Microscopic Identification of the Origin of Generation-Recombination Noise in Hydrogenated Amorphous Silicon with Noise-Detected Magnetic Resonance

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dc.contributor.authorGoennenwein, Sebastian T. B.
dc.contributor.authorBayerl, Martin W.
dc.contributor.authorBrandt, Martin S.
dc.contributor.authorStutzmann, Martin
dc.date.accessioned2021-02-01T10:50:08Z
dc.date.available2021-02-01T10:50:08Z
dc.date.issued2000-05-29eng
dc.description.abstractSpin-dependent changes in the noise power of undoped amorphous hydrogenated silicon ( a-Si:H) are observed under electron spin resonance conditions. The noise-detected magnetic resonance (NDMR) signal has the g value of holes in the valence band tail of a-Si:H. Both the sign of the NDMR signal and the frequency dependence of its intensity can be quantitatively accounted for by a resonant reduction of the generation-recombination noise time constant τ. This identifies hopping in the valence-band tail as the dominant spin-dependent step governing noise in this materialeng
dc.description.versionpublishedeng
dc.identifier.doi10.1103/PhysRevLett.84.5188eng
dc.identifier.pmid10990899eng
dc.identifier.urihttps://kops.uni-konstanz.de/handle/123456789/52652
dc.language.isoengeng
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dc.subject.ddc530eng
dc.titleMicroscopic Identification of the Origin of Generation-Recombination Noise in Hydrogenated Amorphous Silicon with Noise-Detected Magnetic Resonanceeng
dc.typeJOURNAL_ARTICLEeng
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@article{Goennenwein2000-05-29Micro-52652,
  year={2000},
  doi={10.1103/PhysRevLett.84.5188},
  title={Microscopic Identification of the Origin of Generation-Recombination Noise in Hydrogenated Amorphous Silicon with Noise-Detected Magnetic Resonance},
  number={22},
  volume={84},
  issn={0031-9007},
  journal={Physical Review Letters},
  pages={5188--5191},
  author={Goennenwein, Sebastian T. B. and Bayerl, Martin W. and Brandt, Martin S. and Stutzmann, Martin}
}
kops.citation.iso690GOENNENWEIN, Sebastian T. B., Martin W. BAYERL, Martin S. BRANDT, Martin STUTZMANN, 2000. Microscopic Identification of the Origin of Generation-Recombination Noise in Hydrogenated Amorphous Silicon with Noise-Detected Magnetic Resonance. In: Physical Review Letters. American Physical Society (APS). 2000, 84(22), pp. 5188-5191. ISSN 0031-9007. eISSN 1079-7114. Available under: doi: 10.1103/PhysRevLett.84.5188deu
kops.citation.iso690GOENNENWEIN, Sebastian T. B., Martin W. BAYERL, Martin S. BRANDT, Martin STUTZMANN, 2000. Microscopic Identification of the Origin of Generation-Recombination Noise in Hydrogenated Amorphous Silicon with Noise-Detected Magnetic Resonance. In: Physical Review Letters. American Physical Society (APS). 2000, 84(22), pp. 5188-5191. ISSN 0031-9007. eISSN 1079-7114. Available under: doi: 10.1103/PhysRevLett.84.5188eng
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kops.sourcefieldPhysical Review Letters. American Physical Society (APS). 2000, <b>84</b>(22), pp. 5188-5191. ISSN 0031-9007. eISSN 1079-7114. Available under: doi: 10.1103/PhysRevLett.84.5188deu
kops.sourcefield.plainPhysical Review Letters. American Physical Society (APS). 2000, 84(22), pp. 5188-5191. ISSN 0031-9007. eISSN 1079-7114. Available under: doi: 10.1103/PhysRevLett.84.5188deu
kops.sourcefield.plainPhysical Review Letters. American Physical Society (APS). 2000, 84(22), pp. 5188-5191. ISSN 0031-9007. eISSN 1079-7114. Available under: doi: 10.1103/PhysRevLett.84.5188eng
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