Publikation:

Role of thermal SiO2 on passivation of highly doped layer

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2019

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http://nbn-resolving.de/urn:nbn:de:bsz:352-2-1bmrzjox3hif11
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https://doi.org/10.1063/1.5123862
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POORTMANS, Jef, ed. and others. SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics : 8-10 April 2019, Leuven, Belgium. Melville, New York: AIP Publishing, 2019, 070001. AIP Conference Proceedings. 2147, 1. eISSN 0094-243X. ISBN 978-0-7354-1892-9. Available under: doi: 10.1063/1.5123862

Zusammenfassung

In this paper we investigate the influence of thermal oxidation during and after POCl3 diffusion. The main focus here is on the question of how far the presence of a thermally grown oxide layer has an influence on the emitter passivation. For this purpose, characterization methods such as electrochemical capacitance-voltage measurements and QSSPC are used. The novel finding of this paper is that in the case of a stack of passivation layers, the presence of the thermal oxide does not make a significant contribution to improved emitter passivation.

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Fachgebiet (DDC)
530 Physik

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Konferenz

SiliconPV 2019 : The 9th International Conference on Crystalline Silicon Photovoltaics, 8. Apr. 2019 - 10. Apr. 2019, Leuven, Belgium
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ISO 690DASTGHEIB-SHIRAZI, Amir, Giso HAHN, Barbara TERHEIDEN, 2019. Role of thermal SiO2 on passivation of highly doped layer. SiliconPV 2019 : The 9th International Conference on Crystalline Silicon Photovoltaics. Leuven, Belgium, 8. Apr. 2019 - 10. Apr. 2019. In: POORTMANS, Jef, ed. and others. SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics : 8-10 April 2019, Leuven, Belgium. Melville, New York: AIP Publishing, 2019, 070001. AIP Conference Proceedings. 2147, 1. eISSN 0094-243X. ISBN 978-0-7354-1892-9. Available under: doi: 10.1063/1.5123862
BibTex
@inproceedings{DastgheibShirazi2019therm-46996,
  year={2019},
  doi={10.1063/1.5123862},
  title={Role of thermal SiO<sub>2</sub> on passivation of highly doped layer},
  number={2147, 1},
  isbn={978-0-7354-1892-9},
  publisher={AIP Publishing},
  address={Melville, New York},
  series={AIP Conference Proceedings},
  booktitle={SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics : 8-10 April 2019, Leuven, Belgium},
  editor={Poortmans, Jef},
  author={Dastgheib-Shirazi, Amir and Hahn, Giso and Terheiden, Barbara},
  note={Article Number: 070001}
}
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