-50-8
Zusammenfassung
The effects of atmospheric pressure chemical vapor deposition (APCVD) gettering on material quality of industry standard mc-Si wafers has been studied on a microscopic level and compared to POCl3 gettered samples. The interaction of the gettering efficacy with the microscopic defect structure has been studied by a combination of measurements of the effective minority charge carrier lifetime (eff), interstitial iron (Fei), optical microscope images of defect structures revealed with Secco etching, a subsequent high resolution etch pit density (EPD) analysis as well as Electron Beam Induced Current (EBIC) and Electron Backscatter Diffraction (EBSD). Findings include a similar gettering quality of APCVD- and POCl3-based glasses and a reduction of EPD after the gettering step.
Zusammenfassung in einer weiteren Sprache
Fachgebiet (DDC)
530 Physik
Schlagwörter
Defects, Gettering, Lifetime, APCVD, Multicrystalline Silicon
Konferenz
35th European Photovoltaic Solar Energy Conference and Exhibition, 24. Sept. 2018 - 28. Okt. 2018, Brussels
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ISO 690
FLECK, Martin, Jeanette LINDROOS, Annika ZUSCHLAG, Giso HAHN, 2018. Defect analysis of APCVD gettered multicrystalline silicon. 35th European Photovoltaic Solar Energy Conference and Exhibition. Brussels, 24. Sept. 2018 - 28. Okt. 2018. In: VERLINDEN, Pierre, ed. and others. 35th European Photovoltaic Solar Energy Conference and Exhibition. München: WIP, 2018, pp. 527-530. ISBN 978-3-936338-50-8BibTex
@inproceedings{Fleck2018Defec-45202,
year={2018},
title={Defect analysis of APCVD gettered multicrystalline silicon},
url={https://www.eupvsec-planner.com/presentations/c45930/defect_analysis_of_apcvd_gettered_multicrystalline_silicon.htm},
isbn={978-3-936338-50-8},
publisher={WIP},
address={München},
booktitle={35th European Photovoltaic Solar Energy Conference and Exhibition},
pages={527--530},
editor={Verlinden, Pierre},
author={Fleck, Martin and Lindroos, Jeanette and Zuschlag, Annika and Hahn, Giso}
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<dcterms:abstract xml:lang="eng">The effects of atmospheric pressure chemical vapor deposition (APCVD) gettering on material quality of industry standard mc-Si wafers has been studied on a microscopic level and compared to POCl3 gettered samples. The interaction of the gettering efficacy with the microscopic defect structure has been studied by a combination of measurements of the effective minority charge carrier lifetime (eff), interstitial iron (Fei), optical microscope images of defect structures revealed with Secco etching, a subsequent high resolution etch pit density (EPD) analysis as well as Electron Beam Induced Current (EBIC) and Electron Backscatter Diffraction (EBSD). Findings include a similar gettering quality of APCVD- and POCl3-based glasses and a reduction of EPD after the gettering step.</dcterms:abstract>
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2019-02-25
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