Microscopic Identification of the Origin of Generation-Recombination Noise in Hydrogenated Amorphous Silicon with Noise-Detected Magnetic Resonance

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2000
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Bayerl, Martin W.
Brandt, Martin S.
Stutzmann, Martin
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Physical Review Letters. American Physical Society (APS). 2000, 84(22), pp. 5188-5191. ISSN 0031-9007. eISSN 1079-7114. Available under: doi: 10.1103/PhysRevLett.84.5188
Zusammenfassung

Spin-dependent changes in the noise power of undoped amorphous hydrogenated silicon ( a-Si:H) are observed under electron spin resonance conditions. The noise-detected magnetic resonance (NDMR) signal has the g value of holes in the valence band tail of a-Si:H. Both the sign of the NDMR signal and the frequency dependence of its intensity can be quantitatively accounted for by a resonant reduction of the generation-recombination noise time constant τ. This identifies hopping in the valence-band tail as the dominant spin-dependent step governing noise in this material

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ISO 690GOENNENWEIN, Sebastian T. B., Martin W. BAYERL, Martin S. BRANDT, Martin STUTZMANN, 2000. Microscopic Identification of the Origin of Generation-Recombination Noise in Hydrogenated Amorphous Silicon with Noise-Detected Magnetic Resonance. In: Physical Review Letters. American Physical Society (APS). 2000, 84(22), pp. 5188-5191. ISSN 0031-9007. eISSN 1079-7114. Available under: doi: 10.1103/PhysRevLett.84.5188
BibTex
@article{Goennenwein2000-05-29Micro-52652,
  year={2000},
  doi={10.1103/PhysRevLett.84.5188},
  title={Microscopic Identification of the Origin of Generation-Recombination Noise in Hydrogenated Amorphous Silicon with Noise-Detected Magnetic Resonance},
  number={22},
  volume={84},
  issn={0031-9007},
  journal={Physical Review Letters},
  pages={5188--5191},
  author={Goennenwein, Sebastian T. B. and Bayerl, Martin W. and Brandt, Martin S. and Stutzmann, Martin}
}
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    <dcterms:abstract xml:lang="eng">Spin-dependent changes in the noise power of undoped amorphous hydrogenated silicon ( a-Si:H) are observed under electron spin resonance conditions. The noise-detected magnetic resonance (NDMR) signal has the g value of holes in the valence band tail of a-Si:H. Both the sign of the NDMR signal and the frequency dependence of its intensity can be quantitatively accounted for by a resonant reduction of the generation-recombination noise time constant τ. This identifies hopping in the valence-band tail as the dominant spin-dependent step governing noise in this material</dcterms:abstract>
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