Publikation: Hydrogen and Magnetism in Ga1-xMnxAs
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Our recent studies of the influence of hydrogenation on the ferromagnetic semiconductor Ga1−xMnxAs are reviewed. We find that upon exposure to a remote DC hydrogen plasma, the hole density p in Ga1−xMnxAs thin films with x=0.037 and x=0.051 can be reduced by several orders of magnitude, while the density of Mn magnetic moments is not significantly affected by the plasma treatment. The ferromagnetism clearly present in the as-grown samples vanishes after hydrogen incorporation. We analyze the effect of the hydrogenation in detail with the help of secondary ion mass spectroscopy, electronic transport, Hall, DC magnetization, and Fourier-transform infra-red absorption experiments. All results indicate that the Mn acceptors are electrically passivated by the formation of Mn-As-H complexes, resulting in the loss of long-range magnetic ordering.
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GOENNENWEIN, Sebastian T. B., Thomas A. WASSNER, Hans HUEBL, Achim KOEDER, Wladimir SCHOCH, Andreas WAAG, Jan B. PHILIPP, Matthias OPEL, Rudolf GROSS, Martin S. BRANDT, 2004. Hydrogen and Magnetism in Ga1-xMnxAs. In: KRAMER, Bernhard, ed.. Advances in Solid State Physics. Berlin: Springer, 2004, pp. 453-465. Advances in Solid State Physics. 44. ISBN 978-3-540-21148-8. Available under: doi: 10.1007/978-3-540-39970-4_35BibTex
@incollection{Goennenwein2004Hydro-53543, year={2004}, doi={10.1007/978-3-540-39970-4_35}, title={Hydrogen and Magnetism in Ga<sub>1-x</sub>Mn<sub>x</sub>As}, number={44}, isbn={978-3-540-21148-8}, publisher={Springer}, address={Berlin}, series={Advances in Solid State Physics}, booktitle={Advances in Solid State Physics}, pages={453--465}, editor={Kramer, Bernhard}, author={Goennenwein, Sebastian T. B. and Wassner, Thomas A. and Huebl, Hans and Koeder, Achim and Schoch, Wladimir and Waag, Andreas and Philipp, Jan B. and Opel, Matthias and Gross, Rudolf and Brandt, Martin S.} }
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