Publikation: Microscopic Identification of the Origin of Generation-Recombination Noise in Hydrogenated Amorphous Silicon with Noise-Detected Magnetic Resonance
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2000
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Physical Review Letters. American Physical Society (APS). 2000, 84(22), pp. 5188-5191. ISSN 0031-9007. eISSN 1079-7114. Available under: doi: 10.1103/PhysRevLett.84.5188
Zusammenfassung
Spin-dependent changes in the noise power of undoped amorphous hydrogenated silicon ( a-Si:H) are observed under electron spin resonance conditions. The noise-detected magnetic resonance (NDMR) signal has the g value of holes in the valence band tail of a-Si:H. Both the sign of the NDMR signal and the frequency dependence of its intensity can be quantitatively accounted for by a resonant reduction of the generation-recombination noise time constant τ. This identifies hopping in the valence-band tail as the dominant spin-dependent step governing noise in this material
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GOENNENWEIN, Sebastian T. B., Martin W. BAYERL, Martin S. BRANDT, Martin STUTZMANN, 2000. Microscopic Identification of the Origin of Generation-Recombination Noise in Hydrogenated Amorphous Silicon with Noise-Detected Magnetic Resonance. In: Physical Review Letters. American Physical Society (APS). 2000, 84(22), pp. 5188-5191. ISSN 0031-9007. eISSN 1079-7114. Available under: doi: 10.1103/PhysRevLett.84.5188BibTex
@article{Goennenwein2000-05-29Micro-52652, year={2000}, doi={10.1103/PhysRevLett.84.5188}, title={Microscopic Identification of the Origin of Generation-Recombination Noise in Hydrogenated Amorphous Silicon with Noise-Detected Magnetic Resonance}, number={22}, volume={84}, issn={0031-9007}, journal={Physical Review Letters}, pages={5188--5191}, author={Goennenwein, Sebastian T. B. and Bayerl, Martin W. and Brandt, Martin S. and Stutzmann, Martin} }
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