Publikation:

Effects of process conditions for the n+-emitter formation in crystalline silicon

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Dastgheib-Shirazi_224955.pdf
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2012

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Wagner, Hannes
Altermatt, Pietro

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http://nbn-resolving.de/urn:nbn:de:bsz:352-224955
DOI (zitierfähiger Link)
https://doi.org/10.1109/PVSC.2012.6317897
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2012 38th IEEE Photovoltaic Specialists Conference. IEEE, 2012, pp. 001584-001589. ISBN 978-1-4673-0064-3. Available under: doi: 10.1109/PVSC.2012.6317897

Zusammenfassung

Nowadays new solar cell concepts are continually attracting the attention of the PV industry. Thereby emitter structures and the application of high performance emitters like the homogeneous and etched-back emitter on crystalline p- and n-type silicon solar cells continue to be very popular [1]-[4]. In this work we study the influence of process parameters on the phosphosilicate glass layer characteristics during the predeposition of a POCl3 diffusion process. The quantitative analysis of the highly doped layer gives a deeper understanding of the phosphorus diffusion process for industrial emitter structures.

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530 Physik

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2012 IEEE 38th Photovoltaic Specialists Conference (PVSC), 3. Juni 2012 - 8. Juni 2012, Austin, TX, USA
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ISO 690DASTGHEIB-SHIRAZI, Amir, Michael STEYER, Gabriel MICARD, Hannes WAGNER, Pietro ALTERMATT, Giso HAHN, 2012. Effects of process conditions for the n+-emitter formation in crystalline silicon. 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC). Austin, TX, USA, 3. Juni 2012 - 8. Juni 2012. In: 2012 38th IEEE Photovoltaic Specialists Conference. IEEE, 2012, pp. 001584-001589. ISBN 978-1-4673-0064-3. Available under: doi: 10.1109/PVSC.2012.6317897
BibTex
@inproceedings{DastgheibShirazi2012-06Effec-22495,
  year={2012},
  doi={10.1109/PVSC.2012.6317897},
  title={Effects of process conditions for the n<sup>+</sup>-emitter formation in crystalline silicon},
  isbn={978-1-4673-0064-3},
  publisher={IEEE},
  booktitle={2012 38th IEEE Photovoltaic Specialists Conference},
  pages={001584--001589},
  author={Dastgheib-Shirazi, Amir and Steyer, Michael and Micard, Gabriel and Wagner, Hannes and Altermatt, Pietro and Hahn, Giso}
}
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