Electronic Structure Engineering in ZnSe/CdS Type-II Nanoparticles by Interface Alloying

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dc.contributor.authorBoldt, Klaus
dc.contributor.authorSchwarz, Kyra N.
dc.contributor.authorKirkwood, Nicholas
dc.contributor.authorSmith, Trevor A.
dc.contributor.authorMulvaney, Paul
dc.date.accessioned2018-12-11T13:56:19Z
dc.date.available2018-12-11T13:56:19Z
dc.date.issued2014-06-19eng
dc.description.abstractWe report the synthesis and characterization of type-II ZnSe/CdS semiconductor nanocrystals that exhibit strong charge separation, high photoluminescence quantum yields, low optical gain thresholds, and alloyed core–shell interfaces. Shell growth rates and the degree of alloying both depend strongly on the shelling temperature. The core–shell NCs exhibit band edge PL with emission wavelengths spanning the blue to orange region of the electromagnetic spectrum (380–562 nm). Fluorescence quantum yields up to 75% can be obtained by deposition of an additional ZnS layer. Transient absorption spectroscopy reveals that the population of the first two exciton states (1Se–1Sh, 1Se–2Sh) in the type-II structures can be controlled by alloying. Increased alloying leads to a greater population of the 2S hole state exciton.eng
dc.description.versionpublishedeng
dc.identifier.doi10.1021/jp503609feng
dc.identifier.urihttps://kops.uni-konstanz.de/handle/123456789/44276
dc.language.isoengeng
dc.subject.ddc540eng
dc.titleElectronic Structure Engineering in ZnSe/CdS Type-II Nanoparticles by Interface Alloyingeng
dc.typeJOURNAL_ARTICLEeng
dspace.entity.typePublication
kops.citation.bibtex
@article{Boldt2014-06-19Elect-44276,
  year={2014},
  doi={10.1021/jp503609f},
  title={Electronic Structure Engineering in ZnSe/CdS Type-II Nanoparticles by Interface Alloying},
  number={24},
  volume={118},
  issn={1932-7447},
  journal={The Journal of Physical Chemistry C},
  pages={13276--13284},
  author={Boldt, Klaus and Schwarz, Kyra N. and Kirkwood, Nicholas and Smith, Trevor A. and Mulvaney, Paul}
}
kops.citation.iso690BOLDT, Klaus, Kyra N. SCHWARZ, Nicholas KIRKWOOD, Trevor A. SMITH, Paul MULVANEY, 2014. Electronic Structure Engineering in ZnSe/CdS Type-II Nanoparticles by Interface Alloying. In: The Journal of Physical Chemistry C. 2014, 118(24), pp. 13276-13284. ISSN 1932-7447. eISSN 1932-7455. Available under: doi: 10.1021/jp503609fdeu
kops.citation.iso690BOLDT, Klaus, Kyra N. SCHWARZ, Nicholas KIRKWOOD, Trevor A. SMITH, Paul MULVANEY, 2014. Electronic Structure Engineering in ZnSe/CdS Type-II Nanoparticles by Interface Alloying. In: The Journal of Physical Chemistry C. 2014, 118(24), pp. 13276-13284. ISSN 1932-7447. eISSN 1932-7455. Available under: doi: 10.1021/jp503609feng
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    <dcterms:abstract xml:lang="eng">We report the synthesis and characterization of type-II ZnSe/CdS semiconductor nanocrystals that exhibit strong charge separation, high photoluminescence quantum yields, low optical gain thresholds, and alloyed core–shell interfaces. Shell growth rates and the degree of alloying both depend strongly on the shelling temperature. The core–shell NCs exhibit band edge PL with emission wavelengths spanning the blue to orange region of the electromagnetic spectrum (380–562 nm). Fluorescence quantum yields up to 75% can be obtained by deposition of an additional ZnS layer. Transient absorption spectroscopy reveals that the population of the first two exciton states (1S&lt;sub&gt;e&lt;/sub&gt;–1S&lt;sub&gt;h&lt;/sub&gt;, 1S&lt;sub&gt;e&lt;/sub&gt;–2S&lt;sub&gt;h&lt;/sub&gt;) in the type-II structures can be controlled by alloying. Increased alloying leads to a greater population of the 2S hole state exciton.</dcterms:abstract>
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kops.sourcefieldThe Journal of Physical Chemistry C. 2014, <b>118</b>(24), pp. 13276-13284. ISSN 1932-7447. eISSN 1932-7455. Available under: doi: 10.1021/jp503609fdeu
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