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Ultrafast electron transport in layered semiconductors studied with femtosecond-laser photoemission

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206_physrevB_1997.pdf
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1997

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Rettenberger, Armin
Probst, Matthias
Haight, Richard

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Physical Review B. 1997, 56(19), pp. 12092-12095. Available under: doi: 10.1103/PhysRevB.56.12092

Zusammenfassung

Femtosecond-laser photoemission was used to investigate the electron dynamics in the layered semiconductors MoSe2 and WSe2. Photoexcitation with 200-fs pulses of 2.03 eV light creates an electron gas with significant excess energy. Our measurements reveal a strong transient enhancement in the diffusive transport of the most energetic electrons relative to the conduction-band minimum. Additionally, we demonstrate that the surfaces of these layered chalcogenides are electronically passivated and we give an upper bound for the density of defect states within the band gap.

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ISO 690RETTENBERGER, Armin, Paul LEIDERER, Matthias PROBST, Richard HAIGHT, 1997. Ultrafast electron transport in layered semiconductors studied with femtosecond-laser photoemission. In: Physical Review B. 1997, 56(19), pp. 12092-12095. Available under: doi: 10.1103/PhysRevB.56.12092
BibTex
@article{Rettenberger1997Ultra-9151,
  year={1997},
  doi={10.1103/PhysRevB.56.12092},
  title={Ultrafast electron transport in layered semiconductors studied with femtosecond-laser photoemission},
  number={19},
  volume={56},
  journal={Physical Review B},
  pages={12092--12095},
  author={Rettenberger, Armin and Leiderer, Paul and Probst, Matthias and Haight, Richard}
}
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