Laser-annealing of thin semiconductor films
| dc.contributor.author | Boneberg, Johannes | |
| dc.contributor.author | Nedelcu, Johann | deu |
| dc.contributor.author | Bucher, Ernst | |
| dc.contributor.author | Leiderer, Paul | |
| dc.date.accessioned | 2011-03-24T14:51:36Z | deu |
| dc.date.available | 2011-03-24T14:51:36Z | deu |
| dc.date.issued | 1994-12-12 | |
| dc.description.abstract | Optical reflectivity and transmissivity measurements have been used to investigate the dynamics of melting and recrystallisation of thin films of Si and Ge after laser-annealing with a ns Nd:YAG-laser pulse. We report on temperature dependent changes of the reflectivity of the liquid phase above and below the melting point and on various nucleation and solidification scenarios in thin film, depending on the energy density of the amding laser. | eng |
| dc.description.version | published | |
| dc.format.mimetype | application/pdf | deu |
| dc.identifier.citation | First publ. in: Second International Symposium on Advanced Laser Technologies, Proceedings of SPIE 2332 (1993), pp. 1-14 | deu |
| dc.identifier.doi | 10.1117/12.195876 | |
| dc.identifier.ppn | 265724333 | deu |
| dc.identifier.uri | http://kops.uni-konstanz.de/handle/123456789/4948 | |
| dc.language.iso | eng | deu |
| dc.legacy.dateIssued | 2007 | deu |
| dc.rights | Attribution-NonCommercial-NoDerivs 2.0 Generic | |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/ | |
| dc.subject.ddc | 530 | deu |
| dc.title | Laser-annealing of thin semiconductor films | eng |
| dc.type | INPROCEEDINGS | deu |
| dspace.entity.type | Publication | |
| kops.citation.bibtex | @inproceedings{Boneberg1994-12-12Laser-4948,
year={1994},
doi={10.1117/12.195876},
title={Laser-annealing of thin semiconductor films},
number={2332},
publisher={SPIE},
series={SPIE Proceedings},
booktitle={Second International Symposium on Advanced Laser Technologies},
pages={2--15},
editor={Pustovoy, Vladimir I. and Jelinek, Miroslav},
author={Boneberg, Johannes and Nedelcu, Johann and Bucher, Ernst and Leiderer, Paul}
} | |
| kops.citation.iso690 | BONEBERG, Johannes, Johann NEDELCU, Ernst BUCHER, Paul LEIDERER, 1994. Laser-annealing of thin semiconductor films. Advanced Laser Technologies: International Symposium. Prague, Czech Republic. In: PUSTOVOY, Vladimir I., ed., Miroslav JELINEK, ed.. Second International Symposium on Advanced Laser Technologies. SPIE, 1994, pp. 2-15. SPIE Proceedings. 2332. Available under: doi: 10.1117/12.195876 | deu |
| kops.citation.iso690 | BONEBERG, Johannes, Johann NEDELCU, Ernst BUCHER, Paul LEIDERER, 1994. Laser-annealing of thin semiconductor films. Advanced Laser Technologies: International Symposium. Prague, Czech Republic. In: PUSTOVOY, Vladimir I., ed., Miroslav JELINEK, ed.. Second International Symposium on Advanced Laser Technologies. SPIE, 1994, pp. 2-15. SPIE Proceedings. 2332. Available under: doi: 10.1117/12.195876 | eng |
| kops.citation.rdf | <rdf:RDF
xmlns:dcterms="http://purl.org/dc/terms/"
xmlns:dc="http://purl.org/dc/elements/1.1/"
xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
xmlns:bibo="http://purl.org/ontology/bibo/"
xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
xmlns:foaf="http://xmlns.com/foaf/0.1/"
xmlns:void="http://rdfs.org/ns/void#"
xmlns:xsd="http://www.w3.org/2001/XMLSchema#" >
<rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/4948">
<dc:contributor>Nedelcu, Johann</dc:contributor>
<dc:creator>Nedelcu, Johann</dc:creator>
<dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T14:51:36Z</dcterms:available>
<dcterms:issued>1994-12-12</dcterms:issued>
<dc:contributor>Boneberg, Johannes</dc:contributor>
<dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/4948/1/145_procspie_1993.pdf"/>
<dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
<dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T14:51:36Z</dc:date>
<dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
<dc:contributor>Leiderer, Paul</dc:contributor>
<dc:contributor>Bucher, Ernst</dc:contributor>
<dc:language>eng</dc:language>
<foaf:homepage rdf:resource="http://localhost:8080/"/>
<bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/4948"/>
<dc:creator>Boneberg, Johannes</dc:creator>
<dc:rights>Attribution-NonCommercial-NoDerivs 2.0 Generic</dc:rights>
<void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
<dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/4948/1/145_procspie_1993.pdf"/>
<dc:creator>Leiderer, Paul</dc:creator>
<dc:format>application/pdf</dc:format>
<dcterms:abstract xml:lang="eng">Optical reflectivity and transmissivity measurements have been used to investigate the dynamics of melting and recrystallisation of thin films of Si and Ge after laser-annealing with a ns Nd:YAG-laser pulse. We report on temperature dependent changes of the reflectivity of the liquid phase above and below the melting point and on various nucleation and solidification scenarios in thin film, depending on the energy density of the amding laser.</dcterms:abstract>
<dc:creator>Bucher, Ernst</dc:creator>
<dcterms:bibliographicCitation>First publ. in: Second International Symposium on Advanced Laser Technologies, Proceedings of SPIE 2332 (1993), pp. 1-14</dcterms:bibliographicCitation>
<dcterms:rights rdf:resource="http://creativecommons.org/licenses/by-nc-nd/2.0/"/>
<dcterms:title>Laser-annealing of thin semiconductor films</dcterms:title>
</rdf:Description>
</rdf:RDF> | |
| kops.conferencefield | Advanced Laser Technologies: International Symposium, Prague, Czech Republic | deu |
| kops.description.openAccess | openaccessgreen | |
| kops.flag.knbibliography | false | |
| kops.identifier.nbn | urn:nbn:de:bsz:352-opus-30586 | deu |
| kops.location.conference | Prague, Czech Republic | |
| kops.opus.id | 3058 | deu |
| kops.sourcefield | PUSTOVOY, Vladimir I., ed., Miroslav JELINEK, ed.. <i>Second International Symposium on Advanced Laser Technologies</i>. SPIE, 1994, pp. 2-15. SPIE Proceedings. 2332. Available under: doi: 10.1117/12.195876 | deu |
| kops.sourcefield.plain | PUSTOVOY, Vladimir I., ed., Miroslav JELINEK, ed.. Second International Symposium on Advanced Laser Technologies. SPIE, 1994, pp. 2-15. SPIE Proceedings. 2332. Available under: doi: 10.1117/12.195876 | deu |
| kops.sourcefield.plain | PUSTOVOY, Vladimir I., ed., Miroslav JELINEK, ed.. Second International Symposium on Advanced Laser Technologies. SPIE, 1994, pp. 2-15. SPIE Proceedings. 2332. Available under: doi: 10.1117/12.195876 | eng |
| kops.title.conference | Advanced Laser Technologies: International Symposium | |
| relation.isAuthorOfPublication | 94343d79-ec61-438e-b4e2-9b4be92ebc6f | |
| relation.isAuthorOfPublication | fb75c4c7-06fc-421c-90ea-e662c05359d6 | |
| relation.isAuthorOfPublication | 611eb991-101f-4ad3-95e8-a31e03018c51 | |
| relation.isAuthorOfPublication.latestForDiscovery | 94343d79-ec61-438e-b4e2-9b4be92ebc6f | |
| source.bibliographicInfo.fromPage | 2 | |
| source.bibliographicInfo.seriesNumber | 2332 | |
| source.bibliographicInfo.toPage | 15 | |
| source.contributor.editor | Pustovoy, Vladimir I. | |
| source.contributor.editor | Jelinek, Miroslav | |
| source.publisher | SPIE | |
| source.relation.ispartofseries | SPIE Proceedings | |
| source.title | Second International Symposium on Advanced Laser Technologies |
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