Heavily doped Si:P emitters of crystalline Si solar cells : recombination due to phosphorus precipitation
| dc.contributor.author | Min, Byungsul | |
| dc.contributor.author | Wagner, Hannes | |
| dc.contributor.author | Dastgheib-Shirazi, Amir | |
| dc.contributor.author | Kimmerle, Achim | |
| dc.contributor.author | Kurz, Heinrich | |
| dc.contributor.author | Altermatt, Pietro P. | |
| dc.date.accessioned | 2015-01-30T10:52:35Z | |
| dc.date.available | 2015-01-30T10:52:35Z | |
| dc.date.issued | 2014 | eng |
| dc.description.abstract | The measured saturation current density J0e of heavily phosphorus-doped emitters of crystalline Si solar cells is analysed by means of sophisticated numerical device modelling. It is concluded that Shockley–Read–Hall (SRH) recombination exceeds Auger recombination significantly; it is caused by inactive phosphorus. This explains the large discrepancies between measured and simulated J0e values, observed persist-ently over the last two decades in industrially fabricated Si solar cells. As a consequence, the heavily phosphorus-diffused emitters still bear a significant potential to contribute to higher Si solar cell efficiency levels, if the amount of inactive phosphorus can be reduced. | eng |
| dc.description.version | published | |
| dc.identifier.doi | 10.1002/pssr.201409138 | eng |
| dc.identifier.uri | http://kops.uni-konstanz.de/handle/123456789/29688 | |
| dc.language.iso | eng | eng |
| dc.subject | phosphorus, precipitates, emitters, silicon, solar cells, recombination | eng |
| dc.subject.ddc | 530 | eng |
| dc.title | Heavily doped Si:P emitters of crystalline Si solar cells : recombination due to phosphorus precipitation | eng |
| dc.type | JOURNAL_ARTICLE | eng |
| dspace.entity.type | Publication | |
| kops.citation.bibtex | @article{Min2014Heavi-29688,
year={2014},
doi={10.1002/pssr.201409138},
title={Heavily doped Si:P emitters of crystalline Si solar cells : recombination due to phosphorus precipitation},
number={8},
volume={8},
issn={1862-6254},
journal={Physica Status Solidi (RRL) : Rapid Research Letters},
pages={680--684},
author={Min, Byungsul and Wagner, Hannes and Dastgheib-Shirazi, Amir and Kimmerle, Achim and Kurz, Heinrich and Altermatt, Pietro P.}
} | |
| kops.citation.iso690 | MIN, Byungsul, Hannes WAGNER, Amir DASTGHEIB-SHIRAZI, Achim KIMMERLE, Heinrich KURZ, Pietro P. ALTERMATT, 2014. Heavily doped Si:P emitters of crystalline Si solar cells : recombination due to phosphorus precipitation. In: Physica Status Solidi (RRL) : Rapid Research Letters. 2014, 8(8), pp. 680-684. ISSN 1862-6254. eISSN 1862-6270. Available under: doi: 10.1002/pssr.201409138 | deu |
| kops.citation.iso690 | MIN, Byungsul, Hannes WAGNER, Amir DASTGHEIB-SHIRAZI, Achim KIMMERLE, Heinrich KURZ, Pietro P. ALTERMATT, 2014. Heavily doped Si:P emitters of crystalline Si solar cells : recombination due to phosphorus precipitation. In: Physica Status Solidi (RRL) : Rapid Research Letters. 2014, 8(8), pp. 680-684. ISSN 1862-6254. eISSN 1862-6270. Available under: doi: 10.1002/pssr.201409138 | eng |
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| kops.sourcefield | Physica Status Solidi (RRL) : Rapid Research Letters. 2014, <b>8</b>(8), pp. 680-684. ISSN 1862-6254. eISSN 1862-6270. Available under: doi: 10.1002/pssr.201409138 | deu |
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| kops.sourcefield.plain | Physica Status Solidi (RRL) : Rapid Research Letters. 2014, 8(8), pp. 680-684. ISSN 1862-6254. eISSN 1862-6270. Available under: doi: 10.1002/pssr.201409138 | eng |
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| temp.internal.duplicates | <p>Keine Dubletten gefunden. Letzte Überprüfung: 18.11.2014 10:56:51</p> | deu |