Publikation: Below-band-gap electroluminescence related to doping spikes in boron-implanted silicon pn diodes
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2004
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Physical Review B. 2004, 70(15), 155316. Available under: doi: 10.1103/PhysRevB.70.155316
Zusammenfassung
The origin of two luminescence bands with maxima around 1.05 eV and 0.95 eV is studied in silicon pn diodes prepared by boron implantation. The two peaks are related to the formation of p-type doping spikes on a nanometer scale. These doping spikes are generated by long-time thermal activation of preformed boron clusters. The peak with a larger binding energy stems from spatially indirect excitons bound to doping spikes in a strained environment, while the peak with a lower binding energy is related to doping spikes without strain. The doping spikes are able to capture spatially indirect bound excitons with a low recombination rate, thus effectively suppressing the fast nonradiative recombination at defects. This effect leads to an efficient room temperature electroluminescence in silicon light-emitting diodes prepared by boron implantation.
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SUN, Jiaming, Thomas DEKORSY, Wolfgang SKORUPA, Bernd SCHMIDT, Arndt MÜCKLICH, Manfred HELM, 2004. Below-band-gap electroluminescence related to doping spikes in boron-implanted silicon pn diodes. In: Physical Review B. 2004, 70(15), 155316. Available under: doi: 10.1103/PhysRevB.70.155316BibTex
@article{Sun2004Below-8955,
year={2004},
doi={10.1103/PhysRevB.70.155316},
title={Below-band-gap electroluminescence related to doping spikes in boron-implanted silicon pn diodes},
number={15},
volume={70},
journal={Physical Review B},
author={Sun, Jiaming and Dekorsy, Thomas and Skorupa, Wolfgang and Schmidt, Bernd and Mücklich, Arndt and Helm, Manfred},
note={Article Number: 155316}
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<dcterms:abstract xml:lang="eng">The origin of two luminescence bands with maxima around 1.05 eV and 0.95 eV is studied in silicon pn diodes prepared by boron implantation. The two peaks are related to the formation of p-type doping spikes on a nanometer scale. These doping spikes are generated by long-time thermal activation of preformed boron clusters. The peak with a larger binding energy stems from spatially indirect excitons bound to doping spikes in a strained environment, while the peak with a lower binding energy is related to doping spikes without strain. The doping spikes are able to capture spatially indirect bound excitons with a low recombination rate, thus effectively suppressing the fast nonradiative recombination at defects. This effect leads to an efficient room temperature electroluminescence in silicon light-emitting diodes prepared by boron implantation.</dcterms:abstract>
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