Publikation: Concentration and penetration depth of H introduced into crystalline Si by hydrogenation methods used to fabricate solar cells
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2006
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Kleekajai, Suppawan
Jiang, Fan
Stavola, Michael
Yelundur, Vijay
Nakayashiki, Kenta
Rohatgi, Ajeet
Kalejs, Juris
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Journal of Applied Physics. 2006, 100(9), 093517. ISSN 0021-8979. eISSN 1089-7550. Available under: doi: 10.1063/1.2363684
Zusammenfassung
The hydrogenation of crystalline Si by methods used to passivate defects in Si solar cells has been studied by infrared spectroscopy. For these experiments, floating-zone Si that contained Pt impurities that act as traps for H was used as a model system in which H could be directly detected. In this model system, the concentration and indiffusion depth of H were determined for different hydrogenation treatments so that their effectiveness could be compared. The postdeposition annealing of a hydrogen-rich SiNx surface layer was found to introduce H into the Si bulk with a concentration of ∼1015cm−3 under the best conditions investigated here.
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KLEEKAJAI, Suppawan, Fan JIANG, Michael STAVOLA, Vijay YELUNDUR, Kenta NAKAYASHIKI, Ajeet ROHATGI, Giso HAHN, Sven SEREN, Juris KALEJS, 2006. Concentration and penetration depth of H introduced into crystalline Si by hydrogenation methods used to fabricate solar cells. In: Journal of Applied Physics. 2006, 100(9), 093517. ISSN 0021-8979. eISSN 1089-7550. Available under: doi: 10.1063/1.2363684BibTex
@article{Kleekajai2006Conce-42192,
year={2006},
doi={10.1063/1.2363684},
title={Concentration and penetration depth of H introduced into crystalline Si by hydrogenation methods used to fabricate solar cells},
number={9},
volume={100},
issn={0021-8979},
journal={Journal of Applied Physics},
author={Kleekajai, Suppawan and Jiang, Fan and Stavola, Michael and Yelundur, Vijay and Nakayashiki, Kenta and Rohatgi, Ajeet and Hahn, Giso and Seren, Sven and Kalejs, Juris},
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<dcterms:abstract xml:lang="eng">The hydrogenation of crystalline Si by methods used to passivate defects in Si solar cells has been studied by infrared spectroscopy. For these experiments, floating-zone Si that contained Pt impurities that act as traps for H was used as a model system in which H could be directly detected. In this model system, the concentration and indiffusion depth of H were determined for different hydrogenation treatments so that their effectiveness could be compared. The postdeposition annealing of a hydrogen-rich SiN<sub>x</sub> surface layer was found to introduce H into the Si bulk with a concentration of ∼10<sup>15</sup>cm<sup>−3</sup> under the best conditions investigated here.</dcterms:abstract>
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