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Heavily doped Si:P emitters of crystalline Si solar cells : recombination due to phosphorus precipitation

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2014

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Min, Byungsul
Wagner, Hannes
Kimmerle, Achim
Kurz, Heinrich
Altermatt, Pietro P.

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https://doi.org/10.1002/pssr.201409138
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Physica Status Solidi (RRL) : Rapid Research Letters. 2014, 8(8), pp. 680-684. ISSN 1862-6254. eISSN 1862-6270. Available under: doi: 10.1002/pssr.201409138

Zusammenfassung

The measured saturation current density J0e of heavily phosphorus-doped emitters of crystalline Si solar cells is analysed by means of sophisticated numerical device modelling. It is concluded that Shockley–Read–Hall (SRH) recombination exceeds Auger recombination significantly; it is caused by inactive phosphorus. This explains the large discrepancies between measured and simulated J0e values, observed persist-ently over the last two decades in industrially fabricated Si solar cells. As a consequence, the heavily phosphorus-diffused emitters still bear a significant potential to contribute to higher Si solar cell efficiency levels, if the amount of inactive phosphorus can be reduced.

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530 Physik

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phosphorus, precipitates, emitters, silicon, solar cells, recombination

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ISO 690MIN, Byungsul, Hannes WAGNER, Amir DASTGHEIB-SHIRAZI, Achim KIMMERLE, Heinrich KURZ, Pietro P. ALTERMATT, 2014. Heavily doped Si:P emitters of crystalline Si solar cells : recombination due to phosphorus precipitation. In: Physica Status Solidi (RRL) : Rapid Research Letters. 2014, 8(8), pp. 680-684. ISSN 1862-6254. eISSN 1862-6270. Available under: doi: 10.1002/pssr.201409138
BibTex
@article{Min2014Heavi-29688,
  year={2014},
  doi={10.1002/pssr.201409138},
  title={Heavily doped Si:P emitters of crystalline Si solar cells : recombination due to phosphorus precipitation},
  number={8},
  volume={8},
  issn={1862-6254},
  journal={Physica Status Solidi (RRL) : Rapid Research Letters},
  pages={680--684},
  author={Min, Byungsul and Wagner, Hannes and Dastgheib-Shirazi, Amir and Kimmerle, Achim and Kurz, Heinrich and Altermatt, Pietro P.}
}
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