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N‐Type Behavior from a P‐Type Dopant : Charge Compensation Mechanisms in Trivalent Y‐Doped HfO2

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2025

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Baumgarten, Lutz
Wunderwald, Florian
Fuhrberg, Andreas
Gloskovskii, Andrei
Schlueter, Christoph
Mikolajick, Thomas
Schroeder, Uwe

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http://nbn-resolving.de/urn:nbn:de:bsz:352-2-1uxsfez8g90dw8
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https://doi.org/10.1002/apxr.202500120
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CC BY 4.0

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Institutionen der Bundesrepublik Deutschland: 05K22VL1
Institutionen der Bundesrepublik Deutschland: 05KS7UM1
Institutionen der Bundesrepublik Deutschland: 05K10UMA
Institutionen der Bundesrepublik Deutschland: 05KS7WW3
Institutionen der Bundesrepublik Deutschland: 05K10WW1
Institutionen der Bundesrepublik Deutschland: 05K13WW1
Deutsche Forschungsgemeinschaft (DFG): SFB 1432, 425217212, A07

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Advanced Physics Research. Wiley. 2025, 5(1), e00120. eISSN 2751-1200. Verfügbar unter: doi: 10.1002/apxr.202500120

Zusammenfassung

The current market launch of HfO2 ‐based ferroelectric devices relies on the control of the inherent oxygen vacancies (OVs) and their impact on the ferroelectric performance. Due to the necessary stabilization of the ferroelectric phase by doping, several dopants are investigated for their applicability to control the vacancy concentration. Hf 3+ signatures in X‐ray photoemission spectra are often used as an indication of OVs for both qualitative and quantitative analysis. The analysis of Y doped HfO2 (Y:HfO2) as investigated by hard x‐ray photoelectron spectroscopy (HAXPES) reveals the inapplicability of the Hf 3+ signature for a quantitative determination of OVs in the case of heterovalent doping and is restricted to pure HfO2 or isoelectronic substitution of Hf by, for example, Zr.

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ISO 690REHM, Oliver, Lutz BAUMGARTEN, Florian WUNDERWALD, Andreas FUHRBERG, Pia Maria DÜRING, Andrei GLOSKOVSKII, Christoph SCHLUETER, Thomas MIKOLAJICK, Uwe SCHROEDER, Martina MÜLLER, 2025. N‐Type Behavior from a P‐Type Dopant : Charge Compensation Mechanisms in Trivalent Y‐Doped HfO2. In: Advanced Physics Research. Wiley. 2025, 5(1), e00120. eISSN 2751-1200. Verfügbar unter: doi: 10.1002/apxr.202500120
BibTex
@article{Rehm2025-12-07NType-75984,
  title={N‐Type Behavior from a P‐Type Dopant : Charge Compensation Mechanisms in Trivalent Y‐Doped HfO<sub>2</sub>},
  year={2025},
  doi={10.1002/apxr.202500120},
  number={1},
  volume={5},
  journal={Advanced Physics Research},
  author={Rehm, Oliver and Baumgarten, Lutz and Wunderwald, Florian and Fuhrberg, Andreas and Düring, Pia Maria and Gloskovskii, Andrei and Schlueter, Christoph and Mikolajick, Thomas and Schroeder, Uwe and Müller, Martina},
  note={Article Number: e00120}
}
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