Role of thermal SiO2 on passivation of highly doped layer
| dc.contributor.author | Dastgheib-Shirazi, Amir | |
| dc.contributor.author | Hahn, Giso | |
| dc.contributor.author | Terheiden, Barbara | |
| dc.date.accessioned | 2019-09-20T09:06:31Z | |
| dc.date.available | 2019-09-20T09:06:31Z | |
| dc.date.issued | 2019 | eng |
| dc.description.abstract | In this paper we investigate the influence of thermal oxidation during and after POCl3 diffusion. The main focus here is on the question of how far the presence of a thermally grown oxide layer has an influence on the emitter passivation. For this purpose, characterization methods such as electrochemical capacitance-voltage measurements and QSSPC are used. The novel finding of this paper is that in the case of a stack of passivation layers, the presence of the thermal oxide does not make a significant contribution to improved emitter passivation. | eng |
| dc.description.version | published | eng |
| dc.identifier.doi | 10.1063/1.5123862 | eng |
| dc.identifier.ppn | 1677391456 | |
| dc.identifier.uri | https://kops.uni-konstanz.de/handle/123456789/46996 | |
| dc.language.iso | eng | eng |
| dc.rights | terms-of-use | |
| dc.rights.uri | https://rightsstatements.org/page/InC/1.0/ | |
| dc.subject.ddc | 530 | eng |
| dc.title | Role of thermal SiO<sub>2</sub> on passivation of highly doped layer | eng |
| dc.type | INPROCEEDINGS | eng |
| dspace.entity.type | Publication | |
| kops.citation.bibtex | @inproceedings{DastgheibShirazi2019therm-46996,
year={2019},
doi={10.1063/1.5123862},
title={Role of thermal SiO<sub>2</sub> on passivation of highly doped layer},
number={2147, 1},
isbn={978-0-7354-1892-9},
publisher={AIP Publishing},
address={Melville, New York},
series={AIP Conference Proceedings},
booktitle={SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics : 8-10 April 2019, Leuven, Belgium},
editor={Poortmans, Jef},
author={Dastgheib-Shirazi, Amir and Hahn, Giso and Terheiden, Barbara},
note={Article Number: 070001}
} | |
| kops.citation.iso690 | DASTGHEIB-SHIRAZI, Amir, Giso HAHN, Barbara TERHEIDEN, 2019. Role of thermal SiO2 on passivation of highly doped layer. SiliconPV 2019 : The 9th International Conference on Crystalline Silicon Photovoltaics. Leuven, Belgium, 8. Apr. 2019 - 10. Apr. 2019. In: POORTMANS, Jef, ed. and others. SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics : 8-10 April 2019, Leuven, Belgium. Melville, New York: AIP Publishing, 2019, 070001. AIP Conference Proceedings. 2147, 1. eISSN 0094-243X. ISBN 978-0-7354-1892-9. Available under: doi: 10.1063/1.5123862 | deu |
| kops.citation.iso690 | DASTGHEIB-SHIRAZI, Amir, Giso HAHN, Barbara TERHEIDEN, 2019. Role of thermal SiO2 on passivation of highly doped layer. SiliconPV 2019 : The 9th International Conference on Crystalline Silicon Photovoltaics. Leuven, Belgium, Apr 8, 2019 - Apr 10, 2019. In: POORTMANS, Jef, ed. and others. SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics : 8-10 April 2019, Leuven, Belgium. Melville, New York: AIP Publishing, 2019, 070001. AIP Conference Proceedings. 2147, 1. eISSN 0094-243X. ISBN 978-0-7354-1892-9. Available under: doi: 10.1063/1.5123862 | eng |
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| kops.conferencefield | SiliconPV 2019 : The 9th International Conference on Crystalline Silicon Photovoltaics, 8. Apr. 2019 - 10. Apr. 2019, Leuven, Belgium | deu |
| kops.date.conferenceEnd | 2019-04-10 | eng |
| kops.date.conferenceStart | 2019-04-08 | eng |
| kops.description.openAccess | openaccessgreen | |
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| kops.location.conference | Leuven, Belgium | eng |
| kops.sourcefield | POORTMANS, Jef, ed. and others. <i>SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics : 8-10 April 2019, Leuven, Belgium</i>. Melville, New York: AIP Publishing, 2019, 070001. AIP Conference Proceedings. 2147, 1. eISSN 0094-243X. ISBN 978-0-7354-1892-9. Available under: doi: 10.1063/1.5123862 | deu |
| kops.sourcefield.plain | POORTMANS, Jef, ed. and others. SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics : 8-10 April 2019, Leuven, Belgium. Melville, New York: AIP Publishing, 2019, 070001. AIP Conference Proceedings. 2147, 1. eISSN 0094-243X. ISBN 978-0-7354-1892-9. Available under: doi: 10.1063/1.5123862 | deu |
| kops.sourcefield.plain | POORTMANS, Jef, ed. and others. SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics : 8-10 April 2019, Leuven, Belgium. Melville, New York: AIP Publishing, 2019, 070001. AIP Conference Proceedings. 2147, 1. eISSN 0094-243X. ISBN 978-0-7354-1892-9. Available under: doi: 10.1063/1.5123862 | eng |
| kops.title.conference | SiliconPV 2019 : The 9th International Conference on Crystalline Silicon Photovoltaics | eng |
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| source.bibliographicInfo.articleNumber | 070001 | eng |
| source.bibliographicInfo.seriesNumber | 2147, 1 | eng |
| source.contributor.editor | Poortmans, Jef | |
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| source.identifier.eissn | 0094-243X | eng |
| source.identifier.isbn | 978-0-7354-1892-9 | eng |
| source.publisher | AIP Publishing | eng |
| source.publisher.location | Melville, New York | eng |
| source.relation.ispartofseries | AIP Conference Proceedings | eng |
| source.title | SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics : 8-10 April 2019, Leuven, Belgium | eng |
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