Temperature dependent resistance of magnetic tunnel junctions as a quality proof of the barrier

Kurzanzeige
dc.contributor.authorRüdiger, Ulrich
dc.contributor.authorCalarco, Raffaelladeu
dc.contributor.authorMay, Ulrichdeu
dc.contributor.authorSamm, K.deu
dc.contributor.authorHauch, Jan O.deu
dc.contributor.authorKittur, Harishdeu
dc.contributor.authorSperlich, Martindeu
dc.contributor.authorGüntherodt, Gernotdeu
dc.date.accessioned2011-03-24T17:56:36Zdeu
dc.date.available2011-03-24T17:56:36Zdeu
dc.date.issued2001deu
dc.description.abstractTunnel junctions of Co(10 nm)/AlOx (nominally 2 nm)/Co(20 nm) have been prepared by molecular beam epitaxy applying a shadow mask technique in conjunction with an UV light-assisted oxidation process of the AlOx barrier. The quality of the AlOx barrier has been proven by x-ray photoelectron spectroscopy and temperature dependent tunneling magnetoresistance (TMR) measurements. Optimum-oxidized tunnel junctions show a TMR of 20% at 285 K and up to 36% at 100 K. At 285 K the TMR values as a function of oxidation time are not symmetric about the optimum time. For underoxidized junctions the TMR is reduced more strongly than for overoxidized junctions. The temperature dependence of the junction s resistance is a clear and reliable indicator whether pinholes (or imperfections)contribute to the conduction across the barrier.eng
dc.description.versionpublished
dc.format.mimetypeapplication/pdfdeu
dc.identifier.citationFirst publ. in: Journal of Applied Physics 89 (2001), 11, pp. 7573-7575deu
dc.identifier.doi10.1063/1.1361055
dc.identifier.ppn279097158deu
dc.identifier.urihttp://kops.uni-konstanz.de/handle/123456789/9445
dc.language.isoengdeu
dc.legacy.dateIssued2008deu
dc.rightsAttribution-NonCommercial-NoDerivs 2.0 Generic
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/
dc.subject.ddc530deu
dc.titleTemperature dependent resistance of magnetic tunnel junctions as a quality proof of the barriereng
dc.typeJOURNAL_ARTICLEdeu
dspace.entity.typePublication
kops.citation.bibtex
@article{Rudiger2001Tempe-9445,
  year={2001},
  doi={10.1063/1.1361055},
  title={Temperature dependent resistance of magnetic tunnel junctions as a quality proof of the barrier},
  number={11},
  volume={89},
  issn={0021-8979},
  journal={Journal of Applied Physics},
  pages={7573--7575},
  author={Rüdiger, Ulrich and Calarco, Raffaella and May, Ulrich and Samm, K. and Hauch, Jan O. and Kittur, Harish and Sperlich, Martin and Güntherodt, Gernot}
}
kops.citation.iso690RÜDIGER, Ulrich, Raffaella CALARCO, Ulrich MAY, K. SAMM, Jan O. HAUCH, Harish KITTUR, Martin SPERLICH, Gernot GÜNTHERODT, 2001. Temperature dependent resistance of magnetic tunnel junctions as a quality proof of the barrier. In: Journal of Applied Physics. 2001, 89(11), pp. 7573-7575. ISSN 0021-8979. eISSN 1089-7550. Available under: doi: 10.1063/1.1361055deu
kops.citation.iso690RÜDIGER, Ulrich, Raffaella CALARCO, Ulrich MAY, K. SAMM, Jan O. HAUCH, Harish KITTUR, Martin SPERLICH, Gernot GÜNTHERODT, 2001. Temperature dependent resistance of magnetic tunnel junctions as a quality proof of the barrier. In: Journal of Applied Physics. 2001, 89(11), pp. 7573-7575. ISSN 0021-8979. eISSN 1089-7550. Available under: doi: 10.1063/1.1361055eng
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