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Temperature dependent resistance of magnetic tunnel junctions as a quality proof of the barrier

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2001

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Calarco, Raffaella
May, Ulrich
Samm, K.
Hauch, Jan O.
Kittur, Harish
Sperlich, Martin
Güntherodt, Gernot

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Journal of Applied Physics. 2001, 89(11), pp. 7573-7575. ISSN 0021-8979. eISSN 1089-7550. Available under: doi: 10.1063/1.1361055

Zusammenfassung

Tunnel junctions of Co(10 nm)/AlOx (nominally 2 nm)/Co(20 nm) have been prepared by molecular beam epitaxy applying a shadow mask technique in conjunction with an UV light-assisted oxidation process of the AlOx barrier. The quality of the AlOx barrier has been proven by x-ray photoelectron spectroscopy and temperature dependent tunneling magnetoresistance (TMR) measurements. Optimum-oxidized tunnel junctions show a TMR of 20% at 285 K and up to 36% at 100 K. At 285 K the TMR values as a function of oxidation time are not symmetric about the optimum time. For underoxidized junctions the TMR is reduced more strongly than for overoxidized junctions. The temperature dependence of the junction s resistance is a clear and reliable indicator whether pinholes (or imperfections)contribute to the conduction across the barrier.

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ISO 690RÜDIGER, Ulrich, Raffaella CALARCO, Ulrich MAY, K. SAMM, Jan O. HAUCH, Harish KITTUR, Martin SPERLICH, Gernot GÜNTHERODT, 2001. Temperature dependent resistance of magnetic tunnel junctions as a quality proof of the barrier. In: Journal of Applied Physics. 2001, 89(11), pp. 7573-7575. ISSN 0021-8979. eISSN 1089-7550. Available under: doi: 10.1063/1.1361055
BibTex
@article{Rudiger2001Tempe-9445,
  year={2001},
  doi={10.1063/1.1361055},
  title={Temperature dependent resistance of magnetic tunnel junctions as a quality proof of the barrier},
  number={11},
  volume={89},
  issn={0021-8979},
  journal={Journal of Applied Physics},
  pages={7573--7575},
  author={Rüdiger, Ulrich and Calarco, Raffaella and May, Ulrich and Samm, K. and Hauch, Jan O. and Kittur, Harish and Sperlich, Martin and Güntherodt, Gernot}
}
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