Passivation of Mn acceptors in GaMnAs

Kurzanzeige
dc.contributor.authorBrandt, Martin S.
dc.contributor.authorGoennenwein, Sebastian T. B.
dc.contributor.authorWassner, Thomas A.
dc.contributor.authorLehner, Andrea
dc.contributor.authorHuebl, Hans
dc.contributor.authorGraf, Thomas
dc.contributor.authorStutzmann, Martin
dc.contributor.authorKoeder, Achim
dc.contributor.authorSchoch, Wladimir
dc.contributor.authorWaag, Andreas
dc.date.accessioned2021-04-29T13:53:16Z
dc.date.available2021-04-29T13:53:16Z
dc.date.issued2004eng
dc.description.abstractThe effects of hydrogen and deuterium on ferromagnetic GaAs doped with high concentrations of Mn (≈1021 cm−3) are studied. Secondary ion mass spectroscopy depth profiles show that D is incorporated in the same concentration as Mn. The epilayers change from metallic to semiconducting behavior upon hydrogenation. Fourier transform infrared absorption measurements show the As–H and As–D local vibrational modes characteristic for the complexes of hydrogen with group-II acceptors in GaAs.eng
dc.description.versionpublishedeng
dc.identifier.doi10.1063/1.1690470eng
dc.identifier.urihttps://kops.uni-konstanz.de/handle/123456789/53544
dc.language.isoengeng
dc.rightsterms-of-use
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dc.subject.ddc530eng
dc.titlePassivation of Mn acceptors in GaMnAseng
dc.typeJOURNAL_ARTICLEeng
dspace.entity.typePublication
kops.citation.bibtex
@article{Brandt2004Passi-53544,
  year={2004},
  doi={10.1063/1.1690470},
  title={Passivation of Mn acceptors in GaMnAs},
  number={13},
  volume={84},
  issn={0003-6951},
  journal={Applied Physics Letters},
  pages={2277--2279},
  author={Brandt, Martin S. and Goennenwein, Sebastian T. B. and Wassner, Thomas A. and Lehner, Andrea and Huebl, Hans and Graf, Thomas and Stutzmann, Martin and Koeder, Achim and Schoch, Wladimir and Waag, Andreas}
}
kops.citation.iso690BRANDT, Martin S., Sebastian T. B. GOENNENWEIN, Thomas A. WASSNER, Andrea LEHNER, Hans HUEBL, Thomas GRAF, Martin STUTZMANN, Achim KOEDER, Wladimir SCHOCH, Andreas WAAG, 2004. Passivation of Mn acceptors in GaMnAs. In: Applied Physics Letters. American Institute of Physics (AIP). 2004, 84(13), pp. 2277-2279. ISSN 0003-6951. eISSN 1077-3118. Available under: doi: 10.1063/1.1690470deu
kops.citation.iso690BRANDT, Martin S., Sebastian T. B. GOENNENWEIN, Thomas A. WASSNER, Andrea LEHNER, Hans HUEBL, Thomas GRAF, Martin STUTZMANN, Achim KOEDER, Wladimir SCHOCH, Andreas WAAG, 2004. Passivation of Mn acceptors in GaMnAs. In: Applied Physics Letters. American Institute of Physics (AIP). 2004, 84(13), pp. 2277-2279. ISSN 0003-6951. eISSN 1077-3118. Available under: doi: 10.1063/1.1690470eng
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    <dcterms:abstract xml:lang="eng">The effects of hydrogen and deuterium on ferromagnetic GaAs doped with high concentrations of Mn (≈10&lt;sup&gt;21&lt;/sup&gt; cm&lt;sup&gt;−3&lt;/sup&gt;) are studied. Secondary ion mass spectroscopy depth profiles show that D is incorporated in the same concentration as Mn. The epilayers change from metallic to semiconducting behavior upon hydrogenation. Fourier transform infrared absorption measurements show the As–H and As–D local vibrational modes characteristic for the complexes of hydrogen with group-II acceptors in GaAs.</dcterms:abstract>
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kops.sourcefieldApplied Physics Letters. American Institute of Physics (AIP). 2004, <b>84</b>(13), pp. 2277-2279. ISSN 0003-6951. eISSN 1077-3118. Available under: doi: 10.1063/1.1690470deu
kops.sourcefield.plainApplied Physics Letters. American Institute of Physics (AIP). 2004, 84(13), pp. 2277-2279. ISSN 0003-6951. eISSN 1077-3118. Available under: doi: 10.1063/1.1690470deu
kops.sourcefield.plainApplied Physics Letters. American Institute of Physics (AIP). 2004, 84(13), pp. 2277-2279. ISSN 0003-6951. eISSN 1077-3118. Available under: doi: 10.1063/1.1690470eng
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source.bibliographicInfo.volume84eng
source.identifier.eissn1077-3118eng
source.identifier.issn0003-6951eng
source.periodicalTitleApplied Physics Letterseng
source.publisherAmerican Institute of Physics (AIP)eng

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