Does LeTID occur in c-Si even without a firing step?

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dc.contributor.authorSperber, David
dc.contributor.authorFurtwängler, Florian
dc.contributor.authorHerguth, Axel
dc.contributor.authorHahn, Giso
dc.date.accessioned2019-09-12T11:47:39Z
dc.date.available2019-09-12T11:47:39Z
dc.date.issued2019eng
dc.description.abstractIt is shown that a non-fired B-doped floatzone silicon sample coated with SiNx:H may show severe bulk related degradation and regeneration during illuminated treatment at elevated temperature. It is discussed that the likely cause is light and elevated temperature induced degradation (LeTID) in the silicon bulk. Firing is found to modulate the extent of LeTID so that degradation may either be weaker or stronger compared to the non-fired sample depending on firing parameters. A sample which was annealed instead of fired is found to be stable for up to 1,000 h of treatment time.eng
dc.description.versionpublishedde
dc.identifier.doi10.1063/1.5123898eng
dc.identifier.ppn1676807799
dc.identifier.urihttps://kops.uni-konstanz.de/handle/123456789/46844
dc.language.isoengeng
dc.rightsterms-of-use
dc.rights.urihttps://rightsstatements.org/page/InC/1.0/
dc.subject.ddc530eng
dc.titleDoes LeTID occur in c-Si even without a firing step?eng
dc.typeINPROCEEDINGSde
dspace.entity.typePublication
kops.citation.bibtex
@inproceedings{Sperber2019LeTID-46844,
  year={2019},
  doi={10.1063/1.5123898},
  title={Does LeTID occur in c-Si even without a firing step?},
  number={2147,1},
  isbn={978-0-7354-1892-9},
  publisher={AIP Publishing},
  address={Melville, New York},
  series={AIP Conference Proceedings},
  booktitle={SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics : 8-10 April 2019, Leuven, Belgium},
  editor={Poortmans, Jef},
  author={Sperber, David and Furtwängler, Florian and Herguth, Axel and Hahn, Giso},
  note={Article Number: 140011}
}
kops.citation.iso690SPERBER, David, Florian FURTWÄNGLER, Axel HERGUTH, Giso HAHN, 2019. Does LeTID occur in c-Si even without a firing step?. SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics. Leuven, Belgium, 8. Apr. 2019 - 10. Apr. 2019. In: POORTMANS, Jef, ed. and others. SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics : 8-10 April 2019, Leuven, Belgium. Melville, New York: AIP Publishing, 2019, 140011. AIP Conference Proceedings. 2147,1. eISSN 0094-243X. ISBN 978-0-7354-1892-9. Available under: doi: 10.1063/1.5123898deu
kops.citation.iso690SPERBER, David, Florian FURTWÄNGLER, Axel HERGUTH, Giso HAHN, 2019. Does LeTID occur in c-Si even without a firing step?. SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics. Leuven, Belgium, Apr 8, 2019 - Apr 10, 2019. In: POORTMANS, Jef, ed. and others. SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics : 8-10 April 2019, Leuven, Belgium. Melville, New York: AIP Publishing, 2019, 140011. AIP Conference Proceedings. 2147,1. eISSN 0094-243X. ISBN 978-0-7354-1892-9. Available under: doi: 10.1063/1.5123898eng
kops.citation.rdf
<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/46844">
    <dc:creator>Furtwängler, Florian</dc:creator>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dcterms:title>Does LeTID occur in c-Si even without a firing step?</dcterms:title>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <dc:contributor>Herguth, Axel</dc:contributor>
    <dc:creator>Hahn, Giso</dc:creator>
    <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/46844"/>
    <dcterms:issued>2019</dcterms:issued>
    <dc:rights>terms-of-use</dc:rights>
    <dc:contributor>Sperber, David</dc:contributor>
    <dc:creator>Sperber, David</dc:creator>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dcterms:abstract xml:lang="eng">It is shown that a non-fired B-doped floatzone silicon sample coated with SiNx:H may show severe bulk related degradation and regeneration during illuminated treatment at elevated temperature. It is discussed that the likely cause is light and elevated temperature induced degradation (LeTID) in the silicon bulk. Firing is found to modulate the extent of LeTID so that degradation may either be weaker or stronger compared to the non-fired sample depending on firing parameters. A sample which was annealed instead of fired is found to be stable for up to 1,000 h of treatment time.</dcterms:abstract>
    <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/46844/1/Sperber_2-5a5wfsnygcwn9.pdf"/>
    <dcterms:rights rdf:resource="https://rightsstatements.org/page/InC/1.0/"/>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2019-09-12T11:47:39Z</dcterms:available>
    <dc:language>eng</dc:language>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2019-09-12T11:47:39Z</dc:date>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:contributor>Furtwängler, Florian</dc:contributor>
    <dc:contributor>Hahn, Giso</dc:contributor>
    <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/46844/1/Sperber_2-5a5wfsnygcwn9.pdf"/>
    <dc:creator>Herguth, Axel</dc:creator>
  </rdf:Description>
</rdf:RDF>
kops.conferencefieldSiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics, 8. Apr. 2019 - 10. Apr. 2019, Leuven, Belgiumdeu
kops.date.conferenceEnd2019-04-10eng
kops.date.conferenceStart2019-04-08eng
kops.description.openAccessopenaccessgreen
kops.flag.knbibliographytrue
kops.identifier.nbnurn:nbn:de:bsz:352-2-5a5wfsnygcwn9
kops.location.conferenceLeuven, Belgiumeng
kops.sourcefieldPOORTMANS, Jef, ed. and others. <i>SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics : 8-10 April 2019, Leuven, Belgium</i>. Melville, New York: AIP Publishing, 2019, 140011. AIP Conference Proceedings. 2147,1. eISSN 0094-243X. ISBN 978-0-7354-1892-9. Available under: doi: 10.1063/1.5123898deu
kops.sourcefield.plainPOORTMANS, Jef, ed. and others. SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics : 8-10 April 2019, Leuven, Belgium. Melville, New York: AIP Publishing, 2019, 140011. AIP Conference Proceedings. 2147,1. eISSN 0094-243X. ISBN 978-0-7354-1892-9. Available under: doi: 10.1063/1.5123898deu
kops.sourcefield.plainPOORTMANS, Jef, ed. and others. SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics : 8-10 April 2019, Leuven, Belgium. Melville, New York: AIP Publishing, 2019, 140011. AIP Conference Proceedings. 2147,1. eISSN 0094-243X. ISBN 978-0-7354-1892-9. Available under: doi: 10.1063/1.5123898eng
kops.title.conferenceSiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaicseng
relation.isAuthorOfPublication3e119409-b9f1-4f4c-bf73-8dde0c2dbf93
relation.isAuthorOfPublication21235bec-74bd-4c2a-9bf0-59486b0d0be3
relation.isAuthorOfPublication1ab265ef-6078-4a9d-a66b-bcaaf18e5b4e
relation.isAuthorOfPublicatione82405a2-e86b-44d7-8126-8cfdd7e627c9
relation.isAuthorOfPublication.latestForDiscovery3e119409-b9f1-4f4c-bf73-8dde0c2dbf93
source.bibliographicInfo.articleNumber140011eng
source.bibliographicInfo.seriesNumber2147,1eng
source.contributor.editorPoortmans, Jef
source.flag.etalEditortrueeng
source.identifier.eissn0094-243Xeng
source.identifier.isbn978-0-7354-1892-9eng
source.publisherAIP Publishingeng
source.publisher.locationMelville, New Yorkeng
source.relation.ispartofseriesAIP Conference Proceedingseng
source.titleSiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics : 8-10 April 2019, Leuven, Belgiumeng

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