Influence of rear side coating on emitter formation during POCL3 diffusion process

Thumbnail Image
Files
Steyer_0-374380.pdf(278.96 KB)
Date
2016
Authors
Editors
Contact
Journal ISSN
Electronic ISSN
ISBN
Bibliographical data
Publisher
Series
URI (citable link)
urn:nbn:de:bsz:352-0-374380
DOI (citable link)
10.4229/EUPVSEC20162016-2AV.1.7
ArXiv-ID
International patent number
Link to the license
In Copyright
EU project number
Project
Open Access publication
Collections
Physik
Restricted until
Title in another language
Research Projects
Organizational Units
Journal Issue
Publication type
Contribution to a conference collection
Publication status
Published
Published in
Proceedings of 32nd EU PVSEC. - München : WIP, 2016. - pp. 595-597. - eISSN 2196-100X. - ISBN 3-936338-41-8
Abstract
The influence of a SiNx coating of a Si wafer on sheet resistance (RSh) of a neighbouring wafer during POCl3 diffusion process is investigated. Wafers facing the SiNx layer of the neighboring wafer in the next slot of the quartz boat show a lower RSh compared to those facing a bare Si wafer, e.g. a reduction from 61 Ω/sq to 52 Ω/sq and a thicker PSG layer are determined. The active doping profile, measured by ECV, shows a deeper plateau region while the tail region is unchanged. Accordingly, the emitter saturation current density rises from 130 fA cm-2 to 193 fA cm-2. We propose that the thicker PSG layer originates from a lower consumption of the reactive gases (POCl3-N2 and O2) at the SiNx coated surface and thus a higher availability of them at the bare Si surface. On the other hand, we also investigate the influence of the thickness of the SiNx rear coating on the emitter at the non-coated Si surface. Already a very thin layer of 20 nm SiNx causes a significant change in RSh and the emitter profile, while there was no difference observed for the SiNx thickness in the range from 20 nm to 160 nm. Facing a rear coated neighbor wafer during diffusion seems to improve the uniformity of RSh on 6-inch large area wafers.
Summary in another language
Subject (DDC)
530 Physics
Keywords
POCl3, Diffusion, Emitter, PSG, PERC, Coating, Passivation
Conference
32nd European Photovoltaic Solar Energy Conference and Exhibition, Jun 20, 2016 - Jun 24, 2016, Munich
Review
undefined / . - undefined, undefined. - (undefined; undefined)
Cite This
ISO 690STEYER, Michael, Amir DASTGHEIB-SHIRAZI, Josh ENGELHARDT, Giso HAHN, Barbara TERHEIDEN, 2016. Influence of rear side coating on emitter formation during POCL3 diffusion process. 32nd European Photovoltaic Solar Energy Conference and Exhibition. Munich, Jun 20, 2016 - Jun 24, 2016. In: Proceedings of 32nd EU PVSEC. München:WIP, pp. 595-597. eISSN 2196-100X. ISBN 3-936338-41-8. Available under: doi: 10.4229/EUPVSEC20162016-2AV.1.7
BibTex
@inproceedings{Steyer2016Influ-36373,
  year={2016},
  doi={10.4229/EUPVSEC20162016-2AV.1.7},
  title={Influence of rear side coating on emitter formation during POCL<sub>3</sub> diffusion process},
  isbn={3-936338-41-8},
  publisher={WIP},
  address={München},
  booktitle={Proceedings of 32nd EU PVSEC},
  pages={595--597},
  author={Steyer, Michael and Dastgheib-Shirazi, Amir and Engelhardt, Josh and Hahn, Giso and Terheiden, Barbara}
}
RDF
<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/36373">
    <dc:creator>Engelhardt, Josh</dc:creator>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:contributor>Terheiden, Barbara</dc:contributor>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2016-12-16T14:17:59Z</dc:date>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:contributor>Dastgheib-Shirazi, Amir</dc:contributor>
    <dcterms:rights rdf:resource="https://rightsstatements.org/page/InC/1.0/"/>
    <dcterms:title>Influence of rear side coating on emitter formation during POCL&lt;sub&gt;3&lt;/sub&gt; diffusion process</dcterms:title>
    <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/36373/3/Steyer_0-374380.pdf"/>
    <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/36373"/>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2016-12-16T14:17:59Z</dcterms:available>
    <dc:contributor>Steyer, Michael</dc:contributor>
    <dc:contributor>Engelhardt, Josh</dc:contributor>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <dcterms:abstract xml:lang="eng">The influence of a SiN&lt;sub&gt;x&lt;/sub&gt; coating of a Si wafer on sheet resistance (R&lt;sub&gt;Sh&lt;/sub&gt;) of a neighbouring wafer during POCl&lt;sub&gt;3&lt;/sub&gt; diffusion process is investigated. Wafers facing the SiN&lt;sub&gt;x&lt;/sub&gt; layer of the neighboring wafer in the next slot of the quartz boat show a lower R&lt;sub&gt;Sh&lt;/sub&gt; compared to those facing a bare Si wafer, e.g. a reduction from 61 Ω/sq to 52 Ω/sq and a thicker PSG layer are determined. The active doping profile, measured by ECV, shows a deeper plateau region while the tail region is unchanged. Accordingly, the emitter saturation current density rises from 130 fA cm&lt;sup&gt;-2&lt;/sup&gt; to 193 fA cm&lt;sup&gt;-2&lt;/sup&gt;. We propose that the thicker PSG layer originates from a lower consumption of the reactive gases (POCl&lt;sub&gt;3&lt;/sub&gt;-N&lt;sub&gt;2&lt;/sub&gt; and O&lt;sub&gt;2&lt;/sub&gt;) at the SiN&lt;sub&gt;x&lt;/sub&gt; coated surface and thus a higher availability of them at the bare Si surface. On the other hand, we also investigate the influence of the thickness of the SiN&lt;sub&gt;x&lt;/sub&gt; rear coating on the emitter at the non-coated Si surface. Already a very thin layer of 20 nm SiNx causes a significant change in R&lt;sub&gt;Sh&lt;/sub&gt; and the emitter profile, while there was no difference observed for the SiN&lt;sub&gt;x&lt;/sub&gt; thickness in the range from 20 nm to 160 nm. Facing a rear coated neighbor wafer during diffusion seems to improve the uniformity of R&lt;sub&gt;Sh&lt;/sub&gt; on 6-inch large area wafers.</dcterms:abstract>
    <dcterms:issued>2016</dcterms:issued>
    <dc:creator>Terheiden, Barbara</dc:creator>
    <dc:contributor>Hahn, Giso</dc:contributor>
    <dc:language>eng</dc:language>
    <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/36373/3/Steyer_0-374380.pdf"/>
    <dc:rights>terms-of-use</dc:rights>
    <dc:creator>Steyer, Michael</dc:creator>
    <dc:creator>Hahn, Giso</dc:creator>
    <dc:creator>Dastgheib-Shirazi, Amir</dc:creator>
  </rdf:Description>
</rdf:RDF>
Internal note
xmlui.Submission.submit.DescribeStep.inputForms.label.kops_note_fromSubmitter
Contact
URL of original publication
Test date of URL
Examination date of dissertation
Method of financing
Comment on publication
Alliance license
Corresponding Authors der Uni Konstanz vorhanden
International Co-Authors
Bibliography of Konstanz
Yes
Refereed