Hydrogen and Magnetism in Ga1-xMnxAs

dc.contributor.authorGoennenwein, Sebastian T. B.
dc.contributor.authorWassner, Thomas A.
dc.contributor.authorHuebl, Hans
dc.contributor.authorKoeder, Achim
dc.contributor.authorSchoch, Wladimir
dc.contributor.authorWaag, Andreas
dc.contributor.authorPhilipp, Jan B.
dc.contributor.authorOpel, Matthias
dc.contributor.authorGross, Rudolf
dc.contributor.authorBrandt, Martin S.
dc.date.accessioned2021-04-29T13:47:57Z
dc.date.available2021-04-29T13:47:57Z
dc.date.issued2004eng
dc.description.abstractOur recent studies of the influence of hydrogenation on the ferromagnetic semiconductor Ga1−xMnxAs are reviewed. We find that upon exposure to a remote DC hydrogen plasma, the hole density p in Ga1−xMnxAs thin films with x=0.037 and x=0.051 can be reduced by several orders of magnitude, while the density of Mn magnetic moments is not significantly affected by the plasma treatment. The ferromagnetism clearly present in the as-grown samples vanishes after hydrogen incorporation. We analyze the effect of the hydrogenation in detail with the help of secondary ion mass spectroscopy, electronic transport, Hall, DC magnetization, and Fourier-transform infra-red absorption experiments. All results indicate that the Mn acceptors are electrically passivated by the formation of Mn-As-H complexes, resulting in the loss of long-range magnetic ordering.eng
dc.description.versionpublishedeng
dc.identifier.doi10.1007/978-3-540-39970-4_35eng
dc.identifier.urihttps://kops.uni-konstanz.de/handle/123456789/53543
dc.language.isoengeng
dc.rightsterms-of-use
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dc.subject.ddc530eng
dc.titleHydrogen and Magnetism in Ga<sub>1-x</sub>Mn<sub>x</sub>Aseng
dc.typeINCOLLECTIONeng
dspace.entity.typePublication
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@incollection{Goennenwein2004Hydro-53543,
  year={2004},
  doi={10.1007/978-3-540-39970-4_35},
  title={Hydrogen and Magnetism in Ga<sub>1-x</sub>Mn<sub>x</sub>As},
  number={44},
  isbn={978-3-540-21148-8},
  publisher={Springer},
  address={Berlin},
  series={Advances in Solid State Physics},
  booktitle={Advances in Solid State Physics},
  pages={453--465},
  editor={Kramer, Bernhard},
  author={Goennenwein, Sebastian T. B. and Wassner, Thomas A. and Huebl, Hans and Koeder, Achim and Schoch, Wladimir and Waag, Andreas and Philipp, Jan B. and Opel, Matthias and Gross, Rudolf and Brandt, Martin S.}
}
kops.citation.iso690GOENNENWEIN, Sebastian T. B., Thomas A. WASSNER, Hans HUEBL, Achim KOEDER, Wladimir SCHOCH, Andreas WAAG, Jan B. PHILIPP, Matthias OPEL, Rudolf GROSS, Martin S. BRANDT, 2004. Hydrogen and Magnetism in Ga1-xMnxAs. In: KRAMER, Bernhard, ed.. Advances in Solid State Physics. Berlin: Springer, 2004, pp. 453-465. Advances in Solid State Physics. 44. ISBN 978-3-540-21148-8. Available under: doi: 10.1007/978-3-540-39970-4_35deu
kops.citation.iso690GOENNENWEIN, Sebastian T. B., Thomas A. WASSNER, Hans HUEBL, Achim KOEDER, Wladimir SCHOCH, Andreas WAAG, Jan B. PHILIPP, Matthias OPEL, Rudolf GROSS, Martin S. BRANDT, 2004. Hydrogen and Magnetism in Ga1-xMnxAs. In: KRAMER, Bernhard, ed.. Advances in Solid State Physics. Berlin: Springer, 2004, pp. 453-465. Advances in Solid State Physics. 44. ISBN 978-3-540-21148-8. Available under: doi: 10.1007/978-3-540-39970-4_35eng
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kops.sourcefieldKRAMER, Bernhard, ed.. <i>Advances in Solid State Physics</i>. Berlin: Springer, 2004, pp. 453-465. Advances in Solid State Physics. 44. ISBN 978-3-540-21148-8. Available under: doi: 10.1007/978-3-540-39970-4_35deu
kops.sourcefield.plainKRAMER, Bernhard, ed.. Advances in Solid State Physics. Berlin: Springer, 2004, pp. 453-465. Advances in Solid State Physics. 44. ISBN 978-3-540-21148-8. Available under: doi: 10.1007/978-3-540-39970-4_35deu
kops.sourcefield.plainKRAMER, Bernhard, ed.. Advances in Solid State Physics. Berlin: Springer, 2004, pp. 453-465. Advances in Solid State Physics. 44. ISBN 978-3-540-21148-8. Available under: doi: 10.1007/978-3-540-39970-4_35eng
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source.contributor.editorKramer, Bernhard
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source.relation.ispartofseriesAdvances in Solid State Physicseng
source.titleAdvances in Solid State Physicseng

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