The etchback selective emitter technology and its application to multicrystalline silicon

Kurzanzeige
dc.contributor.authorBook, Felix
dc.contributor.authorBraun, Stefan
dc.contributor.authorHerguth, Axel
dc.contributor.authorDastgheib-Shirazi, Amir
dc.contributor.authorRaabe, Bernd
dc.contributor.authorHahn, Giso
dc.date.accessioned2011-10-05T08:51:47Zdeu
dc.date.available2011-10-05T08:51:47Zdeu
dc.date.issued2010-06
dc.description.abstractWe have developed a simple and industrially applicable selective emitter cell process using only one diffusion step and an emitter etchback to create the high sheet resistance emitter. The process generates a deeper doping profile with a lower surface phosphorous concentration than a directly diffused emitter with the same sheet resistance. This results in an extremely low emitter saturation current j0E even at a moderate sheet resistance of 60-80 Ω/□. The highest independently confirmed cell efficiency on Cz-Si (146 cm²) was 18.7%. In this work the etching behavior of the acidic solution at the grain boundaries is studied by SEM imaging and high resolution LBIC measurements at 405 nm wavelength. The etchback also leads to a change in reflectivity, which is quantified by reflectance measurements. We furthermore investigate the influence of the base material quality on the gain that can be achieved by this process. Large area solar cells have been processed from solar grade and UMG mc silicon.eng
dc.description.versionpublished
dc.identifier.citationPubl. in: 35th IEEE Photovoltaic Specialists Conference (PVSC 2010): Honolulu, Hawaii, USA, 20 - 25 June 2010 / [IEEE Electron Devices Society]. Piscataway, NJ : IEEE, 2010. pp. 1309-1314deu
dc.identifier.doi10.1109/PVSC.2010.5614267deu
dc.identifier.ppn510279996
dc.identifier.urihttp://kops.uni-konstanz.de/handle/123456789/15926
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dc.legacy.dateIssued2011-10-05deu
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dc.subject.ddc530deu
dc.titleThe etchback selective emitter technology and its application to multicrystalline siliconeng
dc.typeINPROCEEDINGSdeu
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kops.citation.bibtex
@inproceedings{Book2010-06etchb-15926,
  year={2010},
  doi={10.1109/PVSC.2010.5614267},
  title={The etchback selective emitter technology and its application to multicrystalline silicon},
  isbn={978-1-4244-5890-5},
  publisher={IEEE},
  booktitle={2010 35th IEEE Photovoltaic Specialists Conference},
  pages={001309--001314},
  author={Book, Felix and Braun, Stefan and Herguth, Axel and Dastgheib-Shirazi, Amir and Raabe, Bernd and Hahn, Giso}
}
kops.citation.iso690BOOK, Felix, Stefan BRAUN, Axel HERGUTH, Amir DASTGHEIB-SHIRAZI, Bernd RAABE, Giso HAHN, 2010. The etchback selective emitter technology and its application to multicrystalline silicon. 2010 35th IEEE Photovoltaic Specialists Conference (PVSC). Honolulu, HI, USA, 20. Juni 2010 - 25. Juni 2010. In: 2010 35th IEEE Photovoltaic Specialists Conference. IEEE, 2010, pp. 001309-001314. ISBN 978-1-4244-5890-5. Available under: doi: 10.1109/PVSC.2010.5614267deu
kops.citation.iso690BOOK, Felix, Stefan BRAUN, Axel HERGUTH, Amir DASTGHEIB-SHIRAZI, Bernd RAABE, Giso HAHN, 2010. The etchback selective emitter technology and its application to multicrystalline silicon. 2010 35th IEEE Photovoltaic Specialists Conference (PVSC). Honolulu, HI, USA, Jun 20, 2010 - Jun 25, 2010. In: 2010 35th IEEE Photovoltaic Specialists Conference. IEEE, 2010, pp. 001309-001314. ISBN 978-1-4244-5890-5. Available under: doi: 10.1109/PVSC.2010.5614267eng
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    <dcterms:abstract xml:lang="eng">We have developed a simple and industrially applicable selective emitter cell process using only one diffusion step and an emitter etchback to create the high sheet resistance emitter. The process generates a deeper doping profile with a lower surface phosphorous concentration than a directly diffused emitter with the same sheet resistance. This results in an extremely low emitter saturation current j0E even at a moderate sheet resistance of 60-80 Ω/□. The highest independently confirmed cell efficiency on Cz-Si (146 cm²) was 18.7%. In this work the etching behavior of the acidic solution at the grain boundaries is studied by SEM imaging and high resolution LBIC measurements at 405 nm wavelength. The etchback also leads to a change in reflectivity, which is quantified by reflectance measurements. We furthermore investigate the influence of the base material quality on the gain that can be achieved by this process. Large area solar cells have been processed from solar grade and UMG mc silicon.</dcterms:abstract>
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kops.conferencefield2010 35th IEEE Photovoltaic Specialists Conference (PVSC), 20. Juni 2010 - 25. Juni 2010, Honolulu, HI, USAdeu
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kops.sourcefield<i>2010 35th IEEE Photovoltaic Specialists Conference</i>. IEEE, 2010, pp. 001309-001314. ISBN 978-1-4244-5890-5. Available under: doi: 10.1109/PVSC.2010.5614267deu
kops.sourcefield.plain2010 35th IEEE Photovoltaic Specialists Conference. IEEE, 2010, pp. 001309-001314. ISBN 978-1-4244-5890-5. Available under: doi: 10.1109/PVSC.2010.5614267deu
kops.sourcefield.plain2010 35th IEEE Photovoltaic Specialists Conference. IEEE, 2010, pp. 001309-001314. ISBN 978-1-4244-5890-5. Available under: doi: 10.1109/PVSC.2010.5614267eng
kops.submitter.emaillarysa.herasymova@uni-konstanz.dedeu
kops.title.conference2010 35th IEEE Photovoltaic Specialists Conference (PVSC)
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