Hydrogen Control of Ferromagnetism in a Dilute Magnetic Semiconductor

Kurzanzeige
dc.contributor.authorGoennenwein, Sebastian T. B.
dc.contributor.authorWassner, Thomas A.
dc.contributor.authorHuebl, Hans
dc.contributor.authorBrandt, Martin S.
dc.contributor.authorPhilipp, Jan B.
dc.contributor.authorOpel, Matthias
dc.contributor.authorGross, Rudolf
dc.contributor.authorKoeder, Achim
dc.contributor.authorSchoch, Wladimir
dc.contributor.authorWaag, Andreas
dc.date.accessioned2021-01-26T08:39:54Z
dc.date.available2021-01-26T08:39:54Z
dc.date.issued2004-06-04eng
dc.description.abstractWe show that upon exposure to a remote dc hydrogen plasma, the magnetic and electronic properties of the dilute magnetic semiconductor Ga1-xMnxAs change qualitatively. While the as-grown Ga1-xMnxAs thin films are ferromagnetic at temperatures T less, similar 70 K, the samples are found to be paramagnetic after the hydrogenation, with a Brillouin-type magnetization curve even at T=2 K. Comparing magnetization and electronic transport measurements, we conclude that the density of free holes p is significantly reduced by the plasma process, while the density of Mn magnetic moments does not change.eng
dc.description.versionpublishedeng
dc.identifier.doi10.1103/PhysRevLett.92.227202eng
dc.identifier.pmid15245256eng
dc.identifier.urihttps://kops.uni-konstanz.de/handle/123456789/52558
dc.language.isoengeng
dc.rightsterms-of-use
dc.rights.urihttps://rightsstatements.org/page/InC/1.0/
dc.subject.ddc530eng
dc.titleHydrogen Control of Ferromagnetism in a Dilute Magnetic Semiconductoreng
dc.typeJOURNAL_ARTICLEeng
dspace.entity.typePublication
kops.citation.bibtex
@article{Goennenwein2004-06-04Hydro-52558,
  year={2004},
  doi={10.1103/PhysRevLett.92.227202},
  title={Hydrogen Control of Ferromagnetism in a Dilute Magnetic Semiconductor},
  number={22},
  volume={92},
  issn={0031-9007},
  journal={Physical Review Letters},
  author={Goennenwein, Sebastian T. B. and Wassner, Thomas A. and Huebl, Hans and Brandt, Martin S. and Philipp, Jan B. and Opel, Matthias and Gross, Rudolf and Koeder, Achim and Schoch, Wladimir and Waag, Andreas},
  note={Article Number: 227202}
}
kops.citation.iso690GOENNENWEIN, Sebastian T. B., Thomas A. WASSNER, Hans HUEBL, Martin S. BRANDT, Jan B. PHILIPP, Matthias OPEL, Rudolf GROSS, Achim KOEDER, Wladimir SCHOCH, Andreas WAAG, 2004. Hydrogen Control of Ferromagnetism in a Dilute Magnetic Semiconductor. In: Physical Review Letters. American Physical Society (APS). 2004, 92(22), 227202. ISSN 0031-9007. eISSN 1079-7114. Available under: doi: 10.1103/PhysRevLett.92.227202deu
kops.citation.iso690GOENNENWEIN, Sebastian T. B., Thomas A. WASSNER, Hans HUEBL, Martin S. BRANDT, Jan B. PHILIPP, Matthias OPEL, Rudolf GROSS, Achim KOEDER, Wladimir SCHOCH, Andreas WAAG, 2004. Hydrogen Control of Ferromagnetism in a Dilute Magnetic Semiconductor. In: Physical Review Letters. American Physical Society (APS). 2004, 92(22), 227202. ISSN 0031-9007. eISSN 1079-7114. Available under: doi: 10.1103/PhysRevLett.92.227202eng
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    <dcterms:abstract xml:lang="eng">We show that upon exposure to a remote dc hydrogen plasma, the magnetic and electronic properties of the dilute magnetic semiconductor Ga&lt;sub&gt;1-x&lt;/sub&gt;Mn&lt;sub&gt;x&lt;/sub&gt;As change qualitatively. While the as-grown Ga&lt;sub&gt;1-x&lt;/sub&gt;Mn&lt;sub&gt;x&lt;/sub&gt;As thin films are ferromagnetic at temperatures T less, similar 70 K, the samples are found to be paramagnetic after the hydrogenation, with a Brillouin-type magnetization curve even at T=2 K. Comparing magnetization and electronic transport measurements, we conclude that the density of free holes p is significantly reduced by the plasma process, while the density of Mn magnetic moments does not change.</dcterms:abstract>
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kops.sourcefieldPhysical Review Letters. American Physical Society (APS). 2004, <b>92</b>(22), 227202. ISSN 0031-9007. eISSN 1079-7114. Available under: doi: 10.1103/PhysRevLett.92.227202deu
kops.sourcefield.plainPhysical Review Letters. American Physical Society (APS). 2004, 92(22), 227202. ISSN 0031-9007. eISSN 1079-7114. Available under: doi: 10.1103/PhysRevLett.92.227202deu
kops.sourcefield.plainPhysical Review Letters. American Physical Society (APS). 2004, 92(22), 227202. ISSN 0031-9007. eISSN 1079-7114. Available under: doi: 10.1103/PhysRevLett.92.227202eng
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source.bibliographicInfo.articleNumber227202eng
source.bibliographicInfo.issue22eng
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source.identifier.eissn1079-7114eng
source.identifier.issn0031-9007eng
source.periodicalTitlePhysical Review Letterseng
source.publisherAmerican Physical Society (APS)eng

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