Publikation:

Microscopic Identification of the Origin of Generation-Recombination Noise in Hydrogenated Amorphous Silicon with Noise-Detected Magnetic Resonance

Vorschaubild

Dateien

Zu diesem Dokument gibt es keine Dateien.

Datum

2000

Autor:innen

Bayerl, Martin W.
Brandt, Martin S.
Stutzmann, Martin

Herausgeber:innen

Kontakt

ISSN der Zeitschrift

Electronic ISSN

ISBN

Bibliografische Daten

Verlag

Schriftenreihe

Auflagebezeichnung

URI (zitierfähiger Link)
DOI (zitierfähiger Link)
https://doi.org/10.1103/PhysRevLett.84.5188
ArXiv-ID

Internationale Patentnummer

Angaben zur Forschungsförderung

Projekt

Open Access-Veröffentlichung

Sammlungen

Physik: Publikationen
Core Facility der Universität Konstanz

Gesperrt bis

Titel in einer weiteren Sprache

Publikationstyp
Zeitschriftenartikel
Publikationsstatus
Published

Erschienen in

Physical Review Letters. American Physical Society (APS). 2000, 84(22), pp. 5188-5191. ISSN 0031-9007. eISSN 1079-7114. Available under: doi: 10.1103/PhysRevLett.84.5188

Zusammenfassung

Spin-dependent changes in the noise power of undoped amorphous hydrogenated silicon ( a-Si:H) are observed under electron spin resonance conditions. The noise-detected magnetic resonance (NDMR) signal has the g value of holes in the valence band tail of a-Si:H. Both the sign of the NDMR signal and the frequency dependence of its intensity can be quantitatively accounted for by a resonant reduction of the generation-recombination noise time constant τ. This identifies hopping in the valence-band tail as the dominant spin-dependent step governing noise in this material

Zusammenfassung in einer weiteren Sprache

Fachgebiet (DDC)
530 Physik

Schlagwörter

Konferenz

Rezension
undefined / . - undefined, undefined

Forschungsvorhaben

Organisationseinheiten

Zeitschriftenheft

Zugehörige Datensätze in KOPS

Zitieren

ISO 690GOENNENWEIN, Sebastian T. B., Martin W. BAYERL, Martin S. BRANDT, Martin STUTZMANN, 2000. Microscopic Identification of the Origin of Generation-Recombination Noise in Hydrogenated Amorphous Silicon with Noise-Detected Magnetic Resonance. In: Physical Review Letters. American Physical Society (APS). 2000, 84(22), pp. 5188-5191. ISSN 0031-9007. eISSN 1079-7114. Available under: doi: 10.1103/PhysRevLett.84.5188
BibTex
@article{Goennenwein2000-05-29Micro-52652,
  year={2000},
  doi={10.1103/PhysRevLett.84.5188},
  title={Microscopic Identification of the Origin of Generation-Recombination Noise in Hydrogenated Amorphous Silicon with Noise-Detected Magnetic Resonance},
  number={22},
  volume={84},
  issn={0031-9007},
  journal={Physical Review Letters},
  pages={5188--5191},
  author={Goennenwein, Sebastian T. B. and Bayerl, Martin W. and Brandt, Martin S. and Stutzmann, Martin}
}
RDF
<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/52652">
    <dc:rights>terms-of-use</dc:rights>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/52652"/>
    <dc:creator>Brandt, Martin S.</dc:creator>
    <dc:creator>Stutzmann, Martin</dc:creator>
    <dc:contributor>Brandt, Martin S.</dc:contributor>
    <dc:contributor>Bayerl, Martin W.</dc:contributor>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:contributor>Goennenwein, Sebastian T. B.</dc:contributor>
    <dc:creator>Goennenwein, Sebastian T. B.</dc:creator>
    <dcterms:abstract xml:lang="eng">Spin-dependent changes in the noise power of undoped amorphous hydrogenated silicon ( a-Si:H) are observed under electron spin resonance conditions. The noise-detected magnetic resonance (NDMR) signal has the g value of holes in the valence band tail of a-Si:H. Both the sign of the NDMR signal and the frequency dependence of its intensity can be quantitatively accounted for by a resonant reduction of the generation-recombination noise time constant τ. This identifies hopping in the valence-band tail as the dominant spin-dependent step governing noise in this material</dcterms:abstract>
    <dcterms:issued>2000-05-29</dcterms:issued>
    <dc:creator>Bayerl, Martin W.</dc:creator>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2021-02-01T10:50:08Z</dc:date>
    <dcterms:rights rdf:resource="https://rightsstatements.org/page/InC/1.0/"/>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2021-02-01T10:50:08Z</dcterms:available>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:contributor>Stutzmann, Martin</dc:contributor>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <dc:language>eng</dc:language>
    <dcterms:title>Microscopic Identification of the Origin of Generation-Recombination Noise in Hydrogenated Amorphous Silicon with Noise-Detected Magnetic Resonance</dcterms:title>
  </rdf:Description>
</rdf:RDF>

Interner Vermerk

xmlui.Submission.submit.DescribeStep.inputForms.label.kops_note_fromSubmitter

Kontakt
URL der Originalveröffentl.

Prüfdatum der URL

Prüfungsdatum der Dissertation

Finanzierungsart

Kommentar zur Publikation

Allianzlizenz
Corresponding Authors der Uni Konstanz vorhanden
Internationale Co-Autor:innen
Universitätsbibliographie
Nein
Begutachtet
Ja
Diese Publikation teilen