N‐Type Behavior from a P‐Type Dopant : Charge Compensation Mechanisms in Trivalent Y‐Doped HfO2

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dc.contributor.authorRehm, Oliver
dc.contributor.authorBaumgarten, Lutz
dc.contributor.authorWunderwald, Florian
dc.contributor.authorFuhrberg, Andreas
dc.contributor.authorDüring, Pia Maria
dc.contributor.authorGloskovskii, Andrei
dc.contributor.authorSchlueter, Christoph
dc.contributor.authorMikolajick, Thomas
dc.contributor.authorSchroeder, Uwe
dc.contributor.authorMüller, Martina
dc.date.accessioned2026-01-29T11:32:46Z
dc.date.available2026-01-29T11:32:46Z
dc.date.issued2025-12-07
dc.description.abstractThe current market launch of HfO2 ‐based ferroelectric devices relies on the control of the inherent oxygen vacancies (OVs) and their impact on the ferroelectric performance. Due to the necessary stabilization of the ferroelectric phase by doping, several dopants are investigated for their applicability to control the vacancy concentration. Hf 3+ signatures in X‐ray photoemission spectra are often used as an indication of OVs for both qualitative and quantitative analysis. The analysis of Y doped HfO2 (Y:HfO2) as investigated by hard x‐ray photoelectron spectroscopy (HAXPES) reveals the inapplicability of the Hf 3+ signature for a quantitative determination of OVs in the case of heterovalent doping and is restricted to pure HfO2 or isoelectronic substitution of Hf by, for example, Zr.
dc.description.versionpublisheddeu
dc.identifier.doi10.1002/apxr.202500120
dc.identifier.ppn1962995267
dc.identifier.urihttps://kops.uni-konstanz.de/handle/123456789/75984
dc.language.isoeng
dc.rightsAttribution 4.0 International
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.subject.ddc530
dc.titleN‐Type Behavior from a P‐Type Dopant : Charge Compensation Mechanisms in Trivalent Y‐Doped HfO<sub>2</sub>eng
dc.typeJOURNAL_ARTICLE
dspace.entity.typePublication
kops.citation.bibtex
@article{Rehm2025-12-07NType-75984,
  title={N‐Type Behavior from a P‐Type Dopant : Charge Compensation Mechanisms in Trivalent Y‐Doped HfO<sub>2</sub>},
  year={2025},
  doi={10.1002/apxr.202500120},
  number={1},
  volume={5},
  journal={Advanced Physics Research},
  author={Rehm, Oliver and Baumgarten, Lutz and Wunderwald, Florian and Fuhrberg, Andreas and Düring, Pia Maria and Gloskovskii, Andrei and Schlueter, Christoph and Mikolajick, Thomas and Schroeder, Uwe and Müller, Martina},
  note={Article Number: e00120}
}
kops.citation.iso690REHM, Oliver, Lutz BAUMGARTEN, Florian WUNDERWALD, Andreas FUHRBERG, Pia Maria DÜRING, Andrei GLOSKOVSKII, Christoph SCHLUETER, Thomas MIKOLAJICK, Uwe SCHROEDER, Martina MÜLLER, 2025. N‐Type Behavior from a P‐Type Dopant : Charge Compensation Mechanisms in Trivalent Y‐Doped HfO2. In: Advanced Physics Research. Wiley. 2025, 5(1), e00120. eISSN 2751-1200. Verfügbar unter: doi: 10.1002/apxr.202500120deu
kops.citation.iso690REHM, Oliver, Lutz BAUMGARTEN, Florian WUNDERWALD, Andreas FUHRBERG, Pia Maria DÜRING, Andrei GLOSKOVSKII, Christoph SCHLUETER, Thomas MIKOLAJICK, Uwe SCHROEDER, Martina MÜLLER, 2025. N‐Type Behavior from a P‐Type Dopant : Charge Compensation Mechanisms in Trivalent Y‐Doped HfO2. In: Advanced Physics Research. Wiley. 2025, 5(1), e00120. eISSN 2751-1200. Available under: doi: 10.1002/apxr.202500120eng
kops.citation.rdf
<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/75984">
    <dcterms:abstract>The current market launch of HfO&lt;sub&gt;2&lt;/sub&gt; ‐based ferroelectric devices relies on the control of the inherent oxygen vacancies (OVs) and their impact on the ferroelectric performance. Due to the necessary stabilization of the ferroelectric phase by doping, several dopants are investigated for their applicability to control the vacancy concentration. Hf &lt;sup&gt;3+&lt;/sup&gt; signatures in X‐ray photoemission spectra are often used as an indication of OVs for both qualitative and quantitative analysis. The analysis of Y doped HfO&lt;sub&gt;2&lt;/sub&gt; (Y:HfO&lt;sub&gt;2&lt;/sub&gt;) as investigated by hard x‐ray photoelectron spectroscopy (HAXPES) reveals the inapplicability of the Hf &lt;sup&gt;3+&lt;/sup&gt; signature for a quantitative determination of OVs in the case of heterovalent doping and is restricted to pure HfO&lt;sub&gt;2&lt;/sub&gt; or isoelectronic substitution of Hf by, for example, Zr.</dcterms:abstract>
    <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/75984/1/Rehm_2-1uxsfez8g90dw8.pdf"/>
    <dc:creator>Müller, Martina</dc:creator>
    <dc:creator>Baumgarten, Lutz</dc:creator>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2026-01-29T11:32:46Z</dc:date>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/75984/1/Rehm_2-1uxsfez8g90dw8.pdf"/>
    <dc:contributor>Schlueter, Christoph</dc:contributor>
    <dc:contributor>Rehm, Oliver</dc:contributor>
    <dc:creator>Schlueter, Christoph</dc:creator>
    <dc:contributor>Gloskovskii, Andrei</dc:contributor>
    <dc:contributor>Düring, Pia Maria</dc:contributor>
    <dc:creator>Mikolajick, Thomas</dc:creator>
    <dc:contributor>Mikolajick, Thomas</dc:contributor>
    <dcterms:issued>2025-12-07</dcterms:issued>
    <dc:creator>Schroeder, Uwe</dc:creator>
    <dcterms:rights rdf:resource="http://creativecommons.org/licenses/by/4.0/"/>
    <dc:rights>Attribution 4.0 International</dc:rights>
    <dc:creator>Düring, Pia Maria</dc:creator>
    <dc:creator>Gloskovskii, Andrei</dc:creator>
    <dc:contributor>Wunderwald, Florian</dc:contributor>
    <dc:contributor>Schroeder, Uwe</dc:contributor>
    <dc:contributor>Baumgarten, Lutz</dc:contributor>
    <dc:language>eng</dc:language>
    <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/75984"/>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:creator>Fuhrberg, Andreas</dc:creator>
    <dc:contributor>Müller, Martina</dc:contributor>
    <dc:contributor>Fuhrberg, Andreas</dc:contributor>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <dc:creator>Wunderwald, Florian</dc:creator>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2026-01-29T11:32:46Z</dcterms:available>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dcterms:title>N‐Type Behavior from a P‐Type Dopant : Charge Compensation Mechanisms in Trivalent Y‐Doped HfO&lt;sub&gt;2&lt;/sub&gt;</dcterms:title>
    <dc:creator>Rehm, Oliver</dc:creator>
  </rdf:Description>
</rdf:RDF>
kops.description.funding{"second":"05K22VL1","first":"brd"}
kops.description.funding{"second":"05KS7UM1","first":"brd"}
kops.description.funding{"second":"05K10UMA","first":"brd"}
kops.description.funding{"second":"05KS7WW3","first":"brd"}
kops.description.funding{"second":"05K10WW1","first":"brd"}
kops.description.funding{"second":"05K13WW1","first":"brd"}
kops.description.funding{"first":"dfg","second":"SFB 1432, 425217212, A07"}
kops.description.openAccessopenaccessgold
kops.flag.isPeerReviewedunknown
kops.flag.knbibliographytrue
kops.identifier.nbnurn:nbn:de:bsz:352-2-1uxsfez8g90dw8
kops.sourcefieldAdvanced Physics Research. Wiley. 2025, <b>5</b>(1), e00120. eISSN 2751-1200. Verfügbar unter: doi: 10.1002/apxr.202500120deu
kops.sourcefield.plainAdvanced Physics Research. Wiley. 2025, 5(1), e00120. eISSN 2751-1200. Verfügbar unter: doi: 10.1002/apxr.202500120deu
kops.sourcefield.plainAdvanced Physics Research. Wiley. 2025, 5(1), e00120. eISSN 2751-1200. Available under: doi: 10.1002/apxr.202500120eng
relation.isAuthorOfPublication3e558266-d7eb-4453-a8cb-48e262758d67
relation.isAuthorOfPublication029dddd2-f612-4d06-970b-68c67536b1e1
relation.isAuthorOfPublication686f2372-a9df-4ad6-b26f-82dd1b9b37c2
relation.isAuthorOfPublication.latestForDiscovery3e558266-d7eb-4453-a8cb-48e262758d67
source.bibliographicInfo.articleNumbere00120
source.bibliographicInfo.issue1
source.bibliographicInfo.volume5
source.identifier.eissn2751-1200
source.periodicalTitleAdvanced Physics Research
source.publisherWiley

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