Publikation:

Does LeTID occur in c-Si even without a firing step?

Lade...
Vorschaubild

Dateien

Sperber_2-5a5wfsnygcwn9.pdf
Sperber_2-5a5wfsnygcwn9.pdfGröße: 1.12 MBDownloads: 164

Datum

2019

Herausgeber:innen

Kontakt

ISSN der Zeitschrift

Electronic ISSN

ISBN

Bibliografische Daten

Verlag

Schriftenreihe

Auflagebezeichnung

DOI (zitierfähiger Link)
ArXiv-ID

Internationale Patentnummer

Angaben zur Forschungsförderung

Projekt

Open Access-Veröffentlichung
Open Access Green
Core Facility der Universität Konstanz

Gesperrt bis

Titel in einer weiteren Sprache

Publikationstyp
Beitrag zu einem Konferenzband
Publikationsstatus
Published

Erschienen in

POORTMANS, Jef, ed. and others. SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics : 8-10 April 2019, Leuven, Belgium. Melville, New York: AIP Publishing, 2019, 140011. AIP Conference Proceedings. 2147,1. eISSN 0094-243X. ISBN 978-0-7354-1892-9. Available under: doi: 10.1063/1.5123898

Zusammenfassung

It is shown that a non-fired B-doped floatzone silicon sample coated with SiNx:H may show severe bulk related degradation and regeneration during illuminated treatment at elevated temperature. It is discussed that the likely cause is light and elevated temperature induced degradation (LeTID) in the silicon bulk. Firing is found to modulate the extent of LeTID so that degradation may either be weaker or stronger compared to the non-fired sample depending on firing parameters. A sample which was annealed instead of fired is found to be stable for up to 1,000 h of treatment time.

Zusammenfassung in einer weiteren Sprache

Fachgebiet (DDC)
530 Physik

Schlagwörter

Konferenz

SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics, 8. Apr. 2019 - 10. Apr. 2019, Leuven, Belgium
Rezension
undefined / . - undefined, undefined

Forschungsvorhaben

Organisationseinheiten

Zeitschriftenheft

Zugehörige Datensätze in KOPS

Zitieren

ISO 690SPERBER, David, Florian FURTWÄNGLER, Axel HERGUTH, Giso HAHN, 2019. Does LeTID occur in c-Si even without a firing step?. SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics. Leuven, Belgium, 8. Apr. 2019 - 10. Apr. 2019. In: POORTMANS, Jef, ed. and others. SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics : 8-10 April 2019, Leuven, Belgium. Melville, New York: AIP Publishing, 2019, 140011. AIP Conference Proceedings. 2147,1. eISSN 0094-243X. ISBN 978-0-7354-1892-9. Available under: doi: 10.1063/1.5123898
BibTex
@inproceedings{Sperber2019LeTID-46844,
  year={2019},
  doi={10.1063/1.5123898},
  title={Does LeTID occur in c-Si even without a firing step?},
  number={2147,1},
  isbn={978-0-7354-1892-9},
  publisher={AIP Publishing},
  address={Melville, New York},
  series={AIP Conference Proceedings},
  booktitle={SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics : 8-10 April 2019, Leuven, Belgium},
  editor={Poortmans, Jef},
  author={Sperber, David and Furtwängler, Florian and Herguth, Axel and Hahn, Giso},
  note={Article Number: 140011}
}
RDF
<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/46844">
    <dc:creator>Furtwängler, Florian</dc:creator>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dcterms:title>Does LeTID occur in c-Si even without a firing step?</dcterms:title>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <dc:contributor>Herguth, Axel</dc:contributor>
    <dc:creator>Hahn, Giso</dc:creator>
    <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/46844"/>
    <dcterms:issued>2019</dcterms:issued>
    <dc:rights>terms-of-use</dc:rights>
    <dc:contributor>Sperber, David</dc:contributor>
    <dc:creator>Sperber, David</dc:creator>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dcterms:abstract xml:lang="eng">It is shown that a non-fired B-doped floatzone silicon sample coated with SiNx:H may show severe bulk related degradation and regeneration during illuminated treatment at elevated temperature. It is discussed that the likely cause is light and elevated temperature induced degradation (LeTID) in the silicon bulk. Firing is found to modulate the extent of LeTID so that degradation may either be weaker or stronger compared to the non-fired sample depending on firing parameters. A sample which was annealed instead of fired is found to be stable for up to 1,000 h of treatment time.</dcterms:abstract>
    <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/46844/1/Sperber_2-5a5wfsnygcwn9.pdf"/>
    <dcterms:rights rdf:resource="https://rightsstatements.org/page/InC/1.0/"/>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2019-09-12T11:47:39Z</dcterms:available>
    <dc:language>eng</dc:language>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2019-09-12T11:47:39Z</dc:date>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:contributor>Furtwängler, Florian</dc:contributor>
    <dc:contributor>Hahn, Giso</dc:contributor>
    <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/46844/1/Sperber_2-5a5wfsnygcwn9.pdf"/>
    <dc:creator>Herguth, Axel</dc:creator>
  </rdf:Description>
</rdf:RDF>

Interner Vermerk

xmlui.Submission.submit.DescribeStep.inputForms.label.kops_note_fromSubmitter

Kontakt
URL der Originalveröffentl.

Prüfdatum der URL

Prüfungsdatum der Dissertation

Finanzierungsart

Kommentar zur Publikation

Allianzlizenz
Corresponding Authors der Uni Konstanz vorhanden
Internationale Co-Autor:innen
Universitätsbibliographie
Ja
Begutachtet
Diese Publikation teilen