Hydrogen Control of Ferromagnetism in a Dilute Magnetic Semiconductor

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Date
2004
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Wassner, Thomas A.
Huebl, Hans
Brandt, Martin S.
Philipp, Jan B.
Opel, Matthias
Gross, Rudolf
Koeder, Achim
Schoch, Wladimir
Waag, Andreas
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Physical Review Letters ; 92 (2004), 22. - 227202. - American Physical Society (APS). - ISSN 0031-9007. - eISSN 1079-7114
Abstract
We show that upon exposure to a remote dc hydrogen plasma, the magnetic and electronic properties of the dilute magnetic semiconductor Ga1-xMnxAs change qualitatively. While the as-grown Ga1-xMnxAs thin films are ferromagnetic at temperatures T less, similar 70 K, the samples are found to be paramagnetic after the hydrogenation, with a Brillouin-type magnetization curve even at T=2 K. Comparing magnetization and electronic transport measurements, we conclude that the density of free holes p is significantly reduced by the plasma process, while the density of Mn magnetic moments does not change.
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ISO 690GÖNNENWEIN, Sebastian T. B., Thomas A. WASSNER, Hans HUEBL, Martin S. BRANDT, Jan B. PHILIPP, Matthias OPEL, Rudolf GROSS, Achim KOEDER, Wladimir SCHOCH, Andreas WAAG, 2004. Hydrogen Control of Ferromagnetism in a Dilute Magnetic Semiconductor. In: Physical Review Letters. American Physical Society (APS). 92(22), 227202. ISSN 0031-9007. eISSN 1079-7114. Available under: doi: 10.1103/PhysRevLett.92.227202
BibTex
@article{Gonnenwein2004-06-04Hydro-52558,
  year={2004},
  doi={10.1103/PhysRevLett.92.227202},
  title={Hydrogen Control of Ferromagnetism in a Dilute Magnetic Semiconductor},
  number={22},
  volume={92},
  issn={0031-9007},
  journal={Physical Review Letters},
  author={Gönnenwein, Sebastian T. B. and Wassner, Thomas A. and Huebl, Hans and Brandt, Martin S. and Philipp, Jan B. and Opel, Matthias and Gross, Rudolf and Koeder, Achim and Schoch, Wladimir and Waag, Andreas},
  note={Article Number: 227202}
}
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