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Influence of highly doped layers on hydrogen in-diffusion into crystalline silicon

Influence of highly doped layers on hydrogen in-diffusion into crystalline silicon

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FISCHER, Christian, Andreas SCHMID, Axel HERGUTH, Annika ZUSCHLAG, Pietro P. ALTERMATT, Phillip HAMER, Giso HAHN, 2023. Influence of highly doped layers on hydrogen in-diffusion into crystalline silicon. In: Solar Energy Materials and Solar Cells. Elsevier. 250, 112056. ISSN 0927-0248. eISSN 1879-3398. Available under: doi: 10.1016/j.solmat.2022.112056

@article{Fischer2023Influ-59045, title={Influence of highly doped layers on hydrogen in-diffusion into crystalline silicon}, year={2023}, doi={10.1016/j.solmat.2022.112056}, volume={250}, issn={0927-0248}, journal={Solar Energy Materials and Solar Cells}, author={Fischer, Christian and Schmid, Andreas and Herguth, Axel and Zuschlag, Annika and Altermatt, Pietro P. and Hamer, Phillip and Hahn, Giso}, note={Article Number: 112056} }

<rdf:RDF xmlns:dcterms="http://purl.org/dc/terms/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#" xmlns:foaf="http://xmlns.com/foaf/0.1/" xmlns:void="http://rdfs.org/ns/void#" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/59045"> <dc:contributor>Herguth, Axel</dc:contributor> <dc:contributor>Schmid, Andreas</dc:contributor> <dc:creator>Herguth, Axel</dc:creator> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> <foaf:homepage rdf:resource="http://localhost:8080/jspui"/> <dc:contributor>Hahn, Giso</dc:contributor> <dcterms:issued>2023</dcterms:issued> <dc:creator>Hahn, Giso</dc:creator> <dc:rights>terms-of-use</dc:rights> <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/59045"/> <dc:contributor>Altermatt, Pietro P.</dc:contributor> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2022-11-07T07:03:10Z</dc:date> <dc:creator>Fischer, Christian</dc:creator> <dc:language>eng</dc:language> <dc:contributor>Hamer, Phillip</dc:contributor> <dc:contributor>Fischer, Christian</dc:contributor> <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <dc:creator>Zuschlag, Annika</dc:creator> <dc:creator>Altermatt, Pietro P.</dc:creator> <dc:creator>Hamer, Phillip</dc:creator> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2022-11-07T07:03:10Z</dcterms:available> <dcterms:abstract xml:lang="eng">In this work, the influence of highly doped layers on the hydrogen in-diffusion into silicon from hydrogen-rich silicon nitride is investigated. Hydrogen in the crystalline silicon bulk of wafers with and without highly doped layers present was examined in solar cell-like structures by resistivity measurements for quantification of BH-pair dynamics. Hydrogen diffusion through phosphorus- and boron-doped Float-Zone samples without highly doped layers and with p+- respectively n+-layers was determined via secondary ion mass spectrometry. Therefore, deuterium concentration in an amorphous silicon layer on the backside was measured. This experiment shows an up to threefold increase of deuterium concentration in the amorphous layer for samples with highly doped layers present. A possible explanation of this observation is given by simulations.</dcterms:abstract> <dc:contributor>Zuschlag, Annika</dc:contributor> <dc:creator>Schmid, Andreas</dc:creator> <dcterms:rights rdf:resource="https://rightsstatements.org/page/InC/1.0/"/> <dcterms:title>Influence of highly doped layers on hydrogen in-diffusion into crystalline silicon</dcterms:title> </rdf:Description> </rdf:RDF>

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