Publikation: Temperature dependent resistance of magnetic tunnel junctions as a quality proof of the barrier
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Tunnel junctions of Co(10 nm)/AlOx (nominally 2 nm)/Co(20 nm) have been prepared by molecular beam epitaxy applying a shadow mask technique in conjunction with an UV light-assisted oxidation process of the AlOx barrier. The quality of the AlOx barrier has been proven by x-ray photoelectron spectroscopy and temperature dependent tunneling magnetoresistance (TMR) measurements. Optimum-oxidized tunnel junctions show a TMR of 20% at 285 K and up to 36% at 100 K. At 285 K the TMR values as a function of oxidation time are not symmetric about the optimum time. For underoxidized junctions the TMR is reduced more strongly than for overoxidized junctions. The temperature dependence of the junction s resistance is a clear and reliable indicator whether pinholes (or imperfections)contribute to the conduction across the barrier.
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RÜDIGER, Ulrich, Raffaella CALARCO, Ulrich MAY, K. SAMM, Jan O. HAUCH, Harish KITTUR, Martin SPERLICH, Gernot GÜNTHERODT, 2001. Temperature dependent resistance of magnetic tunnel junctions as a quality proof of the barrier. In: Journal of Applied Physics. 2001, 89(11), pp. 7573-7575. ISSN 0021-8979. eISSN 1089-7550. Available under: doi: 10.1063/1.1361055BibTex
@article{Rudiger2001Tempe-9445, year={2001}, doi={10.1063/1.1361055}, title={Temperature dependent resistance of magnetic tunnel junctions as a quality proof of the barrier}, number={11}, volume={89}, issn={0021-8979}, journal={Journal of Applied Physics}, pages={7573--7575}, author={Rüdiger, Ulrich and Calarco, Raffaella and May, Ulrich and Samm, K. and Hauch, Jan O. and Kittur, Harish and Sperlich, Martin and Güntherodt, Gernot} }
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