Concentration and penetration depth of H introduced into crystalline Si by hydrogenation methods used to fabricate solar cells

Kurzanzeige
dc.contributor.authorKleekajai, Suppawan
dc.contributor.authorJiang, Fan
dc.contributor.authorStavola, Michael
dc.contributor.authorYelundur, Vijay
dc.contributor.authorNakayashiki, Kenta
dc.contributor.authorRohatgi, Ajeet
dc.contributor.authorHahn, Giso
dc.contributor.authorSeren, Sven
dc.contributor.authorKalejs, Juris
dc.date.accessioned2018-04-27T13:20:03Z
dc.date.available2018-04-27T13:20:03Z
dc.date.issued2006eng
dc.description.abstractThe hydrogenation of crystalline Si by methods used to passivate defects in Si solar cells has been studied by infrared spectroscopy. For these experiments, floating-zone Si that contained Pt impurities that act as traps for H was used as a model system in which H could be directly detected. In this model system, the concentration and indiffusion depth of H were determined for different hydrogenation treatments so that their effectiveness could be compared. The postdeposition annealing of a hydrogen-rich SiNx surface layer was found to introduce H into the Si bulk with a concentration of ∼1015cm−3 under the best conditions investigated here.eng
dc.description.versionpublishedeng
dc.identifier.doi10.1063/1.2363684eng
dc.identifier.ppn502653701
dc.identifier.urihttps://kops.uni-konstanz.de/handle/123456789/42192
dc.language.isoengeng
dc.rightsterms-of-use
dc.rights.urihttps://rightsstatements.org/page/InC/1.0/
dc.subject.ddc530eng
dc.titleConcentration and penetration depth of H introduced into crystalline Si by hydrogenation methods used to fabricate solar cellseng
dc.typeJOURNAL_ARTICLEeng
dspace.entity.typePublication
kops.citation.bibtex
@article{Kleekajai2006Conce-42192,
  year={2006},
  doi={10.1063/1.2363684},
  title={Concentration and penetration depth of H introduced into crystalline Si by hydrogenation methods used to fabricate solar cells},
  number={9},
  volume={100},
  issn={0021-8979},
  journal={Journal of Applied Physics},
  author={Kleekajai, Suppawan and Jiang, Fan and Stavola, Michael and Yelundur, Vijay and Nakayashiki, Kenta and Rohatgi, Ajeet and Hahn, Giso and Seren, Sven and Kalejs, Juris},
  note={Article Number: 093517}
}
kops.citation.iso690KLEEKAJAI, Suppawan, Fan JIANG, Michael STAVOLA, Vijay YELUNDUR, Kenta NAKAYASHIKI, Ajeet ROHATGI, Giso HAHN, Sven SEREN, Juris KALEJS, 2006. Concentration and penetration depth of H introduced into crystalline Si by hydrogenation methods used to fabricate solar cells. In: Journal of Applied Physics. 2006, 100(9), 093517. ISSN 0021-8979. eISSN 1089-7550. Available under: doi: 10.1063/1.2363684deu
kops.citation.iso690KLEEKAJAI, Suppawan, Fan JIANG, Michael STAVOLA, Vijay YELUNDUR, Kenta NAKAYASHIKI, Ajeet ROHATGI, Giso HAHN, Sven SEREN, Juris KALEJS, 2006. Concentration and penetration depth of H introduced into crystalline Si by hydrogenation methods used to fabricate solar cells. In: Journal of Applied Physics. 2006, 100(9), 093517. ISSN 0021-8979. eISSN 1089-7550. Available under: doi: 10.1063/1.2363684eng
kops.citation.rdf
<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/42192">
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <dc:creator>Jiang, Fan</dc:creator>
    <dc:contributor>Kleekajai, Suppawan</dc:contributor>
    <dcterms:title>Concentration and penetration depth of H introduced into crystalline Si by hydrogenation methods used to fabricate solar cells</dcterms:title>
    <dc:contributor>Nakayashiki, Kenta</dc:contributor>
    <dc:creator>Kleekajai, Suppawan</dc:creator>
    <dc:creator>Seren, Sven</dc:creator>
    <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/42192/3/Kleekajai_2-1y0qanafcse506.pdf"/>
    <dc:creator>Yelundur, Vijay</dc:creator>
    <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/42192/3/Kleekajai_2-1y0qanafcse506.pdf"/>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:contributor>Jiang, Fan</dc:contributor>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dcterms:issued>2006</dcterms:issued>
    <dc:contributor>Rohatgi, Ajeet</dc:contributor>
    <dc:rights>terms-of-use</dc:rights>
    <dc:creator>Kalejs, Juris</dc:creator>
    <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/42192"/>
    <dc:contributor>Stavola, Michael</dc:contributor>
    <dc:creator>Rohatgi, Ajeet</dc:creator>
    <dc:contributor>Kalejs, Juris</dc:contributor>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2018-04-27T13:20:03Z</dc:date>
    <dc:contributor>Yelundur, Vijay</dc:contributor>
    <dcterms:rights rdf:resource="https://rightsstatements.org/page/InC/1.0/"/>
    <dc:creator>Nakayashiki, Kenta</dc:creator>
    <dc:creator>Hahn, Giso</dc:creator>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2018-04-27T13:20:03Z</dcterms:available>
    <dc:language>eng</dc:language>
    <dc:contributor>Seren, Sven</dc:contributor>
    <dc:creator>Stavola, Michael</dc:creator>
    <dcterms:abstract xml:lang="eng">The hydrogenation of crystalline Si by methods used to passivate defects in Si solar cells has been studied by infrared spectroscopy. For these experiments, floating-zone Si that contained Pt impurities that act as traps for H was used as a model system in which H could be directly detected. In this model system, the concentration and indiffusion depth of H were determined for different hydrogenation treatments so that their effectiveness could be compared. The postdeposition annealing of a hydrogen-rich SiN&lt;sub&gt;x&lt;/sub&gt; surface layer was found to introduce H into the Si bulk with a concentration of ∼10&lt;sup&gt;15&lt;/sup&gt;cm&lt;sup&gt;−3&lt;/sup&gt; under the best conditions investigated here.</dcterms:abstract>
    <dc:contributor>Hahn, Giso</dc:contributor>
  </rdf:Description>
</rdf:RDF>
kops.description.openAccessopenaccessgreen
kops.flag.knbibliographytrue
kops.identifier.nbnurn:nbn:de:bsz:352-2-1y0qanafcse506
kops.sourcefieldJournal of Applied Physics. 2006, <b>100</b>(9), 093517. ISSN 0021-8979. eISSN 1089-7550. Available under: doi: 10.1063/1.2363684deu
kops.sourcefield.plainJournal of Applied Physics. 2006, 100(9), 093517. ISSN 0021-8979. eISSN 1089-7550. Available under: doi: 10.1063/1.2363684deu
kops.sourcefield.plainJournal of Applied Physics. 2006, 100(9), 093517. ISSN 0021-8979. eISSN 1089-7550. Available under: doi: 10.1063/1.2363684eng
relation.isAuthorOfPublicatione82405a2-e86b-44d7-8126-8cfdd7e627c9
relation.isAuthorOfPublicationcbad86fe-fb31-47e4-8fb3-96c6a3602101
relation.isAuthorOfPublication.latestForDiscoverye82405a2-e86b-44d7-8126-8cfdd7e627c9
source.bibliographicInfo.articleNumber093517eng
source.bibliographicInfo.issue9eng
source.bibliographicInfo.volume100eng
source.identifier.eissn1089-7550eng
source.identifier.issn0021-8979eng
source.periodicalTitleJournal of Applied Physicseng

Dateien

Originalbündel

Gerade angezeigt 1 - 1 von 1
Vorschaubild nicht verfügbar
Name:
Kleekajai_2-1y0qanafcse506.pdf
Größe:
197.69 KB
Format:
Adobe Portable Document Format
Beschreibung:
Kleekajai_2-1y0qanafcse506.pdf
Kleekajai_2-1y0qanafcse506.pdfGröße: 197.69 KBDownloads: 704

Lizenzbündel

Gerade angezeigt 1 - 1 von 1
Vorschaubild nicht verfügbar
Name:
license.txt
Größe:
3.88 KB
Format:
Item-specific license agreed upon to submission
Beschreibung:
license.txt
license.txtGröße: 3.88 KBDownloads: 0

Sammlungen

Physik: Publikationen