Electronic Structure Engineering in ZnSe/CdS Type-II Nanoparticles by Interface Alloying

Boldt, Klaus; Schwarz, Kyra N.; Kirkwood, Nicholas; Smith, Trevor A.; Mulvaney, Paul

Electronic Structure Engineering in ZnSe/CdS Type-II Nanoparticles by Interface Alloying

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Datum

2014

Autor:innen

Boldt, Klaus

Schwarz, Kyra N.

Kirkwood, Nicholas

Smith, Trevor A.

Mulvaney, Paul

DOI (zitierfähiger Link)

https://doi.org/10.1021/jp503609f

Sammlungen

Chemie

Publikationstyp

Zeitschriftenartikel

Publikationsstatus

Published

Erschienen in

The Journal of Physical Chemistry C. 2014, 118(24), pp. 13276-13284. ISSN 1932-7447. eISSN 1932-7455. Available under: doi: 10.1021/jp503609f

Zusammenfassung

We report the synthesis and characterization of type-II ZnSe/CdS semiconductor nanocrystals that exhibit strong charge separation, high photoluminescence quantum yields, low optical gain thresholds, and alloyed core–shell interfaces. Shell growth rates and the degree of alloying both depend strongly on the shelling temperature. The core–shell NCs exhibit band edge PL with emission wavelengths spanning the blue to orange region of the electromagnetic spectrum (380–562 nm). Fluorescence quantum yields up to 75% can be obtained by deposition of an additional ZnS layer. Transient absorption spectroscopy reveals that the population of the first two exciton states (1S_e–1S_h, 1S_e–2S_h) in the type-II structures can be controlled by alloying. Increased alloying leads to a greater population of the 2S hole state exciton.

Fachgebiet (DDC)

540 Chemie

Zitieren

ISO 690

BOLDT, Klaus, Kyra N. SCHWARZ, Nicholas KIRKWOOD, Trevor A. SMITH, Paul MULVANEY, 2014. Electronic Structure Engineering in ZnSe/CdS Type-II Nanoparticles by Interface Alloying. In: The Journal of Physical Chemistry C. 2014, 118(24), pp. 13276-13284. ISSN 1932-7447. eISSN 1932-7455. Available under: doi: 10.1021/jp503609f

BibTex

@article{Boldt2014-06-19Elect-44276,
  year={2014},
  doi={10.1021/jp503609f},
  title={Electronic Structure Engineering in ZnSe/CdS Type-II Nanoparticles by Interface Alloying},
  number={24},
  volume={118},
  issn={1932-7447},
  journal={The Journal of Physical Chemistry C},
  pages={13276--13284},
  author={Boldt, Klaus and Schwarz, Kyra N. and Kirkwood, Nicholas and Smith, Trevor A. and Mulvaney, Paul}
}

RDF

<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/44276">
    <dc:contributor>Kirkwood, Nicholas</dc:contributor>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2018-12-11T13:56:19Z</dc:date>
    <dc:contributor>Schwarz, Kyra N.</dc:contributor>
    <dc:creator>Mulvaney, Paul</dc:creator>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dc:contributor>Mulvaney, Paul</dc:contributor>
    <dc:creator>Smith, Trevor A.</dc:creator>
    <dc:creator>Schwarz, Kyra N.</dc:creator>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/29"/>
    <dc:creator>Kirkwood, Nicholas</dc:creator>
    <dc:creator>Boldt, Klaus</dc:creator>
    <dc:language>eng</dc:language>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2018-12-11T13:56:19Z</dcterms:available>
    <dcterms:issued>2014-06-19</dcterms:issued>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/29"/>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/44276"/>
    <dc:contributor>Boldt, Klaus</dc:contributor>
    <dcterms:abstract xml:lang="eng">We report the synthesis and characterization of type-II ZnSe/CdS semiconductor nanocrystals that exhibit strong charge separation, high photoluminescence quantum yields, low optical gain thresholds, and alloyed core–shell interfaces. Shell growth rates and the degree of alloying both depend strongly on the shelling temperature. The core–shell NCs exhibit band edge PL with emission wavelengths spanning the blue to orange region of the electromagnetic spectrum (380–562 nm). Fluorescence quantum yields up to 75% can be obtained by deposition of an additional ZnS layer. Transient absorption spectroscopy reveals that the population of the first two exciton states (1S&lt;sub&gt;e&lt;/sub&gt;–1S&lt;sub&gt;h&lt;/sub&gt;, 1S&lt;sub&gt;e&lt;/sub&gt;–2S&lt;sub&gt;h&lt;/sub&gt;) in the type-II structures can be controlled by alloying. Increased alloying leads to a greater population of the 2S hole state exciton.</dcterms:abstract>
    <dcterms:title>Electronic Structure Engineering in ZnSe/CdS Type-II Nanoparticles by Interface Alloying</dcterms:title>
    <dc:contributor>Smith, Trevor A.</dc:contributor>
  </rdf:Description>
</rdf:RDF>

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