Spatially resolved investigations of lifetime enhancement in vertically grown silicon ribbons

Geiger, Patric; Kragler, G.; Hahn, Giso; Fath, Peter

Spatially resolved investigations of lifetime enhancement in vertically grown silicon ribbons

Dateien

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Datum

2005

Autor:innen

Geiger, Patric

Kragler, G.

Hahn, Giso

Fath, Peter

Open Access-Veröffentlichung

Open Access Green

Sammlungen

Physik

Publikationstyp

Zeitschriftenartikel

Publikationsstatus

Published

Erschienen in

Solar Energy Materials and Solar Cells. 2005, 85(4), pp. 559-572. ISSN 0927-0248. eISSN 1879-3398. Available under: doi: 10.1016/j.solmat.2004.05.023

Zusammenfassung

The influence of gettering or defect passivation steps on recombination activity in the vertically grown, multicrystalline ribbon materials edge-defined film-fed growth and string ribbon silicon has been investigated with the help of photoconductance decay. In contrast to well-known results of integral measurements, spatially resolved lifetime mappings have been obtained by applying microwave detection technique.

This aspect of spatial resolution has been found to be indispensable for investigating the impact of different processing steps on material quality in an accurate way. Apart from strong variations in as-grown lifetimes that have been found throughout vertically grown silicon wafers, this is due to areas of comparable starting lifetimes which have been revealed to react very differently to applied processing steps. After processing, some of them reach minority charge carrier lifetimes of more than 300 μsμs whereas others just show values of a few microseconds. As a consequence, the results of integral measurements strongly depend on the nature of areas incorporated in the specific sample. An impression of the corresponding uncertainties inherent to integral measurements has been obtained by statistical evaluation of spatially resolved lifetime data.

Fachgebiet (DDC)

530 Physik

Zitieren

ISO 690

GEIGER, Patric, G. KRAGLER, Giso HAHN, Peter FATH, 2005. Spatially resolved investigations of lifetime enhancement in vertically grown silicon ribbons. In: Solar Energy Materials and Solar Cells. 2005, 85(4), pp. 559-572. ISSN 0927-0248. eISSN 1879-3398. Available under: doi: 10.1016/j.solmat.2004.05.023

BibTex

@article{Geiger2005Spati-30990,
  year={2005},
  doi={10.1016/j.solmat.2004.05.023},
  title={Spatially resolved investigations of lifetime enhancement in vertically grown silicon ribbons},
  number={4},
  volume={85},
  issn={0927-0248},
  journal={Solar Energy Materials and Solar Cells},
  pages={559--572},
  author={Geiger, Patric and Kragler, G. and Hahn, Giso and Fath, Peter}
}

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