Below-band-gap electroluminescence related to doping spikes in boron-implanted silicon pn diodes

Kurzanzeige
dc.contributor.authorSun, Jiamingdeu
dc.contributor.authorDekorsy, Thomas
dc.contributor.authorSkorupa, Wolfgangdeu
dc.contributor.authorSchmidt, Bernddeu
dc.contributor.authorMücklich, Arndtdeu
dc.contributor.authorHelm, Manfreddeu
dc.date.accessioned2011-03-24T17:52:22Zdeu
dc.date.available2011-03-24T17:52:22Zdeu
dc.date.issued2004deu
dc.description.abstractThe origin of two luminescence bands with maxima around 1.05 eV and 0.95 eV is studied in silicon pn diodes prepared by boron implantation. The two peaks are related to the formation of p-type doping spikes on a nanometer scale. These doping spikes are generated by long-time thermal activation of preformed boron clusters. The peak with a larger binding energy stems from spatially indirect excitons bound to doping spikes in a strained environment, while the peak with a lower binding energy is related to doping spikes without strain. The doping spikes are able to capture spatially indirect bound excitons with a low recombination rate, thus effectively suppressing the fast nonradiative recombination at defects. This effect leads to an efficient room temperature electroluminescence in silicon light-emitting diodes prepared by boron implantation.eng
dc.description.versionpublished
dc.format.mimetypeapplication/pdfdeu
dc.identifier.citationFirst publ. in: Physical Review B 70 (2004), 15, 155316deu
dc.identifier.doi10.1103/PhysRevB.70.155316
dc.identifier.ppn276094255deu
dc.identifier.urihttp://kops.uni-konstanz.de/handle/123456789/8955
dc.language.isoengdeu
dc.legacy.dateIssued2008deu
dc.rightsAttribution-NonCommercial-NoDerivs 2.0 Generic
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/
dc.subject.ddc530deu
dc.titleBelow-band-gap electroluminescence related to doping spikes in boron-implanted silicon pn diodeseng
dc.typeJOURNAL_ARTICLEdeu
dspace.entity.typePublication
kops.citation.bibtex
@article{Sun2004Below-8955,
  year={2004},
  doi={10.1103/PhysRevB.70.155316},
  title={Below-band-gap electroluminescence related to doping spikes in boron-implanted silicon pn diodes},
  number={15},
  volume={70},
  journal={Physical Review B},
  author={Sun, Jiaming and Dekorsy, Thomas and Skorupa, Wolfgang and Schmidt, Bernd and Mücklich, Arndt and Helm, Manfred},
  note={Article Number: 155316}
}
kops.citation.iso690SUN, Jiaming, Thomas DEKORSY, Wolfgang SKORUPA, Bernd SCHMIDT, Arndt MÜCKLICH, Manfred HELM, 2004. Below-band-gap electroluminescence related to doping spikes in boron-implanted silicon pn diodes. In: Physical Review B. 2004, 70(15), 155316. Available under: doi: 10.1103/PhysRevB.70.155316deu
kops.citation.iso690SUN, Jiaming, Thomas DEKORSY, Wolfgang SKORUPA, Bernd SCHMIDT, Arndt MÜCKLICH, Manfred HELM, 2004. Below-band-gap electroluminescence related to doping spikes in boron-implanted silicon pn diodes. In: Physical Review B. 2004, 70(15), 155316. Available under: doi: 10.1103/PhysRevB.70.155316eng
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kops.sourcefield.plainPhysical Review B. 2004, 70(15), 155316. Available under: doi: 10.1103/PhysRevB.70.155316eng
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source.periodicalTitlePhysical Review B

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