@inproceedings{Steyer2016Influ-36373,
  year={2016},
  doi={10.4229/EUPVSEC20162016-2AV.1.7},
  title={Influence of rear side coating on emitter formation during POCL<sub>3</sub> diffusion process},
  isbn={3-936338-41-8},
  publisher={WIP},
  address={München},
  booktitle={Proceedings of 32nd EU PVSEC},
  pages={595--597},
  author={Steyer, Michael and Dastgheib-Shirazi, Amir and Engelhardt, Josh and Hahn, Giso and Terheiden, Barbara}
}

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    <dc:creator>Engelhardt, Josh</dc:creator>
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    <dc:contributor>Terheiden, Barbara</dc:contributor>
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    <dc:contributor>Dastgheib-Shirazi, Amir</dc:contributor>
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    <dcterms:title>Influence of rear side coating on emitter formation during POCL&lt;sub&gt;3&lt;/sub&gt; diffusion process</dcterms:title>
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    <dc:contributor>Steyer, Michael</dc:contributor>
    <dc:contributor>Engelhardt, Josh</dc:contributor>
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    <dcterms:abstract xml:lang="eng">The influence of a SiN&lt;sub&gt;x&lt;/sub&gt; coating of a Si wafer on sheet resistance (R&lt;sub&gt;Sh&lt;/sub&gt;) of a neighbouring wafer during POCl&lt;sub&gt;3&lt;/sub&gt; diffusion process is investigated. Wafers facing the SiN&lt;sub&gt;x&lt;/sub&gt; layer of the neighboring wafer in the next slot of the quartz boat show a lower R&lt;sub&gt;Sh&lt;/sub&gt; compared to those facing a bare Si wafer, e.g. a reduction from 61 Ω/sq to 52 Ω/sq and a thicker PSG layer are determined. The active doping profile, measured by ECV, shows a deeper plateau region while the tail region is unchanged. Accordingly, the emitter saturation current density rises from 130 fA cm&lt;sup&gt;-2&lt;/sup&gt; to 193 fA cm&lt;sup&gt;-2&lt;/sup&gt;. We propose that the thicker PSG layer originates from a lower consumption of the reactive gases (POCl&lt;sub&gt;3&lt;/sub&gt;-N&lt;sub&gt;2&lt;/sub&gt; and O&lt;sub&gt;2&lt;/sub&gt;) at the SiN&lt;sub&gt;x&lt;/sub&gt; coated surface and thus a higher availability of them at the bare Si surface. On the other hand, we also investigate the influence of the thickness of the SiN&lt;sub&gt;x&lt;/sub&gt; rear coating on the emitter at the non-coated Si surface. Already a very thin layer of 20 nm SiNx causes a significant change in R&lt;sub&gt;Sh&lt;/sub&gt; and the emitter profile, while there was no difference observed for the SiN&lt;sub&gt;x&lt;/sub&gt; thickness in the range from 20 nm to 160 nm. Facing a rear coated neighbor wafer during diffusion seems to improve the uniformity of R&lt;sub&gt;Sh&lt;/sub&gt; on 6-inch large area wafers.</dcterms:abstract>
    <dcterms:issued>2016</dcterms:issued>
    <dc:creator>Terheiden, Barbara</dc:creator>
    <dc:contributor>Hahn, Giso</dc:contributor>
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    <dc:creator>Steyer, Michael</dc:creator>
    <dc:creator>Hahn, Giso</dc:creator>
    <dc:creator>Dastgheib-Shirazi, Amir</dc:creator>
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