Spatially resolved investigations of lifetime enhancement in vertically grown silicon ribbons

Lade...
Vorschaubild
Dateien
Geiger_2-dowbhzjg27u36.pdf
Geiger_2-dowbhzjg27u36.pdfGröße: 748.45 KBDownloads: 196
Datum
2005
Autor:innen
Geiger, Patric
Kragler, G.
Fath, Peter
Herausgeber:innen
Kontakt
ISSN der Zeitschrift
Electronic ISSN
ISBN
Bibliografische Daten
Verlag
Schriftenreihe
Auflagebezeichnung
ArXiv-ID
Internationale Patentnummer
Angaben zur Forschungsförderung
Projekt
Open Access-Veröffentlichung
Open Access Green
Sammlungen
Core Facility der Universität Konstanz
Gesperrt bis
Titel in einer weiteren Sprache
Publikationstyp
Zeitschriftenartikel
Publikationsstatus
Published
Erschienen in
Solar Energy Materials and Solar Cells. 2005, 85(4), pp. 559-572. ISSN 0927-0248. eISSN 1879-3398. Available under: doi: 10.1016/j.solmat.2004.05.023
Zusammenfassung

The influence of gettering or defect passivation steps on recombination activity in the vertically grown, multicrystalline ribbon materials edge-defined film-fed growth and string ribbon silicon has been investigated with the help of photoconductance decay. In contrast to well-known results of integral measurements, spatially resolved lifetime mappings have been obtained by applying microwave detection technique.

This aspect of spatial resolution has been found to be indispensable for investigating the impact of different processing steps on material quality in an accurate way. Apart from strong variations in as-grown lifetimes that have been found throughout vertically grown silicon wafers, this is due to areas of comparable starting lifetimes which have been revealed to react very differently to applied processing steps. After processing, some of them reach minority charge carrier lifetimes of more than 300 μsμs whereas others just show values of a few microseconds. As a consequence, the results of integral measurements strongly depend on the nature of areas incorporated in the specific sample. An impression of the corresponding uncertainties inherent to integral measurements has been obtained by statistical evaluation of spatially resolved lifetime data.

Zusammenfassung in einer weiteren Sprache
Fachgebiet (DDC)
530 Physik
Schlagwörter
Konferenz
Rezension
undefined / . - undefined, undefined
Forschungsvorhaben
Organisationseinheiten
Zeitschriftenheft
Datensätze
Zitieren
ISO 690GEIGER, Patric, G. KRAGLER, Giso HAHN, Peter FATH, 2005. Spatially resolved investigations of lifetime enhancement in vertically grown silicon ribbons. In: Solar Energy Materials and Solar Cells. 2005, 85(4), pp. 559-572. ISSN 0927-0248. eISSN 1879-3398. Available under: doi: 10.1016/j.solmat.2004.05.023
BibTex
@article{Geiger2005Spati-30990,
  year={2005},
  doi={10.1016/j.solmat.2004.05.023},
  title={Spatially resolved investigations of lifetime enhancement in vertically grown silicon ribbons},
  number={4},
  volume={85},
  issn={0927-0248},
  journal={Solar Energy Materials and Solar Cells},
  pages={559--572},
  author={Geiger, Patric and Kragler, G. and Hahn, Giso and Fath, Peter}
}
RDF
<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/30990">
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2015-05-20T09:39:46Z</dc:date>
    <dcterms:issued>2005</dcterms:issued>
    <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/30990/1/Geiger_2-dowbhzjg27u36.pdf"/>
    <dc:creator>Kragler, G.</dc:creator>
    <dc:language>eng</dc:language>
    <dc:rights>terms-of-use</dc:rights>
    <dc:contributor>Kragler, G.</dc:contributor>
    <dc:contributor>Geiger, Patric</dc:contributor>
    <dc:creator>Hahn, Giso</dc:creator>
    <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/30990"/>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <dcterms:abstract xml:lang="eng">The influence of gettering or defect passivation steps on recombination activity in the vertically grown, multicrystalline ribbon materials edge-defined film-fed growth and string ribbon silicon has been investigated with the help of photoconductance decay. In contrast to well-known results of integral measurements, spatially resolved lifetime mappings have been obtained by applying microwave detection technique.&lt;br /&gt;&lt;br /&gt;This aspect of spatial resolution has been found to be indispensable for investigating the impact of different processing steps on material quality in an accurate way. Apart from strong variations in as-grown lifetimes that have been found throughout vertically grown silicon wafers, this is due to areas of comparable starting lifetimes which have been revealed to react very differently to applied processing steps. After processing, some of them reach minority charge carrier lifetimes of more than 300 μsμs whereas others just show values of a few microseconds. As a consequence, the results of integral measurements strongly depend on the nature of areas incorporated in the specific sample. An impression of the corresponding uncertainties inherent to integral measurements has been obtained by statistical evaluation of spatially resolved lifetime data.</dcterms:abstract>
    <dcterms:rights rdf:resource="https://rightsstatements.org/page/InC/1.0/"/>
    <dc:contributor>Fath, Peter</dc:contributor>
    <dc:creator>Geiger, Patric</dc:creator>
    <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/30990/1/Geiger_2-dowbhzjg27u36.pdf"/>
    <dc:contributor>Hahn, Giso</dc:contributor>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2015-05-20T09:39:46Z</dcterms:available>
    <dc:creator>Fath, Peter</dc:creator>
    <dcterms:title>Spatially resolved investigations of lifetime enhancement in vertically grown silicon ribbons</dcterms:title>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
  </rdf:Description>
</rdf:RDF>
Interner Vermerk
xmlui.Submission.submit.DescribeStep.inputForms.label.kops_note_fromSubmitter
Kontakt
URL der Originalveröffentl.
Prüfdatum der URL
Prüfungsdatum der Dissertation
Finanzierungsart
Kommentar zur Publikation
Allianzlizenz
Corresponding Authors der Uni Konstanz vorhanden
Internationale Co-Autor:innen
Universitätsbibliographie
Ja
Begutachtet
Diese Publikation teilen