Effects of process conditions for the n+-emitter formation in crystalline silicon

Kurzanzeige
dc.contributor.authorDastgheib-Shirazi, Amir
dc.contributor.authorSteyer, Michael
dc.contributor.authorMicard, Gabriel
dc.contributor.authorWagner, Hannesdeu
dc.contributor.authorAltermatt, Pietrodeu
dc.contributor.authorHahn, Giso
dc.date.accessioned2013-03-28T12:56:37Zdeu
dc.date.available2013-03-28T12:56:37Zdeu
dc.date.issued2012-06
dc.description.abstractNowadays new solar cell concepts are continually attracting the attention of the PV industry. Thereby emitter structures and the application of high performance emitters like the homogeneous and etched-back emitter on crystalline p- and n-type silicon solar cells continue to be very popular [1]-[4]. In this work we study the influence of process parameters on the phosphosilicate glass layer characteristics during the predeposition of a POCl3 diffusion process. The quantitative analysis of the highly doped layer gives a deeper understanding of the phosphorus diffusion process for industrial emitter structures.eng
dc.description.versionpublished
dc.identifier.citation38th IEEE Photovoltaic Specialists Conference (PVSC) 2012 : Austin, Texas, USA, 3 - 8 June 2012 / [IEEE Electron Devices Society]. - Piscataway, NJ : IEEE, 2012. - S. 1584-1589. - ISBN 978-1-467-30064-3deu
dc.identifier.doi10.1109/PVSC.2012.6317897deu
dc.identifier.ppn506776832
dc.identifier.urihttp://kops.uni-konstanz.de/handle/123456789/22495
dc.language.isoengdeu
dc.legacy.dateIssued2013-03-28deu
dc.rightsterms-of-use
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dc.subject.ddc530deu
dc.titleEffects of process conditions for the n<sup>+</sup>-emitter formation in crystalline siliconeng
dc.typeINPROCEEDINGSdeu
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kops.citation.bibtex
@inproceedings{DastgheibShirazi2012-06Effec-22495,
  year={2012},
  doi={10.1109/PVSC.2012.6317897},
  title={Effects of process conditions for the n<sup>+</sup>-emitter formation in crystalline silicon},
  isbn={978-1-4673-0064-3},
  publisher={IEEE},
  booktitle={2012 38th IEEE Photovoltaic Specialists Conference},
  pages={001584--001589},
  author={Dastgheib-Shirazi, Amir and Steyer, Michael and Micard, Gabriel and Wagner, Hannes and Altermatt, Pietro and Hahn, Giso}
}
kops.citation.iso690DASTGHEIB-SHIRAZI, Amir, Michael STEYER, Gabriel MICARD, Hannes WAGNER, Pietro ALTERMATT, Giso HAHN, 2012. Effects of process conditions for the n+-emitter formation in crystalline silicon. 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC). Austin, TX, USA, 3. Juni 2012 - 8. Juni 2012. In: 2012 38th IEEE Photovoltaic Specialists Conference. IEEE, 2012, pp. 001584-001589. ISBN 978-1-4673-0064-3. Available under: doi: 10.1109/PVSC.2012.6317897deu
kops.citation.iso690DASTGHEIB-SHIRAZI, Amir, Michael STEYER, Gabriel MICARD, Hannes WAGNER, Pietro ALTERMATT, Giso HAHN, 2012. Effects of process conditions for the n+-emitter formation in crystalline silicon. 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC). Austin, TX, USA, Jun 3, 2012 - Jun 8, 2012. In: 2012 38th IEEE Photovoltaic Specialists Conference. IEEE, 2012, pp. 001584-001589. ISBN 978-1-4673-0064-3. Available under: doi: 10.1109/PVSC.2012.6317897eng
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kops.conferencefield2012 IEEE 38th Photovoltaic Specialists Conference (PVSC), 3. Juni 2012 - 8. Juni 2012, Austin, TX, USAdeu
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kops.sourcefield.plain2012 38th IEEE Photovoltaic Specialists Conference. IEEE, 2012, pp. 001584-001589. ISBN 978-1-4673-0064-3. Available under: doi: 10.1109/PVSC.2012.6317897eng
kops.submitter.emailsabine.gross-buitenwerf@uni-konstanz.dedeu
kops.title.conference2012 IEEE 38th Photovoltaic Specialists Conference (PVSC)
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