Influence of rear side coating on emitter formation during POCL3 diffusion process

Lade...
Vorschaubild
Dateien
Zu diesem Dokument gibt es keine Dateien.
Datum
2016
Herausgeber:innen
Kontakt
ISSN der Zeitschrift
Electronic ISSN
ISBN
Bibliografische Daten
Verlag
Schriftenreihe
Auflagebezeichnung
ArXiv-ID
Internationale Patentnummer
Angaben zur Forschungsförderung
Projekt
Open Access-Veröffentlichung
Open Access Green
Sammlungen
Core Facility der Universität Konstanz
Gesperrt bis
Titel in einer weiteren Sprache
Forschungsvorhaben
Organisationseinheiten
Zeitschriftenheft
Publikationstyp
Beitrag zu einem Konferenzband
Publikationsstatus
Published
Erschienen in
Proceedings of 32nd EU PVSEC. München: WIP, 2016, pp. 595-597. eISSN 2196-100X. ISBN 3-936338-41-8. Available under: doi: 10.4229/EUPVSEC20162016-2AV.1.7
Zusammenfassung

The influence of a SiNx coating of a Si wafer on sheet resistance (RSh) of a neighbouring wafer during POCl3 diffusion process is investigated. Wafers facing the SiNx layer of the neighboring wafer in the next slot of the quartz boat show a lower RSh compared to those facing a bare Si wafer, e.g. a reduction from 61 Ω/sq to 52 Ω/sq and a thicker PSG layer are determined. The active doping profile, measured by ECV, shows a deeper plateau region while the tail region is unchanged. Accordingly, the emitter saturation current density rises from 130 fA cm-2 to 193 fA cm-2. We propose that the thicker PSG layer originates from a lower consumption of the reactive gases (POCl3-N2 and O2) at the SiNx coated surface and thus a higher availability of them at the bare Si surface. On the other hand, we also investigate the influence of the thickness of the SiNx rear coating on the emitter at the non-coated Si surface. Already a very thin layer of 20 nm SiNx causes a significant change in RSh and the emitter profile, while there was no difference observed for the SiNx thickness in the range from 20 nm to 160 nm. Facing a rear coated neighbor wafer during diffusion seems to improve the uniformity of RSh on 6-inch large area wafers.

Zusammenfassung in einer weiteren Sprache
Fachgebiet (DDC)
530 Physik
Schlagwörter
POCl3, Diffusion, Emitter, PSG, PERC, Coating, Passivation
Konferenz
32nd European Photovoltaic Solar Energy Conference and Exhibition, 20. Juni 2016 - 24. Juni 2016, Munich
Rezension
undefined / . - undefined, undefined
Zitieren
ISO 690STEYER, Michael, Amir DASTGHEIB-SHIRAZI, Josh ENGELHARDT, Giso HAHN, Barbara TERHEIDEN, 2016. Influence of rear side coating on emitter formation during POCL3 diffusion process. 32nd European Photovoltaic Solar Energy Conference and Exhibition. Munich, 20. Juni 2016 - 24. Juni 2016. In: Proceedings of 32nd EU PVSEC. München: WIP, 2016, pp. 595-597. eISSN 2196-100X. ISBN 3-936338-41-8. Available under: doi: 10.4229/EUPVSEC20162016-2AV.1.7
BibTex
@inproceedings{Steyer2016Influ-36373,
  year={2016},
  doi={10.4229/EUPVSEC20162016-2AV.1.7},
  title={Influence of rear side coating on emitter formation during POCL<sub>3</sub> diffusion process},
  isbn={3-936338-41-8},
  publisher={WIP},
  address={München},
  booktitle={Proceedings of 32nd EU PVSEC},
  pages={595--597},
  author={Steyer, Michael and Dastgheib-Shirazi, Amir and Engelhardt, Josh and Hahn, Giso and Terheiden, Barbara}
}
RDF
<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/36373">
    <dc:creator>Engelhardt, Josh</dc:creator>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:contributor>Terheiden, Barbara</dc:contributor>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2016-12-16T14:17:59Z</dc:date>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:contributor>Dastgheib-Shirazi, Amir</dc:contributor>
    <dcterms:rights rdf:resource="https://rightsstatements.org/page/InC/1.0/"/>
    <dcterms:title>Influence of rear side coating on emitter formation during POCL&lt;sub&gt;3&lt;/sub&gt; diffusion process</dcterms:title>
    <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/36373/3/Steyer_0-374380.pdf"/>
    <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/36373"/>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2016-12-16T14:17:59Z</dcterms:available>
    <dc:contributor>Steyer, Michael</dc:contributor>
    <dc:contributor>Engelhardt, Josh</dc:contributor>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <dcterms:abstract xml:lang="eng">The influence of a SiN&lt;sub&gt;x&lt;/sub&gt; coating of a Si wafer on sheet resistance (R&lt;sub&gt;Sh&lt;/sub&gt;) of a neighbouring wafer during POCl&lt;sub&gt;3&lt;/sub&gt; diffusion process is investigated. Wafers facing the SiN&lt;sub&gt;x&lt;/sub&gt; layer of the neighboring wafer in the next slot of the quartz boat show a lower R&lt;sub&gt;Sh&lt;/sub&gt; compared to those facing a bare Si wafer, e.g. a reduction from 61 Ω/sq to 52 Ω/sq and a thicker PSG layer are determined. The active doping profile, measured by ECV, shows a deeper plateau region while the tail region is unchanged. Accordingly, the emitter saturation current density rises from 130 fA cm&lt;sup&gt;-2&lt;/sup&gt; to 193 fA cm&lt;sup&gt;-2&lt;/sup&gt;. We propose that the thicker PSG layer originates from a lower consumption of the reactive gases (POCl&lt;sub&gt;3&lt;/sub&gt;-N&lt;sub&gt;2&lt;/sub&gt; and O&lt;sub&gt;2&lt;/sub&gt;) at the SiN&lt;sub&gt;x&lt;/sub&gt; coated surface and thus a higher availability of them at the bare Si surface. On the other hand, we also investigate the influence of the thickness of the SiN&lt;sub&gt;x&lt;/sub&gt; rear coating on the emitter at the non-coated Si surface. Already a very thin layer of 20 nm SiNx causes a significant change in R&lt;sub&gt;Sh&lt;/sub&gt; and the emitter profile, while there was no difference observed for the SiN&lt;sub&gt;x&lt;/sub&gt; thickness in the range from 20 nm to 160 nm. Facing a rear coated neighbor wafer during diffusion seems to improve the uniformity of R&lt;sub&gt;Sh&lt;/sub&gt; on 6-inch large area wafers.</dcterms:abstract>
    <dcterms:issued>2016</dcterms:issued>
    <dc:creator>Terheiden, Barbara</dc:creator>
    <dc:contributor>Hahn, Giso</dc:contributor>
    <dc:language>eng</dc:language>
    <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/36373/3/Steyer_0-374380.pdf"/>
    <dc:rights>terms-of-use</dc:rights>
    <dc:creator>Steyer, Michael</dc:creator>
    <dc:creator>Hahn, Giso</dc:creator>
    <dc:creator>Dastgheib-Shirazi, Amir</dc:creator>
  </rdf:Description>
</rdf:RDF>
Interner Vermerk
xmlui.Submission.submit.DescribeStep.inputForms.label.kops_note_fromSubmitter
Kontakt
URL der Originalveröffentl.
Prüfdatum der URL
Prüfungsdatum der Dissertation
Finanzierungsart
Kommentar zur Publikation
Allianzlizenz
Corresponding Authors der Uni Konstanz vorhanden
Internationale Co-Autor:innen
Universitätsbibliographie
Ja
Begutachtet
Diese Publikation teilen