Ultrafast electron transport in layered semiconductors studied with femtosecond-laser photoemission

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dc.contributor.authorRettenberger, Armindeu
dc.contributor.authorLeiderer, Paul
dc.contributor.authorProbst, Matthiasdeu
dc.contributor.authorHaight, Richarddeu
dc.date.accessioned2011-03-24T17:54:03Zdeu
dc.date.available2011-03-24T17:54:03Zdeu
dc.date.issued1997deu
dc.description.abstractFemtosecond-laser photoemission was used to investigate the electron dynamics in the layered semiconductors MoSe2 and WSe2. Photoexcitation with 200-fs pulses of 2.03 eV light creates an electron gas with significant excess energy. Our measurements reveal a strong transient enhancement in the diffusive transport of the most energetic electrons relative to the conduction-band minimum. Additionally, we demonstrate that the surfaces of these layered chalcogenides are electronically passivated and we give an upper bound for the density of defect states within the band gap.eng
dc.description.versionpublished
dc.format.mimetypeapplication/pdfdeu
dc.identifier.citationFirst publ. in: Physical Review B 56 (1997), 19, pp. 12092-12095deu
dc.identifier.doi10.1103/PhysRevB.56.12092
dc.identifier.ppn265448891deu
dc.identifier.urihttp://kops.uni-konstanz.de/handle/123456789/9151
dc.language.isoengdeu
dc.legacy.dateIssued2007deu
dc.rightsAttribution-NonCommercial-NoDerivs 2.0 Generic
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/
dc.subject.ddc530deu
dc.titleUltrafast electron transport in layered semiconductors studied with femtosecond-laser photoemissioneng
dc.typeJOURNAL_ARTICLEdeu
dspace.entity.typePublication
kops.citation.bibtex
@article{Rettenberger1997Ultra-9151,
  year={1997},
  doi={10.1103/PhysRevB.56.12092},
  title={Ultrafast electron transport in layered semiconductors studied with femtosecond-laser photoemission},
  number={19},
  volume={56},
  journal={Physical Review B},
  pages={12092--12095},
  author={Rettenberger, Armin and Leiderer, Paul and Probst, Matthias and Haight, Richard}
}
kops.citation.iso690RETTENBERGER, Armin, Paul LEIDERER, Matthias PROBST, Richard HAIGHT, 1997. Ultrafast electron transport in layered semiconductors studied with femtosecond-laser photoemission. In: Physical Review B. 1997, 56(19), pp. 12092-12095. Available under: doi: 10.1103/PhysRevB.56.12092deu
kops.citation.iso690RETTENBERGER, Armin, Paul LEIDERER, Matthias PROBST, Richard HAIGHT, 1997. Ultrafast electron transport in layered semiconductors studied with femtosecond-laser photoemission. In: Physical Review B. 1997, 56(19), pp. 12092-12095. Available under: doi: 10.1103/PhysRevB.56.12092eng
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kops.sourcefield.plainPhysical Review B. 1997, 56(19), pp. 12092-12095. Available under: doi: 10.1103/PhysRevB.56.12092eng
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